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Last $3.20 USD
Change Today 0.00 / 0.00%
Volume 0.0
RNECY On Other Exchanges
Symbol
Exchange
RNECY is not on other exchanges.
As of 8:10 PM 07/28/15 All times are local (Market data is delayed by at least 15 minutes).

renesas electro-unspon adr (RNECY) Snapshot

Open
$3.20
Previous Close
$3.20
Day High
$3.20
Day Low
$3.20
52 Week High
09/3/14 - $5.07
52 Week Low
07/20/15 - $3.18
Market Cap
10.7B
Average Volume 10 Days
143.3
EPS TTM
--
Shares Outstanding
3.3B
EX-Date
03/26/15
P/E TM
--
Dividend
--
Dividend Yield
--
Current Stock Chart for RENESAS ELECTRO-UNSPON ADR (RNECY)

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renesas electro-unspon adr (RNECY) Details

Renesas Electronics Corporation engages in the research, development, design, manufacture, sale, and servicing of semiconductor products worldwide. It offers microcontrollers and microprocessors; power devices, such as power MOSFETs, IGBTs, intelligent power devices, thyristors and triacs, transistors, and diodes; and analog and mixed signal products, including ICs power management, driver ICs, and analog ICs for automotive applications, as well as ICs for leakage detection, audio, computing and peripherals, ICs for cameras, ICs for graphic controllers, and interfaces. The company also provides general-purpose linear and logic analog ICs; RF devices; optoelectronics comprising photo couplers, solid state relays, fiberoptic devices, and Blue-Violet lasers; LSIs for automotive and factory automation; memory products comprising SRAM, EEPROM, low latency DRAM, and TCAM; and ASIC products consisting of gate arrays, cell-based ICs, analog masters, mixed signal ASICs, customizable MCUs, and programmable XBridge. In addition, it offers USB power delivery controllers; LSI for communications and mobile devices; and Renesas synergy platform. The company was founded in 2002 and is headquartered in Tokyo, Japan.

21,083 Employees
Last Reported Date: 06/24/15
Founded in 2002

renesas electro-unspon adr (RNECY) Top Compensated Officers

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renesas electro-unspon adr (RNECY) Key Developments

Renesas Electronics Corporation Announces the Release of Two New Series of Advanced Low Power SRAM

Renesas Electronics Corporation announced the release of two new series of Advanced Low Power SRAM (Advanced LP SRAM), the low-power-consumption SRAM, designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment, and the smart grid. Fabricated using the 110-nanometer (nm) process, the new RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32 Mb devices feature an innovative memory cell technology that dramatically improves reliability and contributes to longer battery operation. Renesas’ Advanced LP SRAM devices feature exclusive technology in their memory cells that achieves soft error resistance over 500 times that of conventional Full CMOS memory cells. This makes it desirable for use in fields requiring high reliability, including FA, measurement devices, smart grid-related devices, and industrial equipment, in addition to many other fields, such as consumer devices, office equipment, and communication devices. In the Renesas Advanced LP SRAM structure, a stacked capacitor is added to each memory node within the memory cells. This configuration suppresses the generation of soft errors to a level that is effectively soft error free. In addition, the load transistor (P-channel) of each SRAM cell is a polysilicon thin-film transistor (TFT) that is stacked on top of the N-channel MOS transistor formed on the silicon. Only the N-channel MOS transistor is formed on the silicon substrate below. This means that no parasitic thyristors are formed in the memory area and theoretically makes latch-up impossible. Therefore, the Advanced LP SRAM is well suited to applications requiring high reliability, such as FA, measurement devices, smart grid related devices, traffic systems, and industrial equipment. The standby current of the new RMLV1616A Series and RMWV3216A Series is only 0.5 microamperes (µA) (typical) for 16 Mb devices and 1 µA (typical) for 32 Mb devices. These low current consumption levels are less than half the levels of comparable earlier Renesas SRAM products, making it possible to extend the service life of backup batteries. The minimum power supply voltage when retaining data is 1.5 V, lower than the 2.0 V of comparable earlier Renesas products. This helps customers designing systems that retain data using battery power. The 16 Mb RMLV1616A Series is available in three packages: 48-ball FBGA, 48-pin TSOP (I), and 52-pin µTSOP (II), allowing customers to select the package that best matches their application. The 32 Mb RMWV3216A Series is available in a 48-ball FBGA package. Samples of the RMLV1616A Series and RMWV3216A Series will be available in September. Pricing varies depending on capacity. For example, the 16 Mb RMLV1616A Series is priced at $16.50 per unit, and the 32 Mb RMWV3216A Series at $31 per unit. Mass production of the two series is scheduled to begin in October 2015. Mass production using the 110 nm process has already begun for Advanced LP SRAM products with 4 Mbit and 8 Mbit capacities.

Renesas Electronics America Inc. Unveils New Intelligent Wireless Solution

Renesas Electronics America Inc. a manufacturer of semiconductor solutions, has unveiled the RL78/G1D group of microcontrollers, or MCUs, a new intelligent wireless solution that supports the Bluetooth Smart 4.1 specification. The highly integrated RL78/G1D MCUs combine low-power Bluetooth transceiver technology with Renesas' ultra-low power RL78 MCUs to deliver a powerful, energy-efficient wireless solution for a range of connected medical, consumer, and industrial applications. Renesas designed the Bluetooth Smart-compliant RL78/G1D MCUs to address key customer needs around wireless design complexity, energy efficiency, time to market, and budget constraints. The RL71/G1D MCUs feature a combination of technologies to help extend battery life for connected devices. The on-chip RF transceiver enables wireless operation at among the lowest power consumption levels in the industry-3.5 milliamperes (mA) during reception and 4.3 mA during transmission at 0 dBm delivering substantially reduced power consumption that is essential for battery operated wireless devices. Adaptable RF technology enables adjustments to the power consumption during wireless operation to an optimal level, prioritizing current consumption or communication range depending on the distance. This flexibility dramatically lowers the power consumption during near distance wireless communication which, combined with the on-chip integration of most elements required for the antenna connection, contributes to reduced external component costs. With the new devices, Renesas has simplified the antenna connection circuit design by integrating the balun elements a key element for matching RF path on chip. This allows designers to connect RF transceiver signal terminal directly to the external antenna terminal, eliminating the need for discrete balun elements, and reducing development, product, component, and production costs. Both PCB based and chip antenna types are supported, with connection being single-ended. With the RL78/G1D MCUs, Renesas provides several tools that enable customers to easily develop Bluetooth Smart applications and reduce the time required for development while making effective use of development environment and software resources. The firmware over the air (FOTA) feature makes it convenient for designers to upgrade applications in the field. The RL78/G1D MCUs also come with an evaluation kit (FCC, IC, CE, MIC, KC certified) that allows system designers to evaluate wireless characteristics and initial communication behaviors. A Bluetooth SIG-qualified protocol stack, PC GUI Evaluation tool, Radio certification guide allows designers to save time and cost.

Renesas Electronics Corporation Introduces Smallest R-Car-Based Development Kit 'The ADAS Starter Kit'

Renesas Electronics Corporation introduced the smallest R-Car-based development kit "the ADAS Starter Kit " based on Renesas™ high-end R-Car H2 System on Chip (SoC) and developed to help simplify and speed the development of advanced driver assistance systems (ADAS) applications. Complementing Renesas™ current R-Car V2H-based ADAS development boards, the new ADAS Starter Kit will enable users and partner companies to experience the enhanced computer vision performance of Renesas SoCs and accelerate the development of dedicated hardware and software solutions for future ADAS applications. The ADAS Starter Kit provides cutting-edge computer vision performance with OpenCV and high-performance graphics power based on OpenGLES, allowing customers and partners to develop their ADAS applications on a robust and high-performance platform. The new kit is powered by Linux, based on the Yocto distribution that is also used for other R-Car evaluation boards. The new starter kit is the smallest Renesas R-Car development kit to date, measuring only 10x10cm, and features pre-implemented interfaces and peripherals, which eliminates the need for any additional hardware. The core board comes with 2 GB of DDR3 RAM, 64MB of QSPI flash and a Micro SD card slot. This small form factor board also includes Ethernet, an HDMI output and a connector for a camera module. With the integrated extension connector, it is designed for easy customization. Users can easily design add-on boards that enable new use cases with little effort. The extension connector supports interfaces like PCI Express (PCIe), further displays outputs, and four channels for cameras as needed for surround view applications.

 

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Company Last Change
Infineon Technologies AG €10.24 EUR -0.131
MediaTek Inc 327.00 TWD +4.50
SanDisk Corp $60.63 USD +0.13
STMicroelectronics NV €7.13 EUR +0.098
Xilinx Inc $41.85 USD +0.3101
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RNECY

Industry Average

Valuation RNECY Industry Range
Price/Earnings 15.2x
Price/Sales 1.6x
Price/Book 4.1x
Price/Cash Flow 15.2x
TEV/Sales 0.8x
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