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Last $7.29 USD
Change Today 0.00 / 0.00%
Volume 0.0
RNECF On Other Exchanges
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As of 4:30 PM 06/17/14 All times are local (Market data is delayed by at least 15 minutes).

renesas electronics corp (RNECF) Snapshot

Open
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Previous Close
$7.29
Day High
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Day Low
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52 Week High
09/3/14 - $11.00
52 Week Low
01/21/15 - $6.34
Market Cap
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Average Volume 10 Days
0.0
EPS TTM
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Shares Outstanding
1.7B
EX-Date
03/27/07
P/E TM
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Dividend
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Dividend Yield
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Current Stock Chart for RENESAS ELECTRONICS CORP (RNECF)

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renesas electronics corp (RNECF) Details

Renesas Electronics Corporation engages in the research, development, design, manufacture, sale, and servicing of semiconductor products worldwide. It offers microcontrollers and microprocessors; power devices, such as power MOSFETs, IGBTs, intelligent power devices, thyristors and triacs, transistors, and diodes; and analog and mixed signal products, including ICs power management, driver ICs, and analog ICs for automotive applications, as well as ICs for leakage detection, audio, computing and peripherals, ICs for cameras, ICs for graphic controllers, and interfaces. The company also provides general-purpose linear and logic analog ICs; RF devices; optoelectronics comprising photo couplers, solid state relays, fiberoptic devices, and Blue-Violet lasers; LSIs for automotive and factory automation; memory products comprising SRAM, EEPROM, low latency DRAM, and TCAM; and ASIC products consisting of gate arrays, cell-based ICs, analog masters, mixed signal ASICs, customizable MCUs, and programmable XBridge. In addition, it offers USB power delivery controllers; LSI for communications and mobile devices; and Renesas synergy platform. The company was founded in 2002 and is headquartered in Tokyo, Japan.

21,083 Employees
Last Reported Date: 06/24/15
Founded in 2002

renesas electronics corp (RNECF) Top Compensated Officers

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renesas electronics corp (RNECF) Key Developments

Renesas Electronics Corporation Reports Unaudited Consolidated Earnings Results for the First Quarter Ended June 30, 2015; Provides Earnings Guidance for the Six Months Ending September 30, 2015

Renesas Electronics Corporation reported unaudited consolidated earnings results for the first quarter ended June 30, 2015. For the quarter, the company reported net sales of JPY 179,302 million against JPY 209,259 million a year ago. Operating income was JPY 32,363 million against JPY 26,984 million a year ago. Ordinary income was JPY 33,367 million against JPY 25,343 million a year ago. Net income attributable to shareholders of parent company was JPY 29,872 million or JPY 17.92 per basic share against JPY 21,199 million or JPY 12.72 per basic share a year ago. Capital expenditures was JPY 19.6 billion For the six months ending September 30, 2015, the company expects net sales of JPY 364,000 million, operating income of JPY 59,000 million, Ordinary income of JPY 58,000 million and net income attributable to shareholders of parent company of JPY 44,000 million or JPY 26.39 per basic share.

Renesas Electronics Corporation, Q1 2016 Earnings Call, Jul 31, 2015

Renesas Electronics Corporation, Q1 2016 Earnings Call, Jul 31, 2015

Renesas Electronics Corporation Announces the Release of Two New Series of Advanced Low Power SRAM

Renesas Electronics Corporation announced the release of two new series of Advanced Low Power SRAM (Advanced LP SRAM), the low-power-consumption SRAM, designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment, and the smart grid. Fabricated using the 110-nanometer (nm) process, the new RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32 Mb devices feature an innovative memory cell technology that dramatically improves reliability and contributes to longer battery operation. Renesas’ Advanced LP SRAM devices feature exclusive technology in their memory cells that achieves soft error resistance over 500 times that of conventional Full CMOS memory cells. This makes it desirable for use in fields requiring high reliability, including FA, measurement devices, smart grid-related devices, and industrial equipment, in addition to many other fields, such as consumer devices, office equipment, and communication devices. In the Renesas Advanced LP SRAM structure, a stacked capacitor is added to each memory node within the memory cells. This configuration suppresses the generation of soft errors to a level that is effectively soft error free. In addition, the load transistor (P-channel) of each SRAM cell is a polysilicon thin-film transistor (TFT) that is stacked on top of the N-channel MOS transistor formed on the silicon. Only the N-channel MOS transistor is formed on the silicon substrate below. This means that no parasitic thyristors are formed in the memory area and theoretically makes latch-up impossible. Therefore, the Advanced LP SRAM is well suited to applications requiring high reliability, such as FA, measurement devices, smart grid related devices, traffic systems, and industrial equipment. The standby current of the new RMLV1616A Series and RMWV3216A Series is only 0.5 microamperes (µA) (typical) for 16 Mb devices and 1 µA (typical) for 32 Mb devices. These low current consumption levels are less than half the levels of comparable earlier Renesas SRAM products, making it possible to extend the service life of backup batteries. The minimum power supply voltage when retaining data is 1.5 V, lower than the 2.0 V of comparable earlier Renesas products. This helps customers designing systems that retain data using battery power. The 16 Mb RMLV1616A Series is available in three packages: 48-ball FBGA, 48-pin TSOP (I), and 52-pin µTSOP (II), allowing customers to select the package that best matches their application. The 32 Mb RMWV3216A Series is available in a 48-ball FBGA package. Samples of the RMLV1616A Series and RMWV3216A Series will be available in September. Pricing varies depending on capacity. For example, the 16 Mb RMLV1616A Series is priced at $16.50 per unit, and the 32 Mb RMWV3216A Series at $31 per unit. Mass production of the two series is scheduled to begin in October 2015. Mass production using the 110 nm process has already begun for Advanced LP SRAM products with 4 Mbit and 8 Mbit capacities.

 

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RNECF

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Valuation RNECF Industry Range
Price/Earnings 14.0x
Price/Sales 1.7x
Price/Book 3.7x
Price/Cash Flow 14.0x
TEV/Sales 0.8x
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