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Last $418.00 MXN
Change Today +10.75 / 2.64%
Volume 2.5K
MU* On Other Exchanges
Symbol
Exchange
NASDAQ GS
Mexico
Frankfurt
As of 4:09 PM 03/31/15 All times are local (Market data is delayed by at least 15 minutes).

micron technology inc (MU*) Snapshot

Open
$417.00
Previous Close
$407.25
Day High
$418.00
Day Low
$416.00
52 Week High
12/29/14 - $528.00
52 Week Low
04/11/14 - $276.78
Market Cap
450.3B
Average Volume 10 Days
55.7K
EPS TTM
--
Shares Outstanding
1.1B
EX-Date
06/1/96
P/E TM
--
Dividend
--
Dividend Yield
--
Current Stock Chart for MICRON TECHNOLOGY INC (MU*)

micron technology inc (MU*) Details

Micron Technology, Inc., together with its subsidiaries, provides semiconductor solutions worldwide. The company manufactures and markets dynamic random access memory (DRAM), NAND flash, and NOR flash memory products; and packaging solutions and semiconductor systems. It operates in four segments: Compute and Networking Business Unit, Mobile Business Unit, Storage Business Unit, and Embedded Business Unit. The company offers DRAM products for data storage and retrieval, including DDR4, DDR3, and DDR2 that offer high speed and high bandwidth; reduced latency DRAM products that offer lower power consumption relative to other DRAM products; and other DRAM products to specialty markets, such as DDR2 DRAM, DDR DRAM, GDDR5 DRAM, SDRAM, reduced latency DRAM, and pseudo-static DRAM products that are used in networking devices, servers, consumer electronics, communications equipment, computer peripherals, and automotive and industrial applications, as well as computer memory upgrades. It also provides NAND flash memory products, such as flash memory cards comprising CompactFlash, Memory Stick, and Secure Digital; and JumpDrive products that are used in mobile phones, solid-state drives, tablets, computers, industrial and automotive applications, and other personal and consumer applications. In addition, the company resells flash memory products that are purchased from other NAND flash suppliers. Further, it provides NOR flash memory products that are electrically re-writeable, non-volatile semiconductor memory devices used in consumer electronics, industrial, wired and wireless communications, computing, and automotive applications. The company markets its products to original equipment manufacturers and retailers through its internal sales force, independent sales representatives, and distributors; and through a Web-based customer direct sales channel, and channel and distribution partners. Micron Technology, Inc. was founded in 1978 and is headquartered in Boise, Idaho.

30,400 Employees
Last Reported Date: 10/27/14
Founded in 1978

micron technology inc (MU*) Top Compensated Officers

Chief Executive Officer and Director
Total Annual Compensation: $1.0M
President and Interim Chief Financial Officer
Total Annual Compensation: $726.3K
Vice President of Memory Technology and Solut...
Total Annual Compensation: $581.7K
Vice President of Business Process Management
Total Annual Compensation: $417.1K
Vice President of Mobile Business Unit
Total Annual Compensation: $384.8K
Compensation as of Fiscal Year 2014.

micron technology inc (MU*) Key Developments

Micron Technology, Inc. and Intel Corporation Unveil New 3D NAND Flash Memory

Micron Technology, Inc. and Intel Corporation revealed the availability of their 3D NAND technology. Flash is the storage technology used inside the lightest laptops, fastest data centers, and nearly every cellphone, tablet and mobile device. This new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically with extraordinary precision to create storage devices with three times higher capacity1 than competing NAND technologies. This enables more storage in a smaller space, bringing significant cost savings, low power usage and high performance to a range of mobile consumer devices as well as the most demanding enterprise deployments. Planar NAND flash memory is nearing its practical scaling limits, posing significant challenges for the memory industry. 3D NAND technology is poised to make a dramatic impact by keeping flash storage solutions aligned with Moore’s Law, the trajectory for continued performance gains and cost savings, driving more widespread use of flash storage. Innovative Process Architecture: One of the most significant aspects of this technology is in the foundational memory cell itself. Intel and Micron chose to use a floating gate cell, a universally utilized design refined through years of high-volume planar flash manufacturing. This is the first use of a floating gate cell in 3D NAND, which was a key design choice to enable greater performance and increase quality and reliability. The new 3D NAND technology stacks flash cells vertically in 32 layers to achieve 256Gb multilevel cell (MLC) and 384Gb triple-level cell (TLC) die that fit within a standard package. These capacities can enable gum stick-sized SSDs with more than 3.5TB of storage and standard 2.5-inch SSDs with greater than 10TB. Because capacity is achieved by stacking cells vertically, the individual cell dimensions can be considerably larger. This is expected to increase both performance and endurance and make even the TLC designs well-suited for data center storage. The key product features of this 3D NAND design include: Large Capacities 'Three times the capacity of existing 3D technology1 'up to 48GB of NAND per die' enabling three-fourths of a terabyte to fit in a single fingertip-sized package. Reduced Cost per GB 'First-generation 3D NAND is architected to achieve better cost efficiencies than planar NAND. Fast High read/write bandwidth, I/O speeds and random read performance. Green New sleep modes enable low-power use by cutting power to inactive NAND die (even when other die in the same package are active), dropping power consumption significantly in standby mode. Smart Innovative new features improve latency and increase endurance over previous generations, and also make system integration easier. The 256Gb MLC version of 3D NAND is sampling with select partners today, and the 384Gb TLC design will be sampling later this spring. The fab production line has already begun initial runs, and both devices will be in full production by the fourth quarter of this year. Both companies are also developing individual lines of SSD solutions based on 3D NAND technology and expect those products to be available within 2016.

Photronics Enters into Strategic Supply and Technology License Agreements with Micron Technology, Inc

Photronics announced that it has entered into strategic supply and technology license agreements with Micron Technology, Inc. (MU) whereby Photronics will receive outsourced photomask supply volume from Micron. Micron and Photronics will not renew their existing MP Mask joint venture after May 5, 2016. The new agreement places Photronics in the majority merchant supplier position for Micron. Upon the conclusion of the MP Mask joint venture, Micron may elect to purchase the MP Mask assets or Photronics' equity interest in MP Mask, in which case Photronics will receive a payment based upon net book value as of May 5, 2016, which was approximately $93 million as of Dec. 4, 2014.

Micron Technology, Inc. Announces Availability of Ultra Reliable, Ultra High-Speed and Ultra High-Temperature Parallel NOR Flash and Low-Power DDR4 DRAM

Micron Technology, Inc. announced the availability of ultra reliable, ultra high-speed and ultra high-temperature parallel NOR Flash and low-power DDR4 (LPDDR4) DRAM to meet the increasing memory requirements for the automotive market segment. Micron's G18 NOR family offers the industry's highest-performance parallel NOR, while Micron's automotive-grade LPDDR4 solutions are an industry-first. These new products meet the needs of automotive applications that require ultra high speed. The G18 family's high performance (266 MB/s) enables faster boot and code execution for higher-density applications, while LPDDR4 enables 33% higher peak bandwidth than DDR4. Additionally, the company's new solutions deliver long-lasting reliability and meet ISO/TS certification requirements-with the G18 family enabling three times faster throughput over quad SPI NOR, and the LPDDR4 products undergoing additional package-level burn-in testing. Furthermore, the company's G18 NOR products have options that meet the industrial temperature (IT) range of -40 to 85°C and the automotive-grade automotive temperature (AAT) range of -40 to 105°C. The LPDDR4 products have options that meet the automotive-grade industrial temperature (AIT) range of -40 to 95°C, as well as some future options that will meet the automotive-grade ultra temperature (AUT) range of -40C to 125°C, which is the high operating temperature range in the industry, expected to be available in 2016. Micron G18 Family: The company's G18 Parallel NOR Flash solutions are ideal for automotive applications that require fast, reliable code storage and execution when milliseconds matter in boot performance and beyond, like advanced driver assistance systems (ADAS) rear-view cameras, which need fast boot speed for instant readiness. G18 NOR Flash delivers read speeds up to 266 MB/s and fast load times that meet 200mus boot requirements; it's also three times faster than quad SPI NOR. G18 NOR Flash provides low 1.8V core and I/O voltage for better power consumption in a small package. The G18 line also provides A/D MUX and AA/D MUX configurations that reduce I/O ball count by more than 50% over traditional parallel NOR products, providing the best bandwidth per pin. In addition to enabling automotive solutions, G18 devices are ideal for equipment automation, enterprise server, and networking applications as well as wearable devices, digital still cameras, medical test equipment, and more. Micron Automotive LPDDR4 Family: LPDDR4 builds upon the ultra-efficient foundation of LPDDR3 to make significant improvements in performance, power, latency and physical space. Micron's Automotive LPDDR4 solutions introduce new energy efficiencies while providing twice the bandwidth of LPDDR3, making it an important technology for enabling next-generation automotive applications. LPDDR4 enables data transfer rates up to 4.266 GT/s, which provides greater peak bandwidth using less energy per bit than LPDDR3. The faster I/O data rate delivers speeds up to 3200 Mb/s to enable displays with up to 4K x 2K resolution and 3D graphics on automotive infotainment systems, as well as more advanced ADAS capabilities for collision avoidance and safer driving. These efficiency gains apply not just to peak bandwidth but to lower bandwidth use cases as well.

 

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Price/Earnings 8.7x
Price/Sales 1.7x
Price/Book 2.5x
Price/Cash Flow 7.8x
TEV/Sales 1.1x
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