Bloomberg the Company & Products

Bloomberg Anywhere Login


Connecting decision makers to a dynamic network of information, people and ideas, Bloomberg quickly and accurately delivers business and financial information, news and insight around the world.


Financial Products

Enterprise Products


Customer Support

  • Americas

    +1 212 318 2000

  • Europe, Middle East, & Africa

    +44 20 7330 7500

  • Asia Pacific

    +65 6212 1000


Industry Products

Media Services

Follow Us

Last $28.26 USD
Change Today +0.24 / 0.86%
Volume 19.9M
MU On Other Exchanges
As of 8:10 PM 04/20/15 All times are local (Market data is delayed by at least 15 minutes).

micron technology inc (MU) Snapshot

Previous Close
Day High
Day Low
52 Week High
12/8/14 - $36.59
52 Week Low
04/28/14 - $24.19
Market Cap
Average Volume 10 Days
Shares Outstanding
Dividend Yield
Current Stock Chart for MICRON TECHNOLOGY INC (MU)

micron technology inc (MU) Details

Micron Technology, Inc., together with its subsidiaries, provides semiconductor solutions worldwide. The company manufactures and markets dynamic random access memory (DRAM), NAND flash, and NOR flash memory products; and packaging solutions and semiconductor systems. It operates in four segments: Compute and Networking Business Unit, Mobile Business Unit, Storage Business Unit, and Embedded Business Unit. The company offers DRAM products for data storage and retrieval, including DDR4, DDR3, and DDR2 that offer high speed and high bandwidth; reduced latency DRAM products that offer lower power consumption relative to other DRAM products; and other DRAM products to specialty markets, such as DDR2 DRAM, DDR DRAM, GDDR5 DRAM, SDRAM, reduced latency DRAM, and pseudo-static DRAM products that are used in networking devices, servers, consumer electronics, communications equipment, computer peripherals, and automotive and industrial applications, as well as computer memory upgrades. It also provides NAND flash memory products, such as flash memory cards comprising CompactFlash, Memory Stick, and Secure Digital; and JumpDrive products that are used in mobile phones, solid-state drives, tablets, computers, industrial and automotive applications, and other personal and consumer applications. In addition, the company resells flash memory products that are purchased from other NAND flash suppliers. Further, it provides NOR flash memory products that are electrically re-writeable, non-volatile semiconductor memory devices used in consumer electronics, industrial, wired and wireless communications, computing, and automotive applications. The company markets its products to original equipment manufacturers and retailers through its internal sales force, independent sales representatives, and distributors; and through a Web-based customer direct sales channel, and channel and distribution partners. Micron Technology, Inc. was founded in 1978 and is headquartered in Boise, Idaho.

30,400 Employees
Last Reported Date: 10/27/14
Founded in 1978

micron technology inc (MU) Top Compensated Officers

Chief Executive Officer and Director
Total Annual Compensation: $1.0M
President and Interim Chief Financial Officer
Total Annual Compensation: $726.3K
Vice President of Memory Technology and Solut...
Total Annual Compensation: $581.7K
Vice President of Business Process Management
Total Annual Compensation: $417.1K
Vice President of Mobile Business Unit
Total Annual Compensation: $384.8K
Compensation as of Fiscal Year 2014.

micron technology inc (MU) Key Developments

Micron Technology, Inc. Announces Consolidated Earnings Results for the Second Quarter and Six Months Ended March 5, 2015; Provides Revenue Guidance for the Third Quarter of Fiscal 2015; Provides Capital Expenditures for the Fiscal Year of 2015

Micron Technology, Inc. announced consolidated earnings results for the second quarter and six months ended March 5, 2015. For the quarter, the company reported net sales of $4,166 million against $4,107 million a year ago. Operating income was $855 million against $869 million a year ago. Net income attributable to the company was $934 million or $0.78 per diluted share against $731 million or $0.61 per diluted share a year ago. Non-GAAP net income attributable to the company was $941 million or $0.81 per diluted share. Revenues for the second quarter of fiscal 2015 were 9% lower compared to the first quarter of fiscal 2015 primarily due to declines in DRAM unit volumes as a result of one less week in the second quarter of fiscal 2015, and to decreases in average selling prices for both NAND and DRAM. For the six months, the company reported net sales of $8,739 million against $8,149 million a year ago. Operating income was $1,940 million against $1,420 million a year ago. Net income attributable to the company was $1,937 million or $1.62 per diluted share against $1,089 million or $0.91 per diluted share a year ago. Net cash provided by operating activities was $2,843 million against $2,897 million a year ago. Expenditures for property, plant and equipment was $1,522 million against $1,234 million a year ago. For the third quarter, the company expected revenue guidance is between $3.8 billion to $4.05 billion. The midpoint of the range is about 6% lower than revenue in second quarter. The company continues to expect expenditures for the fiscal year to be between $3.6 billion and $4 billion with a stepped-up level of spending in the latter half of the fiscal year as execute on 20-nanometer DRAM and commence 3D NAND investments.

Micron Technology, Inc. to Report Q2, 2015 Results on Apr 01, 2015

Micron Technology, Inc. announced that they will report Q2, 2015 results at 8:04 PM, GMT Standard Time on Apr 01, 2015

Micron Technology, Inc. and Intel Corporation Unveil New 3D NAND Flash Memory

Micron Technology, Inc. and Intel Corporation revealed the availability of their 3D NAND technology. Flash is the storage technology used inside the lightest laptops, fastest data centers, and nearly every cellphone, tablet and mobile device. This new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically with extraordinary precision to create storage devices with three times higher capacity1 than competing NAND technologies. This enables more storage in a smaller space, bringing significant cost savings, low power usage and high performance to a range of mobile consumer devices as well as the most demanding enterprise deployments. Planar NAND flash memory is nearing its practical scaling limits, posing significant challenges for the memory industry. 3D NAND technology is poised to make a dramatic impact by keeping flash storage solutions aligned with Moore’s Law, the trajectory for continued performance gains and cost savings, driving more widespread use of flash storage. Innovative Process Architecture: One of the most significant aspects of this technology is in the foundational memory cell itself. Intel and Micron chose to use a floating gate cell, a universally utilized design refined through years of high-volume planar flash manufacturing. This is the first use of a floating gate cell in 3D NAND, which was a key design choice to enable greater performance and increase quality and reliability. The new 3D NAND technology stacks flash cells vertically in 32 layers to achieve 256Gb multilevel cell (MLC) and 384Gb triple-level cell (TLC) die that fit within a standard package. These capacities can enable gum stick-sized SSDs with more than 3.5TB of storage and standard 2.5-inch SSDs with greater than 10TB. Because capacity is achieved by stacking cells vertically, the individual cell dimensions can be considerably larger. This is expected to increase both performance and endurance and make even the TLC designs well-suited for data center storage. The key product features of this 3D NAND design include: Large Capacities 'Three times the capacity of existing 3D technology1 'up to 48GB of NAND per die' enabling three-fourths of a terabyte to fit in a single fingertip-sized package. Reduced Cost per GB 'First-generation 3D NAND is architected to achieve better cost efficiencies than planar NAND. Fast High read/write bandwidth, I/O speeds and random read performance. Green New sleep modes enable low-power use by cutting power to inactive NAND die (even when other die in the same package are active), dropping power consumption significantly in standby mode. Smart Innovative new features improve latency and increase endurance over previous generations, and also make system integration easier. The 256Gb MLC version of 3D NAND is sampling with select partners today, and the 384Gb TLC design will be sampling later this spring. The fab production line has already begun initial runs, and both devices will be in full production by the fourth quarter of this year. Both companies are also developing individual lines of SSD solutions based on 3D NAND technology and expect those products to be available within 2016.


Stock Quotes

Market data is delayed at least 15 minutes.

Company Lookup
Recently Viewed
MU:US $28.26 USD +0.24

MU Competitors

Market data is delayed at least 15 minutes.

Company Last Change
Alcatel-Lucent €3.66 EUR -0.041
Nokia OYJ €7.10 EUR -0.05
Seagate Technology PLC $59.14 USD +1.71
SK Hynix Inc 44,800 KRW +550.00
Western Digital Corp $101.58 USD +2.14
View Industry Companies

Industry Analysis


Industry Average

Valuation MU Industry Range
Price/Earnings 8.6x
Price/Sales 1.8x
Price/Book 2.4x
Price/Cash Flow 7.8x
TEV/Sales 1.1x

Sponsored Financial Commentaries

Sponsored Links

Report Data Issue

To contact MICRON TECHNOLOGY INC, please visit Company data is provided by Capital IQ. Please use this form to report any data issues.

Please enter your information in the following field(s):
Update Needed*

All data changes require verification from public sources. Please include the correct value or values and a source where we can verify.

Your requested update has been submitted

Our data partners will research the update request and update the information on this page if necessary. Research and follow-up could take several weeks. If you have questions, you can contact them at