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Last $76.00 USD
Change Today +0.55 / 0.73%
Volume 387.2K
LRCX On Other Exchanges
Symbol
Exchange
NASDAQ GS
As of 10:31 AM 07/28/15 All times are local (Market data is delayed by at least 15 minutes).

lam research corp (LRCX) Snapshot

Open
$75.70
Previous Close
$75.45
Day High
$76.38
Day Low
$74.78
52 Week High
12/4/14 - $85.70
52 Week Low
10/10/14 - $65.78
Market Cap
12.0B
Average Volume 10 Days
2.0M
EPS TTM
$3.98
Shares Outstanding
158.3M
EX-Date
06/8/15
P/E TM
19.1x
Dividend
$1.20
Dividend Yield
1.11%
Current Stock Chart for LAM RESEARCH CORP (LRCX)

lam research corp (LRCX) Related Businessweek News

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lam research corp (LRCX) Details

Lam Research Corporation designs, manufactures, markets, refurbishes, and services semiconductor processing systems used in the fabrication of integrated circuits. The company provides thin film deposition products, including SABRE Product Family for copper damascene manufacturing; ALTUS systems deposit conformal atomic layer films for tungsten metallization applications; VECTOR family of plasma-enhanced chemical vapor deposition systems for the deposition of ashable hardmasks, oxides, nitrides, carbides, and anti-reflective layers; SPEED high-density plasma-chemical vapor deposition products for applications in STI, pre-metal dielectrics, inter-layer dielectrics, inter-metal dielectrics, and passivation layers; and SOLA ultraviolet thermal processing product family for the treatment of back-end-of-line low-k dielectric films and front-end-of-line silicon nitride strained films. The company also offers plasma etch products that remove materials from the wafer to create the features and patterns of a device. Its plasma etch products include 2300 Kiyo Product Family that provides solutions for conductor etch applications; 2300 Flex Product Family, which offers technologies and application-focused capabilities for dielectric etch applications; and 2300 Syndion Product Family that provides solutions to address multiple through-silicon via etch applications. In addition, the company provides photoresist strip systems, which remove the photoresist mask before a wafer proceeds to the next processing step; single-wafer wet and plasma-based wafer cleaning products that remove particles and residues from the wafer surface before or after adjacent processes; and refurbished and newly built legacy products. The company offers its products in the United States, Europe, Korea, Taiwan, Japan, Southeast Asia, and China. Lam Research Corporation was founded in 1980 and is headquartered in Fremont, California.

7,000 Employees
Last Reported Date: 04/30/15
Founded in 1980

lam research corp (LRCX) Top Compensated Officers

Chief Executive Officer, President and Direct...
Total Annual Compensation: $803.8K
Chief Financial Officer, Chief Accounting Off...
Total Annual Compensation: $494.2K
Chief Operating Officer and Executive Vice Pr...
Total Annual Compensation: $1.6M
Executive Vice President of Global Products G...
Total Annual Compensation: $475.0K
Chief Legal Officer, Senior Vice President an...
Total Annual Compensation: $408.1K
Compensation as of Fiscal Year 2014.

lam research corp (LRCX) Key Developments

Lam Research Corp. Introduces Flex G Series for HAR Dielectric Etch

Lam Research Corp. has introduced the Flex G Series for high-aspect-ratio, or HAR, dielectric etch to enable the continued scaling of DRAM and 3D NAND devices. The HAR capacitor cells and vertical transistor channels within these devices require the formation of distortion-free vertical profiles from the top to the bottom of these tall, narrow features. Built upon Lam's Flex product family, the market leader in dielectric etch for memory, the new system meets these challenges by combining high ion energy, advanced process uniformity tuning, and proprietary RF pulsing. Together, these deliver overall best-in-class on-wafer performance, as well as the productivity needed to reduce manufacturing costs. For DRAM, scaling below 20 nm makes the dimensions of the capacitor (cell) features even more extreme and therefore harder to etch. These applications require stringent critical dimension (CD) control throughout the depth of the feature and tight across-wafer uniformity for both etch depth and profile. Similarly for 3D NAND, critical HAR processes include the vertical transistor channel and slit. Due to challenging dimensions, HAR structures are especially vulnerable to bowing, distortions such as tilting or twisting, and premature etch-stop. To address these issues, high selectivity and controlled material removal are required. The Flex G Series is the newest addition to Lam's Flex product line, which leads the dielectric etch market for memory applications. To address next-generation DRAM and 3D NAND scaling challenges, the system uses high ion energy to enable complete removal of material down to the bottom of HAR features. Advanced plasma confinement and RF pulsing capabilities result in better than 2x improved mask selectivity and bowing-free, vertical profiles with minimal distortion. In addition, excellent CD uniformity control is enabled by advanced multi-zone gas distribution. Leveraging the proven manufacturing performance of the Flex product family, the system provides best-in-class productivity with fast etch rates.

Lam Research Corp. Releases VECTOR ALD Oxide System

Lam Research Corp. has released its VECTOR ALD Oxide system on the Extreme platform. The new product uses atomic layer deposition (ALD) to create highly conformal dielectric films with an emphasis on advanced patterning, in particular spacer-based multiple patterning. One key challenge is managing thickness variability of the self-aligned spacers that define critical dimensions (CDs). By delivering superior CD control, VECTOR ALD Oxide has been winning volume-production decisions for multi-patterning applications. Now leveraging Lam's Extreme platform, the latest system meets productivity requirements for continued scaling, where additional steps increase process time, cost, and complexity. As a result, VECTOR ALD Oxide is gaining rapid adoption by a number of chipmakers for advanced multi-step patterning applications. Lam's advanced ALD capabilities, the latest VECTOR ALD Oxide system delivers the uniformity required for CD control of the ultra-thin films critical to SADP and SAQP schemes. The quad-station modules process four wafers simultaneously and share components to improve reliability and chamber matching, contributing to wafer-to-wafer repeatability performance. The system's compact design delivers as much as 20% higher footprint productivity compared with other solutions. Process hardware has also been optimized to enable fast gas and RF switching, increasing throughput and reducing precursor usage for improved running costs. These innovative process module features combined with the high-productivity platform deliver the performance and cost-efficiency needed for manufacturing. Consequently, VECTOR ALD Oxide is winning development and production tool of record positions at manufacturers for advanced multi-patterning applications. This momentum is being successfully expanded to other applications, such as high-aspect ratio liners for through-silicon vias (TSVs) and image sensors.

Lam Research Corporation - Shareholder/Analyst Call

Lam Research Corporation - Shareholder/Analyst Call

 

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LRCX

Industry Average

Valuation LRCX Industry Range
Price/Earnings 17.8x
Price/Sales 2.4x
Price/Book 2.3x
Price/Cash Flow 15.8x
TEV/Sales 1.1x
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