Last $11.72 USD
Change Today +0.21 / 1.82%
Volume 99.4K
IXYS On Other Exchanges
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As of 8:10 PM 01/26/15 All times are local (Market data is delayed by at least 15 minutes).

ixys corporation (IXYS) Snapshot

Open
$11.43
Previous Close
$11.51
Day High
$11.90
Day Low
$11.43
52 Week High
07/7/14 - $13.37
52 Week Low
10/13/14 - $9.22
Market Cap
369.7M
Average Volume 10 Days
107.9K
EPS TTM
$0.31
Shares Outstanding
31.5M
EX-Date
12/17/14
P/E TM
37.3x
Dividend
$0.14
Dividend Yield
1.11%
Current Stock Chart for IXYS CORPORATION (IXYS)

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ixys corporation (IXYS) Details

IXYS Corporation, an integrated semiconductor company, designs, develops, manufactures, and markets power semiconductors, digital and analog integrated circuits (ICs), and systems and radio frequency (RF) power semiconductors worldwide. Its power semiconductors include power metal-oxide-silicon field-effect transistors and insulated-gate bipolar transistors; and thyristors and rectifiers, such as fast-recovery epitaxial diodes. The company’s ICs comprise solid state relays; line card access switch and data access arrangements integrated products; application specific integrated circuits; power management and control ICs; and microcontrollers. Its RF power semiconductors consist of field-effect transistors, pseudomorphic-high-electron-mobility transistors, and Gunn diodes which enable the amplification or reception of radio frequencies in telecommunication, industrial, defense, and space applications; and systems and other products comprise laser diode drivers, high voltage pulse generators and modulators, high power subsystems, and direct copper bond substrates. The company’s power semiconductors are used to control electricity in power conversion systems, motor drives, and medical electronics; and ICs are used to interface with telecommunication lines, control power semiconductors, and drive medical equipment and displays, as well as to integrate peripheral functions, such as network connectivity, timers, serial communication, analog-to-digital conversion, and display drivers on company’s micrologic devices. IXYS Corporation markets and sells its products through direct sales personnel, independent representatives, and distributors. The company was founded in 1983 and is headquartered in Milpitas, California.

1,016 Employees
Last Reported Date: 06/13/14
Founded in 1983

ixys corporation (IXYS) Top Compensated Officers

Founder, Chairman and Chief Executive Officer
Total Annual Compensation: $706.8K
President, Chief Financial Officer, Chief Acc...
Total Annual Compensation: $479.1K
Compensation as of Fiscal Year 2014.

ixys corporation (IXYS) Key Developments

IXYS Corp. Presents at Sidoti & Company Emerging Growth Institutional Investor Forum, Jan-12-2015 02:10 PM

IXYS Corp. Presents at Sidoti & Company Emerging Growth Institutional Investor Forum, Jan-12-2015 02:10 PM. Venue: The Grand Hyatt Hotel, New York, New York, United States. Speakers: Nathan Zommer, Founder, Chairman and Chief Executive Officer.

IXYS Declares Quarterly Cash Dividend, Payable on January 12, 2015

IXYS Corporation announced that its board of directors has declared a quarterly cash dividend on its common stock of $0.035 per share. The quarterly dividend will be paid on January 12, 2015 to stockholders of record on December 19, 2014.

IXYS Corporation Releases 3600V Reverse Conducting IGBTs (BiMOSFETs(TM))

IXYS Corporation announced the release of the new 3600V Reverse Conducting IGBTs (BiMOSFETs(TM)). Featuring 'free' intrinsic body diodes and current ratings from 45A to 125A, these devices present combined strengths of both MOSFETs and IGBTs. They are ideal for high speed, high voltage, and high current power conversion applications. By using these high voltage BiMOSFETs(TM), power circuit designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying their associated gate drive circuitry. This results in much simpler system designs with lower costs and improved reliability. The positive temperature coefficient of the on-state voltage and diode forward voltage can be operated in parallel to meet even higher current requirements. Furthermore, during the turn-off transition, the intrinsic body diode provides a path for the inductive load current, suppressing high voltage transients from inflicting damage to the device. The new 3600V BiMOSFETs(TM) can be utilized in a number of power switching systems, including switched mode and resonant mode power supplies, uninterruptible power supplies, laser and X-ray generators, capacitor discharge circuits and AC switches. These reverse conducting IGBTs are available in the following international standard size packages: ISOPLUS i4-Pak(TM), ISOPLUS i5-Pak(TM), and TO-247PLUS-HV. The first two packages provide an electrical isolation of 4000V through the Direct Copper Bond (DCB) substrate technology. The TO-247PLUS-HV has an increased creepage distance between leads, making it possible to withstand higher voltages. The part numbers include IXBF20N360, IXBF50N360, IXBL60N360, and IXBX50N360HV, with collector current ratings of 45A, 70A, 92A and 125A, respectively.

 

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Industry Analysis

IXYS

Industry Average

Valuation IXYS Industry Range
Price/Earnings 36.9x
Price/Sales 1.0x
Price/Book 1.3x
Price/Cash Flow 18.2x
TEV/Sales 0.5x
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