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Last $11.91 USD
Change Today +0.11 / 0.93%
Volume 52.2K
As of 4:00 PM 03/30/15 All times are local (Market data is delayed by at least 15 minutes).

ixys corporation (IXYS) Snapshot

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52 Week High
07/7/14 - $13.37
52 Week Low
10/13/14 - $9.22
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Average Volume 10 Days
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Current Stock Chart for IXYS CORPORATION (IXYS)

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ixys corporation (IXYS) Details

IXYS Corporation, an integrated semiconductor company, designs, develops, manufactures, and markets power semiconductors, digital and analog integrated circuits (ICs), and systems and radio frequency (RF) power semiconductors worldwide. Its power semiconductors include power metal-oxide-silicon field-effect transistors and insulated-gate bipolar transistors; and thyristors and rectifiers, such as fast-recovery epitaxial diodes. The company’s ICs comprise solid state relays; line card access switch and data access arrangements integrated products; application specific integrated circuits; power management and control ICs; and microcontrollers. Its RF power semiconductors consist of field-effect transistors, pseudomorphic-high-electron-mobility transistors, and Gunn diodes which enable the amplification or reception of radio frequencies in telecommunication, industrial, defense, and space applications; and systems and other products comprise laser diode drivers, high voltage pulse generators and modulators, high power subsystems, and direct copper bond substrates. The company’s power semiconductors are used to control electricity in power conversion systems, motor drives, and medical electronics; and ICs are used to interface with telecommunication lines, control power semiconductors, and drive medical equipment and displays, as well as to integrate peripheral functions, such as network connectivity, timers, serial communication, analog-to-digital conversion, and display drivers on company’s micrologic devices. IXYS Corporation markets and sells its products through direct sales personnel, independent representatives, and distributors. The company was founded in 1983 and is headquartered in Milpitas, California.

1,016 Employees
Last Reported Date: 06/13/14
Founded in 1983

ixys corporation (IXYS) Top Compensated Officers

Founder, Chairman, Chief Executive Officer an...
Total Annual Compensation: $706.8K
President, Chief Financial Officer, Chief Acc...
Total Annual Compensation: $479.1K
Compensation as of Fiscal Year 2014.

ixys corporation (IXYS) Key Developments

IXYS Corp. Adds 2000V 2000V Power MOSFETs to its High Voltage Product Portfolio

IXYS Corporation announced an expansion of its high voltage Power MOSFET product portfolio, the 2000V N-Channel Power MOSFETs. With a current rating of 1A, they are specifically designed for high voltage, high speed power conversion applications. Due to the positive temperature coefficient of their on-state resistance, these high voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series connected devices and enabling cost effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability and PCB space saving. These new Power MOSFETs are suitable for a wide variety of power switching systems, including high voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high voltage automated test equipment and energy tapping applications from the power grid. The 2000V Power MOSFETs are available in the following international standard size packages: TO-247, TO-247HV and TO-263HV. The latter two have increased creepage distances between leads, making them possible to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV and IXTA1N200P3HV.

IXYS Corporation Adopts Amended and Restated Bylaws

On March 13, 2015, the Board of Directors of IXYS Corporation adopted Amended and Restated Bylaws for the company. The changes in the amended bylaws include the advance notice of stockholder business and nominations.

IXYS Corp. Introduces the IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

IXYS Corporation announced the introduction of its IXZ631 Series CMOS high-speed, high-current integrated gate driver and MOSFET modules by its IXYSColorado division. The modules are specifically designed for Class D, E, HF and RF applications at up to 27 MHz, as well as other applications requiring high-speed, high-power switching. The IXZ631 modules feature the IXRFD630 high-speed gate driver paired with an RF power MOSFET, packaged in IXYSRF's DE-Series low-inductance surface mount RF package, incorporating layout techniques to minimize stray lead inductance for optimum switching performance. Designed with small internal delays, the modules are suitable for high-power operation where combiners are used. Their features and wide safety margin in operating voltage and power make the modules unmatched in performance and value. Two devices are available, the IXZ631DF12N100 1,000 volt 12 ampere device and the 500 volt 18 ampere IXZ631DF18N50. Both modules produce voltage rise and fall times of less than 5 nanoseconds, and minimum pulse widths of 8 nanoseconds. In pulsed mode, the 500 volt module provides up to 95 amperes of peak current; the 1,000 volt module provides 72 amperes. IXZ631 Series Features: Isolated Substrate, High isolation voltage (in excess of 2500 V), Excellent thermal transfer, Increased temperature and power cycling capability, Low RDS(ON), Very low insertion inductance, No Beryllium Oxide (BeO), Latch-up protected, Kelvin ground connection on the input side to avoid problems with ground bounce, Low quiescent supply current, RoHS compliant. IXZ631 Series Advantages: Optimized for RF and high-speed switching, Easy to mount, no insulators needed, high-power density and Single package reduces size and heat sink area.


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Valuation IXYS Industry Range
Price/Earnings 23.6x
Price/Sales 1.1x
Price/Book 1.4x
Price/Cash Flow 15.5x
TEV/Sales 0.6x

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