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Last $12.34 USD
Change Today 0.00 / 0.00%
Volume 0.0
IFNNF On Other Exchanges
Symbol
Exchange
OTC US
OTC US
Xetra
Xetra
As of 8:09 PM 06/30/15 All times are local (Market data is delayed by at least 15 minutes).

infineon technologies ag (IFNNF) Snapshot

Open
$12.34
Previous Close
$12.34
Day High
$12.34
Day Low
$12.34
52 Week High
06/22/15 - $13.45
52 Week Low
10/16/14 - $8.96
Market Cap
13.9B
Average Volume 10 Days
267.2
EPS TTM
--
Shares Outstanding
1.1B
EX-Date
02/13/15
P/E TM
--
Dividend
$0.19
Dividend Yield
1.65%
Current Stock Chart for INFINEON TECHNOLOGIES AG (IFNNF)

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infineon technologies ag (IFNNF) Details

Infineon Technologies AG offers semiconductors and system solutions in Europe, the Middle East, Africa, the Asia-Pacific, and the Americas. It operates through four segments: Automotive, Industrial Power Control, Power Management & Multimarket, and Chip Card & Security. The Automotive segment offers microcontrollers automotive and industrial applications; software development platform; discrete power semiconductors; IGBT modules; voltage regulators; power ICs; bus interface devices; magnetic and pressure sensors; and wireless transmit and receive ICs. Its products used in chassis and comfort electronics, electric and hybrid vehicles, and power trains, as well as safety and security applications. The Industrial Power Control segment provides IGBT modules, discrete IGBTs, bare dies, and driver ICs used in charger station for electric vehicles, energy transmission and conversion, home appliances, industrial drives, industrial vehicles, renewable energy generation, tractions, and uninterruptable power supplies. The Power Management & Multimarket segment offers discrete low-voltage and high-voltage power transistors, driver ICs, control ICs, RF power transistors, CMOS RF switches for antenna modules, antenna tuning ICs, MEMS and ASICs for silicon microphones, and customized chips, as well as small-signal components, such as transient voltage suppressor and low noise amplifiers. Its products are used in a range of applications, including cellular network infrastructure, light management and LED lighting systems, micro-inverter for photovoltaic rooftop systems, mobile devices, and power supplies. The Chip Card & Security segment provides contact-based and contactless security controllers, and dual interface security controllers. Its products are authentication, government identification, health care cards, mobile communication, near field communication, payment system, ticketing access control, and computing applications. The company is headquartered in Neubiberg, Germany.

34,928 Employees
Last Reported Date: 05/11/15

infineon technologies ag (IFNNF) Top Compensated Officers

Chief Executive Officer, Labor Director and M...
Total Annual Compensation: €1.4M
Chief Financial Officer, Executive Vice Presi...
Total Annual Compensation: €993.0K
Executive Vice President and Member of the Ma...
Total Annual Compensation: €993.0K
Compensation as of Fiscal Year 2014.

infineon technologies ag (IFNNF) Key Developments

Infineon Technologies Launches New RCDC Chip

Infineon Technologies AG has launched the new Reverse Conducting IGBT with Diode Control, RCDC, chip, a 6.5kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC chip is ideal for modern high-speed trains and high-performance locomotives as well as for future HVDC electric power transmission systems and medium voltage drives used for example in oil, gas and mining industries. Compared to previous modules with the same footprint, the RCDC technology delivers a 33% increase in current density and improved thermal performance. Thus it supports longer lifecycles and enhanced reliability, ultimately minimizing maintenance. With the RCDC technology Infineon extends its high-performance 6.5kV KE3 portfolio of IGBTs. The increased current density is a result of more active silicon area in both forward and reverse current direction giving designers the flexibility to increase system output power without incurring space penalties. Alternatively, the benefits of increased power density can be used to maintain power while reducing the number of IGBTs and, therefore, system size, weight - and cost. Infineon's RCDC solution is supplied in an IHV-A high isolation package with an industry-standard footprint, supporting 'drop-in' replacement for existing applications. As well as facilitating higher power densities, the monolithic integration of IGBT and diode results in a significant improvement in the diode I 2t value and the IGBT and diode thermal impedance (R th/Z th). The latter ensures good thermal performance over the full range of operation. A lower virtual junction temperature (T vj) ripple supports extended lifetime operation, while the option to use gate control allows designers to optimize overall efficiency by trading off conduction and switching losses.

Infineon Introduces IR7xxxS Series of 700V HVICs

Infineon Technologies AG has announced the introduction of the new IR7xxxS series of 700V high-voltage ICs, or HVICs, optimized for solar, power supply, uninterruptible power supplies, or UPS, welding and industrial drive applications. The new IR7xxxS series of HVICs feature sink/source ratings from 60 mA to 2,300 mA and utilize PN junction technology. Available in half bridge and high- and low-side configurations, the new HVICs are optimized for 700 V MOSFETs and 650 V IGBTs and offer full driver capability with extremely fast switching speeds to reduce magnetics component count. Other key features of the new devices include under-voltage lock-out protection for both channels, lower di/dt gate driver for better noise immunity. In addition, the HVICs are tolerant to negative transient voltage dv/dt, offer matched propagation delay for both channels and are 3.3 V and 15 V input logic compatible. The new IR7xxxS series is available in Surface Mount (8-SOIC) packages in high volume. The devices are lead free and RoHS compliant.

Infineon Technologies AG Expands MOSFET Portfolio with OptiMOS 300 V

Infineon Technologies AG announced that it has expanded its medium voltage MOSFET portfolio with OptiMOS 300 V. The new OptiMOS 300 V helps system designers to increase power density and reduce cost with the high level of reliability. Ultimately, for the end user, this translates into energy cost savings. Furthermore, OptiMOS 300 V can provide voltage spike headroom for better reliability, safety and ease of design in a 60 V telecom rectifier. The number of stages required in cascaded high voltage switch mode power supplies can also be reduced. Additionally, 110 V AC UPS can now be realized with OptiMOS 300 V. Incorporating fast diode technology, OptiMOS 300 V offers 70% lower reverse recovery charge Qrr compared to the next best alternative device. This characteristic leads to smooth body diode behavior and minimizes voltage overshoot. OptiMOS 300 V in the TO-220 package provides the industry's best R DS(on) with more than 58% lower Figure of Merit (FOM: R DS(on) x Q g) when compared to other available products. This translates directly into lower conduction losses and improved overall efficiency in high current applications such as motor control.

 

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IFNNF

Industry Average

Valuation IFNNF Industry Range
Price/Earnings 26.7x
Price/Sales 2.7x
Price/Book 3.1x
Price/Cash Flow 24.8x
TEV/Sales 2.0x
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