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sk hynix inc (HXSCF) Snapshot

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52 Week High
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52 Week Low
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Market Cap
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Average Volume 10 Days
0.0
EPS TTM
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Shares Outstanding
728.0M
EX-Date
12/29/14
P/E TM
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Dividend
$301.06
Dividend Yield
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Current Stock Chart for SK HYNIX INC (HXSCF)

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sk hynix inc (HXSCF) Details

SK Hynix Inc. manufactures and sells semiconductor products in South Korea and internationally. The company’s product portfolio includes dynamic random access memory (DRAM) products for personal computers, laptops, and servers; low-power mobile DRAMs; high-speed graphic DRAMs for graphic data processing; and consumer DRAMs for digital devices. These products support various interfaces, including DDR, DDR2, and DDR3 interfaces. The company also offers NAND flash products used for data storage in MP3 players, PMPs, digital cameras, navigational devices, smartphones, tablet PCs, and solid state drives (SSD); and NAND solutions, such as multi chip package, embedded flash, and SSD solutions. In addition, it provides CMOS image sensors that are non-memory semiconductors used as electronic film and electronic eyes for various IT and consumer devices, including Web cameras, miniaturized medical imaging equipment, and mobile phones. The company was formerly known as Hynix Semiconductor Inc. and changed its name to SK Hynix Inc. in March 2012. SK Hynix Inc. was founded in 1983 and is headquartered in Icheon, South Korea.

sk hynix inc (HXSCF) Top Compensated Officers

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sk hynix inc (HXSCF) Key Developments

SK Hynix Inc., Annual General Meeting, Mar 20, 2015

SK Hynix Inc., Annual General Meeting, Mar 20, 2015., at 10:00 Korea Standard Time. Location: 2091, Gyeonggi bubaleup chungdae. Agenda: To consider approval of financial statements for the year ended December 31, 2014; to consider appointment of inside directors; to consider appointment of outside Directors; to consider appointment of Audit Committee; and to consider approval of directors remuneration.

Sk Hynix Inc. Announces Installation of 8Gb LPDDR4 in new smartphone

SK Hynix Inc., has announced the installation of its 8Gb LPDDR4, or low power DDR4, in a new smartphone model. It is the top mobile DRAM solution existing of high density which features ultrahigh speed and low power consumption developed by the Company for the first time in the world at the end of 2013. SK Hynix has collaborated with relevant clients to make the world's first installation of LPDDR4 in the smart device. As a result, the Company succeeded to commercialize the 8Gb LPDDR4 in connection with a SoC(System on Chip) then loaded it onto the new smartphone of a client. This 8Gb LPDDR4 works faster than 3,200Mbps and operates at ultralow-voltage of 1.1V to enhance the power efficiency by 30% which runs two times speedier than 1,600Mbps and does at lower voltage than 1.2V of LPDDR3. With this product, it is available for users of smart devices to experience high quality functions and for full HD(High-Definition) display to be materialized smoothly. SK Hynix is leading the industry by providing the best mobile memory solution for the first time to the commercialized smartphone. Especially, primary worldwide smartphone manufacturers are expected to adopt LPDDR4 as a core memory solution to their premium products and besides smartphones with 4GB(Gigabytes) DRAM are forecast to increase from the latter half of this year.

Toshiba Enters into Definitive Agreement with SK Hynix on Joint Development of Nano Imprint Lithography

Toshiba announced that it has entered into a definitive agreement with SK hynix on joint development of Nano Imprint Lithography. Engineers from the two companies will start development of basic technologies for the process at Toshiba’s Yokohama Complex in Yokohama, Japan in April this year, targeting practical use in 2017. Toshiba has worked with several equipment and materials companies on NIL, integrating their technologies with Toshiba’s semiconductor manufacturing process. The newly announced joint development program with SK hynix accelerate progress towards practical use and will mitigate burden of Toshiba’s investment into NIL development. NIL is one of candidate technologies for advancing the migration to future generations of memory devices. Photolithography, the current mainstream process technology, uses a laser and photosensitive mask to etch circuits on a light-sensitive coating on semiconductor wafers. NIL transfers the circuit design directly, by impressing a patterned template onto the wafer. This has the potential to achieve finer designs. Toshiba will continue drive development of next generation lithography technology, such as NIL and extreme ultraviolet lithography, as a means to strengthen its memory business and the migration to future product generations.

 

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Industry Analysis

HXSCF

Industry Average

Valuation HXSCF Industry Range
Price/Earnings 7.8x
Price/Sales 1.9x
Price/Book 1.8x
Price/Cash Flow 7.5x
TEV/Sales 1.4x
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