Last ¥875.00 JPY
Change Today -8.00 / -0.91%
Volume 505.4K
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renesas electronics corp (6723) Snapshot

Open
¥885.00
Previous Close
¥883.00
Day High
¥885.00
Day Low
¥870.00
52 Week High
09/4/14 - ¥1,089
52 Week Low
05/19/14 - ¥653.00
Market Cap
1.5T
Average Volume 10 Days
696.4K
EPS TTM
¥34.71
Shares Outstanding
1.7B
EX-Date
03/27/07
P/E TM
25.2x
Dividend
--
Dividend Yield
--
Current Stock Chart for RENESAS ELECTRONICS CORP (6723)

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renesas electronics corp (6723) Details

Renesas Electronics Corporation researches, develops, designs, manufactures, sells, and services semiconductors worldwide. It offers microcontrollers and microprocessors; power devices, such as power MOSFETs, IGBTs, intelligent power devices, diodes, thyristors and triacs, and transistors; analog and mixed signal products, including power management, ICs/driver ICs, analog ICs for automotives, and interfaces, as well as ICs for leakage detection, audio, computing and peripherals, cameras, and graphic controllers. The company also provides general-purpose linear and logic analog ICs; RF devices; optoelectronics comprising photo couplers, solid state relays, fiberoptic devices, and lasers; LSIs for automotives, factory automation, and communications and mobile devices; memory products, including SRAM, EEPROM, DRAM, and TCAM; ASIC products comprising gate arrays, cell-based ICs, analog masters, mixed signal ASICs, customizable MCUs, and programmable XBridge; and USB 3.0 host controllers. Its products are used in various applications, such as automotive, connectivity, consumer, energy, human interface, industrial/building and home, medical and healthcare, mobile, motor control, PC and PC peripheral, power supply, and RF front end applications. Renesas Electronics Corporation was founded in 2002 and is headquartered in Tokyo, Japan.

27,201 Employees
Last Reported Date: 06/25/14
Founded in 2002

renesas electronics corp (6723) Top Compensated Officers

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renesas electronics corp (6723) Key Developments

Renesas Electronics Corporation Develops New Flash Memory Technology

Renesas Electronics Corporation announced that it has developed a new flash memory technology that achieves even faster read and rewrite speeds. The new technology is designed for on-chip flash memory microcontrollers (MCUs) using a 28-nanometer (nm) embedded Flash (eFlash) process technology. As a response to recent environmental issues, the regulations on car performance (CO2 emissions, fuel efficiency, and exhaust gasses) in countries around the world are becoming increasingly stricter. As a result, support for new engine control methods is required in the power train area. Furthermore, ADAS (Advanced Driving Assistant System) is now desired to create a safe, secure, and comfortable automotive experience. To respond to these market needs, further increases in performance, and even lower power consumption, are required in the automotive MCUs. As already announced, Renesas has been moving forward with the development of eFlash memory for MCUs that is based on the SG-MONOS structure, which has a proven track record in terms of high reliability, high speed, and low power. At the same time as moving from the 40 nm process to the 28 nm process, this new technology makes even larger memory capacities and even higher processing performance possible through Renesas' superlative circuit technologies. Key features of Renesas' newly-developed flash memory technologies: (1) Technology that realizes both high-speed readout operations and high reliability - as the feature size of memory cells reduces, the cell current decreases. Although it is possible to assure the sufficient read current by overdriving the word line (memory cell selection gate) voltage, there is concern that the gate oxide reliability could be adversely affected at high temperature. By utilizing the fact that the temperature dependence of memory cell current and the peripheral transistor reliability are in an inverse relationship, a negative temperature dependence has been added to the word line overdrive voltage to improve the reliability lifetime of the peripheral transistors by a factor of over 10 compared to the simple word line overdrive approach. This has resulted in achieving an increase in the random read speed from 160 to 200 megahertz (MHz) as well as high reliability; (2) Technology that mitigates the erase voltage stress - Renesas has newly developed a technology that mitigates the erase voltage stress to the interlayer dielectric at high temperature by monitoring the erase speed and controlling the erase operation so that the maximum erase voltage is suppressed at high erase speed condition. This achieves high reliability against high-voltage stress during erase operations, while the dielectric films among high-voltage metal lines and memory cells become thinner associated with the narrower process node; (3) Technology that increases write speeds - Renesas has newly developed a high-speed write technology that reduces the write pulse duration by applying the negative back bias to the memory cell and enables writing to multiple flash macros in parallel. As a result, Renesas achieved a write throughout of 2.0 MB per second; (4) Technology that reduces power supply noise and EMI - since it is expected that the rewrite cycle counts of eFlash memory in the field will increase in the future due to, for example, OTA (over the air) program updates, it is necessary to minimize the influence caused by power supply noise and EMI (Electric Magnetic Interference) on overall system operations during rewrite operations. Therefore, Renesas has now developed a technology that significantly reduces these induced noise by adopting SSCG (spread-spectrum clock generation) for the drive clock of the charge pumps that generates the high voltage used for flash memory rewrite operations. Renesas has now prototyped both a 4 MB program storage eFlash memory and a 64 KB data storage eFlash memory using a 28 nm eFlash memory process and has achieved the highest readout operation speed of 6.4 GB/s at over 200 MHz. Although previously, Renesas had verified read operations at 160 MHz in a prototype chip fabricated in the 40 nm process, Renesas has now verified 25% characteristics improvements due to this new technology. Also, in order to meet the requirement of the higher write performance in accordance with the increase in the size of the program storage eFlash memory, Renesas has achieved the highest write throughput of 2.0 MB/s. This corresponds to almost twice as high performance characteristics as the conventional Renesas products fabricated in the 40 nm generation process technology. Renesas expects to contribute significantly to achieving high-capacity automotive flash memory that provides both high performance and high reliability by using those eFlash memory circuit technologies. Renesas announced the new technologies on February 24 at the International Solid-State Circuits Conference (ISSCC) held in San Francisco from February 22, 2015 to February 26, 2015.

Renesas Electronics Corporation Develops New Low-Power 2.5 GHz RF Transceiver Technology Compatible with Bluetooth® Low Energy Standard

Renesas Electronics Corporation announced that it has developed a new low-power 2.5 GHz RF transceiver technology that is compatible with the Bluetooth® Low Energy (BLE) standard, and will be the core technology for short-distance wireless communication in wearable devices and other elements of the Internet of Things (IoT). While achieving the lowest current drain by aggressive improvements to the circuit technology, Renesas also succeeded in incorporating external components into the chip itself. This results in approximately one-third reduction in the number of passive components previously required and allows this technology to be chip mounted in user application systems for miniaturization and reduced costs. BLE is widely used in battery-powered equipment such as wearable devices and even lower current drain is now strongly desired for longer battery life. It is also necessary to reduce the number of external components to make this equipment even more compact and even lighter. This newly-developed Renesas RF transceiver technology is based on a low-power RF architecture acquired through a collaboration with the imec and Holst Centre and includes both newly innovated Renesas' transceiver filters and a new calibration circuit. By integrating the DC/DC converter, Renesas achieved the lowest current drain levels: 2.1 mA during reception and 3.6 mA during transmission. Key features of the newly-developed RF transceiver technology: (1) built-in impedance matching network and transmit/receive switch with no degradation of device characteristics - this device integrates in the IC itself the transmit/receive switch that was previously implemented with external components and, since this can cause degradation of the receiving signal noise level and transmission power characteristics, Renesas adopted a newly-developed parallel structure switching circuit to minimize such degradation; (2) on-chip reuse transmission and reception filters reusing impedance matching network - since the impedance matching network and transmission and reception filters use inductors and capacitors, integrating these passive devices on the IC chip increases the chip area significantly. In this newly-developed circuit structure, however, it is possible to reuse the devices used for the impedance matching network. This made it possible to integrate the filters on the chip using a small number of devices. During transmission, the impedance matching network operates as an HD3 spurious signal rejection filter, and during reception, it operates as an image frequency rejection filter, such as configurable operation; (3) improved HD2 spurious calibration technology - Renesas' newly-developed spurious calibration technology eliminates HD2 spurious signals using a calibration circuit with improved spurious detection block. This also makes the design more resistant to manufacturing variations. The RF transceiver was designed using a 40 nanometer (nm) process technology and supports BLE, which is the standard most widely used in healthcare and fitness products as well as wearable ones. Renesas achieved a RF core area of 1.1 mm², by switching to a reusable device structure in the transmission and reception filters, while integrating the transmission and reception switch, the impedance matching network, and the transmission and reception filters on the chip. The minimum reception sensitivity is -94 dBm (the standard requires -70 dBm or lower) and the image frequency interference is -20 dB or higher (the standard requires -30 dBm or higher). The newly-developed RF transceiver technology will not only lead to lower power equipment, but also, due to the reduction of external components related to the antenna, contributes to system miniaturization, cost reduction. These will be the keys for providing 'Easy-to-Use' BLE user application systems since component adjustment no longer becomes necessary. Renesas announced this technology on February 24, 2015 at the International Solid-State Circuits Conference (ISSCC) held in San Francisco held from February 22, 2015 to February 26, 2015.

Renesas Electronics America Introduces 32-Bit Automotive Microcontrollers Specialized for Instrument Clusters in Entry Level to Mid-Range Cars

Renesas Electronics America announced the RH850/D1x Series of 32-bit automotive microcontrollers (MCUs) specialized for instrument clusters that deliver easy-to-access information to support a safer and rich driving experience. The connected car is generating an increasing amount of information from the automotive networks, cameras and multimedia systems. This trend is driving a strong need to transmit these large amounts of information to the driver in an easy-to-understand and easy-to-read manner, which often takes a graphical format. As graphics become widely used in instrument clusters, color LCDs are going to be widely adopted to increase both the expressive power and legibility, improving the communications with the driver to provide appropriate information at the appropriate time with appropriate displays through a combination of gauges, graphics, and head-up displays. As the global MCU supplier for instrument clusters, Renesas is leveraging its automotive experience to support the whole range of instrument cluster systems, from the combination of gauge control and LCD display for the entry and mid-range cars, to the full graphics required for high-end luxury cars. Designed for entry class and mid-range vehicle systems, the RH850/D1x Series integrates gauge control, graphics display and functional safety in one chip, while reducing the system BOM cost and scalable development offers, and helps realize instrument cluster systems with highly reliable color graphics LCD. Key Features of the RH850/D1x MCUs: Reduced system BOM cost: The RH850/D1x MCUs incorporate a large-capacity RAM (up to 3.5MB) and Renesas’ newly developed high-functionality graphics engine supported by a highly efficient “Renesas Graphics Library”. These contribute to reducing the amount of RAM usage and realize high-definition LCD display without external high-speed DRAMs. In addition, by eliminating these external high-speed DRAMs, systems can be designed on low-cost four-layer printed circuit boards. Scalable development offerings: By combining the common basic functionality, including gauge control and in-car network functions, Renesas features 22 products in seven groups that offer varieties of graphics and cost options. This rich lineup provides enhanced software reusability and scalable solution to enable common platforms for instrument cluster systems. These scalable development offerings shorten software development periods and reduce both development and maintenance costs. Intelligent development: By incorporating a high-functionality graphics engine, the RH850/D1x enables the creation of high-precision animations on a large display to address the requirement of mid-range cars, and also realizes both the expressive power and visibility for head-up displays. With the RH850/D1x graphics engine supporting OpenVG 1.1 standard and HMI development tools supporting API standard, the development period can be shortened even further. Support for head-up displays: The RH850/D1x MCUs include a function that automatically corrects video output in accordance with car design such as windshields. The output video data can be warped to fit for an arbitrary shape without frame delay. This enables head-up displays to be added to the instrument clusters. Functional safety: To secure functional safety for the instrument cluster systems, the RH850/D1x MCUs include functions for detecting system malfunctions and monitoring functions that monitor and verify, at all times, that important information, such as warnings and the gear position, is being informed correctly, to secure safety.

 

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Valuation 6723 Industry Range
Price/Earnings 25.2x
Price/Sales 1.8x
Price/Book 5.2x
Price/Cash Flow 25.3x
TEV/Sales 1.1x
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