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faraday technology corp (3035) Details

Faraday Technology Corporation operates as a fabless ASIC/SoC and silicon intellectual property (IP) provider worldwide. The company offers SoC design services and SoC evaluation platforms; and ASIC services. It also provides IP products, including library and memory compilers, processor cores, interface IP products, peripheral IP products, analog IP products, and ARM tools. The company was founded in 1993 and is headquartered in Hsinchu City, Taiwan.

Founded in 1993

faraday technology corp (3035) Top Compensated Officers

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faraday technology corp (3035) Key Developments

Faraday Technology Corp. Announces Silicon-Proven MIPI Subsystem to Enable Faster Time-to-Market

Faraday Technology Corp. announced the availability of its MIPI subsystem of Camera Serial Interface (CSI-2) and Low-Voltage Differential Signaling (LVDS) in UMC's 40nm LP process. The system-level solution perfectly meets both the requirements of quality and cost within the competitive schedule for applications of IoT, mobiles, and cameras, such as wearable and mobile devices, Digital Still Camera (DSC), surveillance, automotive and medical devices. Faraday's MIPI subsystem includes Co-IP (Composite IP), the prototype, and system loopback testing. The silicon-proven Co-IP integrates combo PHY IP, MIPI CSI-2 RX controller, and LDVS controller. It is configurable for various sensor interfaces of MIPI, LVDS, sub-LVDS, and HiSPi, supporting the transmission speed up to 1Gbps for each of 4 data lanes. The prototype (combo PHY EVB and controller FPGA code) assists customers in creating their platforms and bringingsystem-level development and verification forward to the pre-silicon stage. In addition, the at-speed system loopback testing ensures mass production quality at a lower cost.

Faraday Technology Corporation and United Microelectronics Corporation Announces Complete Set of Low Power Consumption Fundamental Ips for UMC's 55nm Low Power (Lp) Embedded Flash Process

Faraday Technology Corporation and United Microelectronics Corporation announced the availability of a complete set of low power consumption fundamental IPs developed for UMC's 55nm Low Power (LP) embedded Flash process. These IPs are designed to simultaneously meet both low-power and high-density requirements to satisfy the demands of a broad range of applications including IoT (Internet of Things) and wearable products. Low-power is prioritized for always-on devices in order to extend battery life. To fulfill the requirement, Faraday's memory compilers greatly reduce power consumption in the standby mode by up to 70% through optimization of the low leakage memory periphery. The robust I/O cells are available for both digital and analog interfaces, with a high voltage I/O cell option available that is especially compatible with a 5.0V interface. These IO cells are designed by using HVT core device to reduce leakage power. Furthermore, the IP suite also includes a new low-power USB 2.0 OTG PHY with HVT core device, which significantly reduces power consumption in the idle mode by up to 65% over traditional USB 2.0 OTG PHY.

Faraday Technology Corp. Reports Consolidated Earnings Results for the Fourth Quarter Ended December 31, 2014

Faraday Technology Corp. reported consolidated earnings results for the fourth quarter ended December 31, 2014. For the quarter, the company reported revenue was TWD 1,462 million compared to TWD 1,590 million a year ago. Operating income was TWD 158 million compared to TWD 265 million a year ago. Net Income (attributable to parent) was TWD 170 million compared to TWD 204 million a year ago. EPS was TWD 0.41 per share compared to TWD 0.51 per share a year ago.

 

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3035

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Valuation 3035 Industry Range
Price/Earnings 26.9x
Price/Sales 3.1x
Price/Book 2.6x
Price/Cash Flow 26.7x
TEV/Sales 2.4x
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