January 25, 2015 5:28 AM ET

Electronic Equipment, Instruments and Components

Company Overview of Efficient Power Conversion Corporation

Company Overview

Efficient Power Conversion Corporation provides enhancement mode gallium nitride based power management devices. The company provides eGaN FETs, which provide designers employing various power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter to attain performance enhancements compared with silicon power MOSFETs; eGaN Drivers that allow realization of the disruptive gains in high frequency and low duty cycle power conversion; and demo and development boards. Its products are used in various applications, such as server and computer DC-DC converters, power over Ethernet, isolated brick converters, point-...

909 North Sepulveda Boulevard

Suite 230

El Segundo, CA 90245

United States

Founded in 2007

Phone:

310-615-0280

Fax:

310-615-0284

Key Executives for Efficient Power Conversion Corporation

Co-founder and Chief Executive Officer
Age: 59
Director of Applications Engineering
Director of Global Field Applications Engineering
Director of Worldwide Regional Marketing
Vice President of Sales - Asia
Compensation as of Fiscal Year 2014.

Efficient Power Conversion Corporation Key Developments

Efficient Power Conversion Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

EPC announced the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting. The EPC2027 has a voltage rating of 450 V and maximum RDS(on) of 400 m¦ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2027 measures 1.95 mm x 1.95 mm for increased power density. As off-line adapters and inverters increasingly push toward smaller size, less weight, and higher power density, the demand for corresponding higher voltage and faster switching speeds is increasing. The 450 V EPC2027 allows power designers to increase the switching frequency of their off-line power conversion systems for increased efficiency and smaller footprint. Price and Availability of the EPC2027 eGaN FETs are priced for 1K units at $5.81 each. The EPC9044 development boards are priced at $137.75 each.

Efficient Power Conversion Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enables over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A Output

Efficient Power Conversion Corporation announced the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN(R) power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion. Each device within the EPC2101 half-bridge component has a voltage rating of 60 V. The upper FET has a typical RDS(on) of 8.4 m, and the lower FET has a typical RDS(on) of 2 m. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high V(IN) /V(OUT) ratio. The EPC2101 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC9037 is 2" x 1.5" and contains one EPC2101 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

Efficient Power Conversion Corporation, Inc. Introduces EPC2105, 80 V Enhancement-Mode Monolithic GaN Transistor Half Bridge

EPC announced the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN(R) power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads. Each device within the EPC2105 half-bridge component has a voltage rating of 80 V. The upper FET has a typical RDS(on) of 10 m, and the lower FET has a typical RDS(on) of 2.3 m. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high V(IN) /V(OUT) ratio. The EPC2105 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC9041 is 2" x 1.5" and contains one EPC2105 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation. The EPC2105 monolithic half-bridge price for 1K units is $7.17 each. The EPC9041 development boards are priced at $137.75 each.

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