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May 25, 2015 8:22 AM ET

Electronic Equipment, Instruments and Components

Company Overview of Efficient Power Conversion Corporation

Company Overview

Efficient Power Conversion Corporation provides enhancement mode gallium nitride based power management devices. The company provides eGaN FETs, which provide designers employing various power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter to attain performance enhancements compared with silicon power MOSFETs; eGaN Drivers that allow realization of the disruptive gains in high frequency and low duty cycle power conversion; and demo and development boards. Its products are used in various applications, such as server and computer DC-DC converters, power over Ethernet, isolated brick converters, point-...

909 North Sepulveda Boulevard

Suite 230

El Segundo, CA 90245

United States

Founded in 2007





Key Executives for Efficient Power Conversion Corporation

Co-founder and Chief Executive Officer
Age: 59
Director of Applications Engineering
Director of Global Field Applications Engineering
Director of Worldwide Regional Marketing
Vice President of Sales - Asia
Compensation as of Fiscal Year 2014.

Efficient Power Conversion Corporation Key Developments

Integrated Device Technology, Inc. and Efficient Power Conversion Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

Integrated Device Technology, Inc. announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC's eGaN® technology with leading IDT solutions. The three areas in which the companies are collaborating: Communications and computing infrastructure--GaN's low capacitance and zero QRR coupled with the low inductance of its chip-scale package result in high efficiency at high frequency. This increase in efficiency will combine with IDT's precise commutation and system expertise to drive up power density and deliver significant competitive advantage to communications and computing infrastructures. Wireless power - The highly resonant wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz, where the high speed, low-loss switching ability of GaN drives efficiency to the levels of wired solutions. Combining the GaN expertise of EPC and precision solutions of IDT will deliver a highly efficient, cost competitive solution that will drive widespread adoption of wireless power. Radio frequency (RF) - The two companies will explore collaboration to create a portfolio of RF products for the communications infrastructure market.

Efficient Power Conversion Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for A 48 V to 12 V Point of Load Converter at 22 A Output

Efficient Power Conversion announced the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2104 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC2104 is ideal for high frequency DC-DC conversion and motor drive applications. The EPC9040 is 2” x 2” and contains one EPC2104 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation. The EPC2104 monolithic half-bridge price for 1K units is $8.31 each. The EPC9040 development boards are priced at $137.75 each.

Efficient Power Conversion Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

Efficient Power Conversion Corporation announced the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of 'Relaxed Pitch' devices, the EPC2029 80 V, 31 A eGaN FET featucres a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint. Compared to a silicon power MOSFET with similar on-resistance, the EPC2029 is much smaller and has many times superior switching performance. The EPC2029 is ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio. To simplify the evaluation process of this latest high performance eGaN FET, the EPC9046 development board is available to support easy “in circuit” performance evaluation of the EPC2029. The board is a half-bridge topology with onboard gate drives, featuring the EPC2029 eGaN power transistor. The board is 2” x 2” and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. It contains all critical components and is laid out for optimal switching performance with additional area to add buck output filter components. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. Pricing for the EPC2029 power transistors at 1K units is $6.03 each and pricing for the EPC9046 development board is $137.75. Both products are available for immediate delivery from Digi-Key.

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