Electronic Equipment, Instruments and Components
Company Overview of Efficient Power Conversion Corporation
Efficient Power Conversion Corporation provides enhancement mode gallium nitride based power management devices. The company provides eGaN FETs, which provide designers employing various power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter to attain performance enhancements compared with silicon power MOSFETs; eGaN Drivers that allow realization of the disruptive gains in high frequency and low duty cycle power conversion; and demo and development boards. Its products are used in various applications, such as server and computer DC-DC converters, power over Ethernet, isolated brick converters, point-...
909 North Sepulveda Boulevard
El Segundo, CA 90245
Founded in 2007
Key Executives for Efficient Power Conversion Corporation
Co-founder and Chief Executive Officer
Director of Applications Engineering
Director of Global Field Applications Engineering
Director of Worldwide Regional Marketing
Vice President of Sales - Asia
Compensation as of Fiscal Year 2015.
Efficient Power Conversion Corporation Key Developments
Efficient Power Conversion Corporation Expands eGaN® Integrated Circuit Family with Dual Enhancement-Mode 120 Volt, 60 Milliohm Power Transistor Ideal for Wireless Power Transfer
Sep 11 15
Efficient Power Conversion Corporation introduced the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits. The EPC2110 is a dual (common-source) eGaN FET configuration in a tiny 1.35 mm x 1.35 mm, 120 VDS, 20 A device with a maximum RDS(on) of 60 milliohms with 5 V applied to the gate. This GaN integrated circuit delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in avery small package. Compared to a silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance. Circuit applications that benefit from this eGaN IC’s performance include ultra high frequency DC-DC conversion, synchronous rectification, class-D audio amplifiers, and most notably, wireless power transfer.
Efficient Power Conversion Corporation Launches EPC2039 Power Transistor
Aug 13 15
Efficient Power Conversion Corporation (EPC) announced the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8 A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in avery small package. The EPC2039 has many uses but is primarily designed for high frequency power conversion applications, such as synchronous rectification, Class-D audio, high voltage buck converters, wireless charging, and pulsed power (LiDAR) applications. Emerging LiDAR applications include driverless vehicles and augmented reality.
Efficient Power Conversion Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating over 2 Mhz, Ideal for Class-D Audio
Aug 4 15
Efficient Power Conversion announced an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2106  half-bridge component has a voltage rating of 100 V with a typical RDS(on) of 55 m?, output capacitance less than 600 pF, zero reverse recovery (QRR), and a maximum pulsed drain current of 18 A. The low on-resistance and capacitance of GaN enables high efficiency and significantly reduces distortion in Class-D systems. The EPC2106  comes in an extremely small 1.35 mm x 1.35 mm chip-scale package for improved switching speed and thermal performance for increased power density.
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