August 25, 2016 12:44 PM ET

Semiconductors and Semiconductor Equipment

Company Overview of Everspin Technologies, Inc.

Company Overview

Everspin Technologies, Inc. designs, manufactures, and supplies discrete and embedded magnetoresistive RAM (MRAM) and spin-torque MRAM (ST-MRAM) products to customers in the United States and internationally. The company provides its products for applications, including aerospace, automotive, enterprise SSD, factory automation, Internet of things, smart energy, professional audio, medical, RAID, and industrial computing. It serves customers through a network of sales representatives and distributors in the United States, Canada, Mexico, the Asia Pacific, South America, Japan, Europe, the Middle East, and Africa. The company was founded in 2008 and is based in Chandler, Arizona with sales off...

1347 North Alma School Road

Suite 220

Chandler, AZ 85224

United States

Founded in 2008

Phone:

480-347-1111

Fax:

480-347-1175

Key Executives for Everspin Technologies, Inc.

Chief Executive Officer and President
Chief Financial Officer
Age: 56
Vice President of Business Development and Operations
Vice President of Technology, Research & Development
Vice President of Worldwide Sales and Marketing
Compensation as of Fiscal Year 2016.

Everspin Technologies, Inc. Key Developments

Everspin and Aupera Announce the Launch of the First M.2 Storage Module, the Aup-AXL-M128

Everspin Technologies, Inc. and Aupera Technologies Inc. announced the launch of the first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance. Aupera Technologies has also launched its new generation All Flash Array system, Aup-Litesaber-V2000, uniquely built on Aupera’s proprietary Distributed Computing and Storage technology optimized for video data storage, processing and analytic application. Everspin’s ST-MRAM technology combines high performance, non-volatile DDR3 RAM speed with very high endurance for enterprise storage and server markets. Everspin offers the world’s first commercially available perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM, giving designers of high performance storage systems the ability to achieve ultra-low latency, increase reliability with high cycling endurance, and protect data in the event of power loss.

Everspin Technologies Readies First 256Mb Perpendicular Spin Torque MRAM for Production and is Now Sampling Customers

Everspin Technologies strengthend its position in MRAM by shipping the product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market. Everspin has now successfully developed its third generation MRAM technology and is preparing for production of its next ST-MRAM product offering improved performance, higher endurance, lower power, and better scalability than previous products. Everspin’s latest ST-MRAM is offered with a proven DDR3 interface compatible with DDR3 controllers used in FPGAs, ASIC designs and currently available in SSD and RAID controller products. Customers needing both non-volatility and DRAM speed can use Everspin’s ST-MRAM to improve system reliability and simplify system designs. Everspin’s ST-MRAM will eliminate the need for batteries or supercapacitors that are required in today’s designs to protect critical data in case of unexpected power-down occurrences. Storage applications such as enterprise-class SSDs, RAID systems, storage appliances and servers will benefit from the data persistence and high cycle endurance of Everspin’s ST-MRAM products. Everspin’s ST-MRAM will allow hot data to be written faster than any other non-volatile memory on the market while still ensuring data integrity. To enable customer designs, Everspin has built an ecosystem which includes DDR3 memory controller and SSD controller IP from multiple vendors, as well as FPGA-based tools for test and validation of the 256Mb DDR3 pMTJ ST-MRAM. Everspin will be showcasing the 256Mb DDR3 pMTJ ST-MRAM at the Flash Memory Summit in Santa Clara, CA from 8/9 through 8/11. The demonstrations at the show will include a PCIe NVMe SSD with write performance at an unprecedented 1.5 Million IOPS, made possible by Everspin’s newest ST-MRAM. The release of pMTJ-based ST-MRAM products will enable Everspin to provide solutions for the multi-billion dollar market requiring persistent memory. Storage and server OEMs have already been evaluating Everspin’s ST-MRAM products and are planning to use these higher density devices. Everspin will also offer a 1 Gigabit DDR4 ST-MRAM product that is in development now, based on a scaled down version of 256Mb pMTJ. Everspin’s newest ST-MRAM using pMTJ delivers the following advantages: Supports over 100,000 times faster write speeds than NAND flash; Persistent data with retention that meets the requirements of many enterprise and cloud computing applications; DDR3 interface compatibility with symmetrical read and write speed; Provides the highest endurance of currently available non-volatile memories; No wear leveling required; Compatible with standard CMOS and is scalable to Gigabit+ densities.

Everspin Releases Highest Density MRAM Products

Everspin Technologies announced that it is shipping 256Mb ST-MRAM samples to global customers, enabling new product solutions using a true MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record for the highest density commercial MRAM currently available in the market. Everspin, having held the previous record, has consistently led the industry, delivering the highest density MRAM products. The company also plans further density increases and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later 2016. Everspin's MRAM has demonstrated interface speeds comparable to DRAM; the new 256Mb and 1Gb ST-MRAM products will continue this performance with DDR3 and DDR4 interfaces, respectively. The release of pMTJ-based ST-MRAM products will enable Everspin to provide solutions for the multi-billion dollar market requiring persistent memory. Storage and server OEMs have already been evaluating Everspin's ST-MRAM products and are planning to utilize these higher density devices. Everspin will continue to scale to lower geometries, and in turn, higher densities beyond 1Gb in the years to come. Everspin's ST-MRAM delivers the advantages: Supports 100,000 times faster write speeds than NAND flash; operates on the DDR3/DDR4 DRAM memory interface; requires no wear leveling; provides the highest endurance of currently available non-volatile memories; delivers low power operation; and enables instant on/off functionality.

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