September 26, 2016 2:26 PM ET

Semiconductors and Semiconductor Equipment

Company Overview of Toshiba America Electronic Components, Inc.

Company Overview

Toshiba America Electronic Components, Inc. designs, develops, manufactures, and markets electronic components, semiconductors, and storage products in North America. The company provides products in the categories of amorphous, analog and peripheral integrated circuits (ICs), processors, battery charger ICs, custom SoC/ASIC, diodes, electron tubes, imaging solutions, linear ICs, logic ICs, materials, memory, optical coupled isolation amplifiers with delta-sigma AD converters, and motor controllers. It also offers products in the categories of microprocessors, microwave, mobile peripheral ICs, motor controller and driver ICs, optical semiconductor devices, radio frequency devices, storage pr...

9740 Irvine Boulevard

Suite D700

Irvine, CA 92618

United States

Founded in 1989





Key Executives for Toshiba America Electronic Components, Inc.

Chief Executive Officer and President
Senior Vice President and Technology Executive of System Lsi Group
Vice President of Business Development - Discrete Business Unit
Vice President of Display Devices & Components Business Unit
Senior Vice President of Memory Marketing
Compensation as of Fiscal Year 2016.

Toshiba America Electronic Components, Inc. Key Developments

Toshiba America Electronic Components, Inc Expands 24nm SLC NAND Flash Lineup to Address Industrial Applications

Toshiba America Electronic Components, Inc. has expanded its family of 24nm single-level cell (SLC) NAND flash memory solutions. The new 16 gigabit (Gb) BENAND is housed in an industry-standard 48-pin TSOP package, and offers a combination of high read/write performance, effective write endurance (using 8-bit BCH error correction code), and extended temperature operation. This makes it suitable for a wide variety of commercial and industrial applications. The new addition rounds out the company's broad SLC product lineup, allowing designers to take advantage of the price/performance of advanced 24nm NAND flash SLC technology at densities from 1Gb to 128Gb. Based on a 4x4Gb die, 16Gb BENAND operates from a power supply of 2.7V to 3.3V with a temperature range of -40°C to 85°C. Many industrial applications have a long life expectancy. The company designed BENAND with this in mind. With the ability to replace older generations of discrete SLC NAND, BENAND extends the product life of everything from telecom applications and LCD TVs to robots and printers – while also potentially reducing BOM costs. the company's 24nm BENAND requires no ECC from the host controller. This enables it to be used with host controllers that do not have 8-bit ECC capability. Many legacy designs still use older processors that do not have 8-bit ECC capability, making BENAND a viable option for companies looking to design in a cutting-edge NAND solution with existing hardware. To ensure easy migration, BENAND's features such as page/block size, spare area size, commands, interface and package remain the same as legacy 4xnm SLC NAND.

Toshiba America Electronic Components, Inc. Introduces the OCZ VX500 SATA SSD Series

Toshiba America Electronic Components, Inc. announced the launch of the OCZ VX500 SATA solid state drive (SSD) series. Aimed at mainstream desktop and notebook users looking to migrate away from primary hard disc drive (HDD) usage, VX500 SSDs feature superior endurance ratings1 and provide a faster. Backed by OEM-level testing that provides validated reliability and built with the latest Toshiba MLC NAND flash, the Toshiba OCZ VX500 SSD series delivers endurance ratings of 74 to 592 terabytes written (TBW)3, making it suitable for write-intensive applications such as content creation, revolving media/game storage, or as a scratch disk. The Toshiba OCZ VX500 series is designed to thrive in mixed workload environments representative of mainstream users who need increased performance4 to take their everyday computing to the next level. With sequential read/write speeds of up to 550 MB/s and 515 MB/s, and random read/write performance of up to 92,000 and 65,000 4KiB5 input/output operations per second (IOPS)6, VX500 SSDs can significantly boost system productivity compared to HDD storage. Users can also count on enhanced durability and power consumption over their hard drives, as well as quality lightweight housing weighing in at only 54g. The OCZ VX500 SATA SSD series will be available in four different capacities ranging from 128GB to 1024GB8 and will be backed by a 5-year Advanced Warranty Program9, created to provide reliable customer service and mitigates the frustration surrounding warranty and support claims. Additionally, each VX500 SSD comes bundled with Acronis True Image 10 cloning software for users to easily transfer their data to the new SSD and enjoy a smooth upgrade experience.

Toshiba America Electronic Components, Inc. Introduces New Automotive N-ch Power MOSFET

Toshiba America Electronic Components, Inc. (TAEC) announced the expansion of its lineup of automotive N-channel power MOSFETs with the addition of a new 100V, 160A device: the TK160F10N1L. Offering low on-resistance and a low voltage drive as well as a narrowed gate threshold voltage, the TK160F10N1L keeps current balances in parallel operation in large-current applications such as automotive equipment, motor drives, DC-DC converters and power supplies. As the popularity of electric automotive power systems increases, so too does the need for better power efficiencies. In order to accommodate the increased power requirements that come along with systems such as those found in hybrid electric vehicles (HEVs), electronic power steering systems (EPSs), electronic braking, 48V systems, integrated start/stop systems (ISS/ISGs), inverters and more, automotive suppliers are looking for low on-resistance, thermally efficient packaging and high overall switching performance from their power MOSFET suppliers. Toshiba's new TK160F10N1L meets all of these requirements. The TK160F10N1L is fabricated using Toshiba's advanced U-MOS-VIII-H process node with a new package that incorporates copper connector technology. This technology improves current handling capabilities, enhances thermal properties and lowers package resistance, while also eliminating bond wires for increased reliability. This results in a TO-220SM(W) package device with a maximum on-resistance (RDS(ON)) of 2.4mO (@ VGS=10V), a low voltage drive (VGS=6V) and a narrowed gate threshold voltage of 2.5 to 3.5V. Highly efficient, low heat generating operation makes the TK160F10N1L suitable for automotive designs. The TK160F10N1L's U-MOSVIII-H structure provides further design benefits by handling spike noise or oscillation during switching operation. Key Features: Low on-resistance: RDS(ON)=2.0mO (typ.) (VGS=10V); Small gate threshold voltage: Vth=2.5 to 3.5V (narrow: 1V range); Low channel-to-case thermal resistance: Rth(ch-c)=0.4°C/W (max); High channel temperature rating: Tch=175°C; Low switching noise; and AEC-Q101 qualified.

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