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October 09, 2015 11:52 PM ET

Semiconductors and Semiconductor Equipment

Company Overview of Toshiba America Electronic Components, Inc.

Company Overview

Toshiba America Electronic Components, Inc. designs, develops, manufactures, and markets electronic components, semiconductors, and storage products in North America. The company provides products in the categories of amorphous, analog and peripheral integrated circuits (ICs), processors, battery charger ICs, custom SoC/ASIC, diodes, electron tubes, imaging solutions, linear ICs, logic ICs, materials, memory, and motor controllers. It also offers products in the categories of microprocessors, microwave, mobile peripheral ICs, motor controller and driver ICs, optical semiconductor devices, radio frequency devices, storage products, wireless data transfer ICs, and transistors. The company offe...

9740 Irvine Boulevard

Suite D700

Irvine, CA 92618

United States

Founded in 1989





Key Executives for Toshiba America Electronic Components, Inc.

Chief Executive Officer and President
Senior Vice President and Technology Executive of System Lsi Group
Vice President of Business Development - Discrete Business Unit
Vice President of Display Devices & Components Business Unit
Senior Vice President of Memory Marketing
Compensation as of Fiscal Year 2015.

Toshiba America Electronic Components, Inc. Key Developments

Toshiba America Electronic Components, Inc. Launches Two New Compact MOSFETs, SSM3K35CTC and SSM3J35CTC

Toshiba America Electronic Components, Inc. announced the launch of two new compact MOSFETs - the SSM3K35CTC and SSM3J35CTC. Housed in a newly developed compact package (CST3C) the SSM3K35CTC and SSM3J35CTC are suitable for controlling power sources or data signals in mobile devices such as smart phones and wearables. When it comes to the overall footprint, Toshiba's CST3C package exceeds industry standards. In fact, the CST3C package is just one-third the size of the industry standard SOT-723 package. This makes Toshiba's new MOSFETs suitable for high density mounting, and gives them the ability to achieve lower on-resistance when compared with products with a standard SOT-723 package. Features of the SSM3K35CTC and SSM3J35CTC include: New compact package CST3C (0.8 --0.6 mm); Controllable with a gate voltage of 1.2 V; Low drain-source on-resistance: SSM3K35CTC: RDS(ON)=2.4 O (typ.) VGS=1.2 V and SSM3J35CTC: RDS(ON)=3.2 O (typ.) VGS= -1.2 V.

Toshiba America Electronic Components, Inc. Introduces First CMOS Image Sensor to Enable Iris Recognition for Improved Security on Mobile Devices

Toshiba America Electronic Components, Inc. introduced its first CMOS image sensor to enable iris recognition for improved security on mobile devices. The 2.1-megapixel (MP) T4KE1 captures images for recognition with higher sensitivity than conventional CMOS image sensors by omitting the usual color filter in the pixel structure, which increases sensitivity in the near-infrared (NIR) spectrum. The T4KE1 features an optical size of 1/7.3 inch and pixel pitch of 1.12 micrometer BSI. Image output is 60 frames per second (fps) at 1,080p (100fps at VGA). Its MIPI CSI-2 serial interface, widely used in mobile devices, facilitates the sensor's integration into end products, and a picture flipping function allows output images to be easily flipped both horizontally and vertically. Toshiba has also designed, and provides with the T4KE1, a 5.20mm(x) x 6.00mm(y) x 4.06mm(z) reference camera module, enabling customers to evaluate use of the sensor in their mobile products. Included with the modules are design information and technical support to help shorten development turnaround time and contribute to creation of thinner, smaller mobile devices. Availability: Samples of the T4KE1 CMOS image sensor are available now. Mass production is set to begin in December 2015.

Toshiba America Electronic Components, Inc. Adds Four New Products to its TL1L4 Series of Gallium Nitride-On-Silicon (GaN-on-Si) High Power White LEDs

Toshiba America Electronic Components, Inc. announced that it has added four new products to its TL1L4 series of Gallium Nitride-on-silicon (GaN-on-Si) high power white LEDs. The TL1L4-DW0, TL1L4-NT0, TL1L4-NW0, and TL1L4-WH0 can contribute to improving the luminous efficacy and lowering the power consumption of LED lighting. The new TL1L4 series (4A5B type) achieves a high luminous efficacy of 165lm/W(min.) under Ta=25 degrees C, and is small in size, making the products appropriate for use in lighting applications including street lights, floodlights, high/low bay lights, base lights and down lights. The four new LEDs have correlated color temperatures (CCT) of 6500K/5700K/5000K/4000K, with a color rendering index of Ra70. The new additions to the TL1L4 series make it possible to meet the market requirements for lighting fixture efficacy of over 110lm/W, and can contribute to improving luminous efficacy and lowering power consumption in LED lighting applications. The TL1L4 series utilizes cost-effective GaN-on-Si wafer technology to create LEDs optimized for both output and power efficiency. The devices are housed in a compact 3.5 x 3.5mm lens package and rated to support an absolute maximum forward current of 1.5A max at TaF=350mA that simulate real-life operating conditions.

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