Semiconductors and Semiconductor Equipment
Company Overview of X-FAB Semiconductor Foundries AG
X-FAB Semiconductor Foundries AG operates as a foundry for analog/mixed-signal semiconductor applications. The company manufactures silicon wafers for mixed-signal integrated circuits. It manages product development flow and supply chain for its customer’s semiconductor products. The company offers technical support, online support, technical documentation, design support, prototyping and manufacturing support, outsourcing, and third party services. It caters to automotive, consumer, medical, and industrial sectors. The company was founded in 1999 and is based in Erfurt, Germany. It has manufacturing sites in Germany, Malaysia, and the United States. X-FAB Semiconductor Foundries AG operates...
Founded in 1999
Key Executives for X-FAB Semiconductor Foundries AG
Chief Executive Officer and Director
Chief Technology Officer and Director of Technology
Compensation as of Fiscal Year 2016.
X-FAB Semiconductor Foundries AG Key Developments
X-FAB and Exagan Partner to Develop Robust Production Process for High-Volume GaN-On-Silicon Devices on 200mm Wafers
May 18 15
X-FAB Silicon Foundries and Exagan have entered into a joint development agreement to industrialize Exagan’s GaN-on-silicon technology, begin producing high-speed power switching devices on 200mm wafers and establish a European production center where the two partner companies will manufacture GaN devices for the solar, industrial, automotive, IT electronics and other markets. The two companies already have begun to demonstrate their capabilities by processing the first GaN-on-silicon devices built on 200mm substrates at X-FAB’s wafer fab in Dresden, Germany, and now are transforming that prototype into a process robust enough for the mass production environment. Working with CEA-Leti in Grenoble, where some process steps are performed, X-FAB and Exagan are manufacturing the first of Exagan’s G-FET™ 650 Volt, fast-switching power devices on 200mm substrates using a standard silicon manufacturing line. To date, the global semiconductor industry’s work with GaN has been limited to 100mm and 150mm wafers due to the challenges of creating the required GaN layers on silicon substrates. Without the ability to use larger wafers in mass production, GaN-based semiconductors have not been available at a competitive price-performance point compared to other power-switching alternatives. Exagan’s breakthrough G-Stack™ technology enables GaN-on-silicon devices to be manufactured economically on 200mm substrates by depositing a unique stack of GaN and strain management layers that alleviates the stress between bonded GaN and silicon layers. The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation. These advanced semiconductors also allow greater power integration, which improves the efficiency and reduces the cost of electrical converters.
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