Semiconductors and Semiconductor Equipment
Company Overview of X-FAB Semiconductor Foundries AG
X-FAB Semiconductor Foundries AG manufactures silicon wafers for mixed-signal integrated circuits. It manufactures silicon wafers for mixed-signal integrated circuits. The company manages product development flow and supply chain for its customer’s semiconductor products. It offers technical support, online support, technical documentation, design support, prototyping and manufacturing support solutions, outsourcing and process transfer management, and e-business services; and analog/mixed-signal reference kits for the adoption of constraint-driven design, mixed-signal simulation, floorplanning, schematic-driven layout, automated routing, and timing-driven digital block implementation and si...
Founded in 1999
Key Executives for X-FAB Semiconductor Foundries AG
Chief Executive Officer and Director
Compensation as of Fiscal Year 2015.
X-FAB Semiconductor Foundries AG Key Developments
X-FAB and Exagan Partner to Develop Robust Production Process for High-Volume GaN-On-Silicon Devices on 200mm Wafers
May 18 15
X-FAB Silicon Foundries and Exagan have entered into a joint development agreement to industrialize Exagan’s GaN-on-silicon technology, begin producing high-speed power switching devices on 200mm wafers and establish a European production center where the two partner companies will manufacture GaN devices for the solar, industrial, automotive, IT electronics and other markets. The two companies already have begun to demonstrate their capabilities by processing the first GaN-on-silicon devices built on 200mm substrates at X-FAB’s wafer fab in Dresden, Germany, and now are transforming that prototype into a process robust enough for the mass production environment. Working with CEA-Leti in Grenoble, where some process steps are performed, X-FAB and Exagan are manufacturing the first of Exagan’s G-FET™ 650 Volt, fast-switching power devices on 200mm substrates using a standard silicon manufacturing line. To date, the global semiconductor industry’s work with GaN has been limited to 100mm and 150mm wafers due to the challenges of creating the required GaN layers on silicon substrates. Without the ability to use larger wafers in mass production, GaN-based semiconductors have not been available at a competitive price-performance point compared to other power-switching alternatives. Exagan’s breakthrough G-Stack™ technology enables GaN-on-silicon devices to be manufactured economically on 200mm substrates by depositing a unique stack of GaN and strain management layers that alleviates the stress between bonded GaN and silicon layers. The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation. These advanced semiconductors also allow greater power integration, which improves the efficiency and reduces the cost of electrical converters.
X-FAB Silicon Foundries Expands MEMS Manufacturing Capabilities with Two New Dedicated MEMS Fabs
Jun 19 14
X-FAB Silicon Foundries announced it has reached a major milestone in further expanding its MEMS manufacturing capabilities in two of its German locations, Erfurt and Itzehoe. Driven by increased customer demand for MEMS manufacturing services, the expansion includes two new dedicated MEMS fabs with cleanroom space totaling more than 2,000 m(2). MEMS devices manufactured at X-FAB include pressure sensors, micro-mirrors, microphones and microfluidic devices used in mobile, consumer, medical and automotive applications. Customers requiring CMOS and MEMS solutions also benefit from access to X-FAB's existing CMOS wafer fabrication facilities. In Erfurt, X-FAB will access 1,300 m(2) of new manufacturing space dedicated for MEMS operations alongside its existing CMOS and MEMS semiconductor fabs on site. The new clean room will be used for high-volume manufacturing of 200mm MEMS and related processes with the first equipment to be installed in December this year. In Itzehoe, X-FAB is moving its operation into a new 1,000 m(2) fab commonly used with Fraunhofer ISIT, a renowned research institute for microelectronics and microsystems technology also located in Itzehoe. The new 200mm fab enables X-FAB to increase manufacturing capacity and expand its process capabilities. In addition, X-FAB will expand its R&D cooperation with Fraunhofer Institute. The Itzehoe fab was officially opened on May 28, 2014 with the first tools already installed.
X-FAB Group Announces Executive Changes
Mar 5 14
X-FAB announced that Rudi De Winter will become sole chief executive officer of X-FAB Group as of June 2014, a move he and Hans-Juergen Straub planned and prepared together for the past three years while they served as co-CEO's. Hans-Juergen Straub, who has served as CEO since X-FAB's inception 22 years ago, will continue to serve on the Board of Directors of X-FAB Silicon Foundries SE.
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