Lam Research Corporation Reports Unaudited Consolidated Earnings Results for Fourth Quarter and Year Ended June 28, 2015; Provides Earnings Outlook for the Quarter Ending September 2015; Reports Impairment Charges for the Fourth Quarter of 2015
Jul 29 15
Lam Research Corporation reported unaudited consolidated earnings results for fourth quarter and year ended June 28, 2015. For the quarter, the company’s revenue was $1,481,370,000 against $1,248,797,000 a year ago. Operating income was $191,035,000 against $215,850,000 a year ago. Income before income tax was $170,682,000 against $289,498,000 a year ago. Net income was $131,271,000 against $233,395,000 a year ago. Diluted net income per share was $0.74 against $1.35 a year ago. Net cash provided by operating activities was $292,066,000 against $245,891,000 a year ago. Non-GAAP operating income was $319,295,000 against $277,147,000 a year ago. Non-GAAP net income was $260,023,000 against $244,911,000 a year ago. Non-GAAP net income per share was $1.50 against $1.40 a year ago. Capital expenditures and intangible assets was $63,133,000 against $41,764,000 a year ago.
For the year, the company’s revenue was $5,259,312,000 against $4,607,309,000 a year ago. Operating income was $788,039,000 against $677,669,000 a year ago. Income before income tax was $740,850,000 against $723,363,000 a year ago. Net income was $655,577,000 against $632,289,000 a year ago. Diluted net income per share was $3.70 against $3.62 a year ago. Net cash provided by operating activities was $785,503,000 against $717,049,000 a year ago. Capital expenditures and intangible assets was $198,265,000 against $145,503,000 a year ago.
For the quarter ending September 2015, on GAAP basis, the company expects revenue to be in the range of $1.60 billion to $75 million, gross margin to be in the range of 44.2% to 1%, net income per diluted share in the range of $1.46 to $0.10. On non-GAAP basis, the company expects revenue to be in the range of $1.60 billion to $75 million, gross margin to be in the range of 45.5% to 1%, net income per diluted share in the range of $1.70 to $0.10.
Goodwill impairment charges for the quarter were $79,444,000.
Lam Research Corp. Introduces Flex G Series for HAR Dielectric Etch
Jul 20 15
Lam Research Corp. has introduced the Flex G Series for high-aspect-ratio, or HAR, dielectric etch to enable the continued scaling of DRAM and 3D NAND devices. The HAR capacitor cells and vertical transistor channels within these devices require the formation of distortion-free vertical profiles from the top to the bottom of these tall, narrow features. Built upon Lam's Flex product family, the market leader in dielectric etch for memory, the new system meets these challenges by combining high ion energy, advanced process uniformity tuning, and proprietary RF pulsing. Together, these deliver overall best-in-class on-wafer performance, as well as the productivity needed to reduce manufacturing costs. For DRAM, scaling below 20 nm makes the dimensions of the capacitor (cell) features even more extreme and therefore harder to etch. These applications require stringent critical dimension (CD) control throughout the depth of the feature and tight across-wafer uniformity for both etch depth and profile. Similarly for 3D NAND, critical HAR processes include the vertical transistor channel and slit. Due to challenging dimensions, HAR structures are especially vulnerable to bowing, distortions such as tilting or twisting, and premature etch-stop. To address these issues, high selectivity and controlled material removal are required. The Flex G Series is the newest addition to Lam's Flex product line, which leads the dielectric etch market for memory applications. To address next-generation DRAM and 3D NAND scaling challenges, the system uses high ion energy to enable complete removal of material down to the bottom of HAR features. Advanced plasma confinement
and RF pulsing capabilities result in better than 2x improved mask selectivity and bowing-free, vertical profiles with minimal distortion. In addition, excellent CD uniformity control is enabled by advanced multi-zone gas distribution. Leveraging the proven manufacturing performance of the Flex product family, the system provides best-in-class productivity with fast etch rates.
Lam Research Corp. Releases VECTOR ALD Oxide System
Jul 20 15
Lam Research Corp. has released its VECTOR ALD Oxide system on the Extreme platform. The new product uses atomic layer deposition (ALD) to create highly conformal dielectric films with an emphasis on advanced patterning, in particular spacer-based multiple patterning. One key challenge is managing thickness variability of the self-aligned spacers that define critical dimensions (CDs). By delivering superior CD control, VECTOR ALD Oxide has been winning volume-production decisions for multi-patterning applications. Now leveraging Lam's Extreme platform, the latest system meets productivity requirements for continued scaling, where additional steps increase process time, cost, and complexity. As a result, VECTOR ALD Oxide is gaining rapid adoption by a number of chipmakers for advanced multi-step patterning applications. Lam's advanced ALD capabilities, the latest VECTOR ALD Oxide system delivers the uniformity required for CD control of the ultra-thin films critical to SADP and SAQP schemes. The quad-station modules process four wafers simultaneously and share components to improve reliability and chamber matching, contributing to wafer-to-wafer repeatability performance. The system's compact design delivers as much as 20% higher footprint productivity compared with other solutions. Process hardware has also been optimized to enable fast gas and RF switching, increasing throughput and reducing precursor usage for improved running costs. These innovative process module features combined with the high-productivity platform deliver the performance and cost-efficiency needed for manufacturing. Consequently, VECTOR ALD Oxide is winning development and production tool of record positions at manufacturers for advanced multi-patterning applications. This momentum is being successfully expanded to other applications, such as high-aspect ratio liners for through-silicon vias (TSVs) and image sensors.