Lam Research Corporation Announces Executive Changes
Aug 27 15
On August 25, 2015, Grant M. Inman, a member of the board of directors and the lead independent director of Lam Research Corporation and William R. Spivey, a member of the board of directors of the company, notified the company that they are retiring from their positions with the company effective as of November 2, 2015. In connection with the retirements, the board of directors reduced its size from eleven to nine members effective immediately prior to the 2015 annual meeting of stockholders and appointed Abhijit Y. Talwalkar as lead independent director effective as of August 27, 2015.
Lam Research Corporation Announces Quarterly Dividend, Payable on September 30, 2015
Aug 27 15
Lam Research Corporation announced that its Board of Directors has approved a quarterly dividend of $0.30 per share of common stock. On an annualized basis, this will return approximately $190 million to stockholders based on shares outstanding as of June 28, 2015. The dividend payment will be made September 30, 2015 to holders of record on September 9, 2015.
Lam Research Corporation Presents at 17th Annual Pacific Crest Global Technology Leadership Forum 2015, Aug-11-2015 09:30 AM
Jul 30 15
Lam Research Corporation Presents at 17th Annual Pacific Crest Global Technology Leadership Forum 2015, Aug-11-2015 09:30 AM. Venue: The Sebastian, 16 Vail Road, Vail, CO 81657, United States.
Lam Research Corporation Reports Unaudited Consolidated Earnings Results for Fourth Quarter and Year Ended June 28, 2015; Provides Earnings Outlook for the Quarter Ending September 2015; Reports Impairment Charges for the Fourth Quarter of 2015
Jul 29 15
Lam Research Corporation reported unaudited consolidated earnings results for fourth quarter and year ended June 28, 2015. For the quarter, the company’s revenue was $1,481,370,000 against $1,248,797,000 a year ago. Operating income was $191,035,000 against $215,850,000 a year ago. Income before income tax was $170,682,000 against $289,498,000 a year ago. Net income was $131,271,000 against $233,395,000 a year ago. Diluted net income per share was $0.74 against $1.35 a year ago. Net cash provided by operating activities was $292,066,000 against $245,891,000 a year ago. Non-GAAP operating income was $319,295,000 against $277,147,000 a year ago. Non-GAAP net income was $260,023,000 against $244,911,000 a year ago. Non-GAAP net income per share was $1.50 against $1.40 a year ago. Capital expenditures and intangible assets was $63,133,000 against $41,764,000 a year ago.
For the year, the company’s revenue was $5,259,312,000 against $4,607,309,000 a year ago. Operating income was $788,039,000 against $677,669,000 a year ago. Income before income tax was $740,850,000 against $723,363,000 a year ago. Net income was $655,577,000 against $632,289,000 a year ago. Diluted net income per share was $3.70 against $3.62 a year ago. Net cash provided by operating activities was $785,503,000 against $717,049,000 a year ago. Capital expenditures and intangible assets was $198,265,000 against $145,503,000 a year ago.
For the quarter ending September 2015, on GAAP basis, the company expects revenue to be in the range of $1.60 billion to $75 million, gross margin to be in the range of 44.2% to 1%, net income per diluted share in the range of $1.46 to $0.10. On non-GAAP basis, the company expects revenue to be in the range of $1.60 billion to $75 million, gross margin to be in the range of 45.5% to 1%, net income per diluted share in the range of $1.70 to $0.10.
Goodwill impairment charges for the quarter were $79,444,000.
Lam Research Corp. Introduces Flex G Series for HAR Dielectric Etch
Jul 20 15
Lam Research Corp. has introduced the Flex G Series for high-aspect-ratio, or HAR, dielectric etch to enable the continued scaling of DRAM and 3D NAND devices. The HAR capacitor cells and vertical transistor channels within these devices require the formation of distortion-free vertical profiles from the top to the bottom of these tall, narrow features. Built upon Lam's Flex product family, the market leader in dielectric etch for memory, the new system meets these challenges by combining high ion energy, advanced process uniformity tuning, and proprietary RF pulsing. Together, these deliver overall best-in-class on-wafer performance, as well as the productivity needed to reduce manufacturing costs. For DRAM, scaling below 20 nm makes the dimensions of the capacitor (cell) features even more extreme and therefore harder to etch. These applications require stringent critical dimension (CD) control throughout the depth of the feature and tight across-wafer uniformity for both etch depth and profile. Similarly for 3D NAND, critical HAR processes include the vertical transistor channel and slit. Due to challenging dimensions, HAR structures are especially vulnerable to bowing, distortions such as tilting or twisting, and premature etch-stop. To address these issues, high selectivity and controlled material removal are required. The Flex G Series is the newest addition to Lam's Flex product line, which leads the dielectric etch market for memory applications. To address next-generation DRAM and 3D NAND scaling challenges, the system uses high ion energy to enable complete removal of material down to the bottom of HAR features. Advanced plasma confinement
and RF pulsing capabilities result in better than 2x improved mask selectivity and bowing-free, vertical profiles with minimal distortion. In addition, excellent CD uniformity control is enabled by advanced multi-zone gas distribution. Leveraging the proven manufacturing performance of the Flex product family, the system provides best-in-class productivity with fast etch rates.