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Last $19.88 USD
Change Today -0.10 / -0.50%
Volume 14.8M
AMAT On Other Exchanges
Hong Kong
As of 8:10 PM 05/4/15 All times are local (Market data is delayed by at least 15 minutes).

applied materials inc (AMAT) Key Developments

Applied Materials, Inc., Tokyo Electron Limited - M&A Call

To discuss the termination of Business Combination Agreement between Applied Materials, Inc. and Tokyo Electron Limited

Applied Materials Announces the Applied Centura Tetra Z Photomask Etch System

Applied Materials announced the Applied Centura Tetra Z Photomask Etch system for etching next-generation optical lithographic photomasksneeded by the industry to continue multiple patterning scaling to the 10nm node and beyond. The new tool extends the capabilities of Applied's Tetra platform, delivering angstrom-level photomask accuracy for critical dimension (CD) parameters required to meet stringent patterning specifications for future logic and memory devices. Applied developed the Tetra Z tool for advanced chrome, MoSi, hard mask and quartz (fused silica) etch applications used to fabricate advanced binary and phase-shift masks (PSMs). Offering continuous technical innovations and unprecedented CD performance, the system extends immersion lithography for quadruple patterning and cutting-edge resolution enhancement techniques. Vital capabilities ensuring pattern transfer fidelity include uniform, linear precision etching across all feature sizes and pattern densities with virtually zero defectivity. Excellent CD performance combined with high etch selectivity enable the use of thinner resist films for achieving smaller photomask CD patterns on critical device layers. Controllable CD bias capability expands the system's flexibility to meet customer specific requirements. Unique quartz etch depth control ensures precision phase angle and aids integrated circuit scaling by providing customers the capability to use alternating aperture PSMs and chromeless phase lithography. These key advances derive from a variety of system improvements in chamber design, plasma stability, ion and radical control, flow and pressure control, and real-time process monitoring and control.

Applied Materials Receives Order for Two Transmission-Class Superconducting Fault Current Limiters

Glow Energy Public Company Limited (Glow) has placed an order with Applied Materials for two superconducting fault current limiters (SCFCL). Glow intends to commission the SCFCLs in its utility grid located in the Map Ta Phut Industrial Estate. Glow anticipates that the fault current protection provided by the SCFCLs will enable Glow to increase generation and supply more power at higher quality to its customers. Representing the first use of SCFCLs in Thailand, these systems support adding capacity to address growing energy demand by offering a robust approach to reducing fault currents while minimizing voltage dips on distribution and transmission utility networks. A fault current is an unintended, excessive current flowing through an electrical system that can damage power equipment and disrupt electricity supply. Higher fault levels typically increase as power capacity grows and grid meshing increases. SCFCL technology is designed to reduce the first peak of a fault current on a power line to limit the destructive forces on the power system and improve equipment reliability. Glow has ordered two 115KV SCFCL systems for its high-voltage transmission network.

Applied Materials Announces Cash Dividend Payable on June 11, 2015

Applied Materials, Inc. announced that its Board of Directors has approved a quarterly cash dividend of $0.10 per share payable on the company's common stock. The dividend is payable on June 11, 2015 to stockholders of record as of May 21, 2015.

Applied Materials Unveils Breakthrough E-Beam Metrology Tool for FinFET Transistors and 3D NAND Devices

Applied Materials, Inc. announced the industry's first in-line 3D CD SEM metrology tool for solving the challenges of measuring the high aspect ratio and complex features of 3D NAND and FinFET devices. The new Applied VeritySEM(R) 5i system offers high-resolution imaging and backscattered electron (BSE) technology that enable exceptional CD control in-line. Using the VeritySEM 5i system can speed up chipmakers' process development and production ramp, and improve device performance and yield in high-volume production. Innovations in metrology precision are needed to improve device performance, reduce variability and boost yields of increasingly intricate high-performance, high-density 3D devices. An advanced high-resolution SEM column, tilted beam and BSE imaging give the VeritySEM 5i system its unique 3D metrology capability to measure and monitor the most vital and challenging FinFET and 3D NAND structures in-line. Specifically, BSE imaging for via-in-trench bottom CD enables chipmakers to ensure connectivity between underlying and overlaying metal layers. For controlling FinFET sidewall, as well as gate and fin height, where the smallest variation impacts device performance and yield, the VeritySEM 5i tool's tilt-beam provides exact, repeatable in-line measurements. High-resolution BSE imaging enables continued vertical scaling through enhanced sensitivity for measuring the asymmetrical sidewall and bottom CDs of 3D NAND devices with very high aspect ratios reaching up to 60:1 and beyond.


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