Cascade Microtech Expands Power Device Characterization Solution to Meet Ultra High-Voltage/High-Current Requirements

Cascade Microtech Expands Power Device Characterization Solution to Meet Ultra 
High-Voltage/High-Current Requirements 
New Ultra High-Power (UHP) Probe and Enhanced Thermal Chuck
Complement the Tesla Probe System to Deliver Expanded Capabilities 
BEAVERTON, OR -- (Marketwired) -- 05/20/14 --  Cascade Microtech,
Inc. (NASDAQ: CSCD), a leading supplier of solutions that enable
precision measurements of integrated circuits at the wafer level,
today announced new additions to round out its power device test and
measurement solutions from the engineering lab through production
volume. The Ultra High-Power (UHP) probe, coupled with the expansion
of thermal chuck capabilities, now supports testing at both high
current and high voltage with one contact. 
Power semiconductors are becoming increasingly important in efficient
power generation and distribution. Power semiconductor devices are
manufactured using traditional Silicon and wide band gap materials
such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Power
devices such as Insulated Gate Bipolar Transistors (IGBT) are
increasingly becoming the device of choice in this market. With an
easily driven Metal Oxide Semiconductor (MOS) gate and low conduction
loss, IGBT devices are displacing Bipolar Junction Transistors (BJT)
for high-voltage and high-current applications. The industry trend
also points to replacing MOSFET devices with IGBTs except in very low
current applications, and the IGBT market is expected to grow to $6
billion by 2018 (Yole Developpement, IGBT Markets and Applications
Trends, 6/10/2013).  
Power Market Driving New Requirements for Test and Measurement 
Recent developments in semiconductor technology allow devices to
operate at higher voltages and handle higher currents. To fully
characterize these devices, manufacturers will need to test
efficiently under extreme conditions. The industry is driving new
test and measurement capabilities, such as the ability to switch
between states and characterize the device in both high-current and
high-voltage modes. Previous test and measurement limitations led to
multiple touchdowns, resulting in pad damage and errors that reduced
throughput. Cascade Microtech's new Ultra High-Power (UHP) probe is
the first of its kind to easily alternate between high-current and
high-voltage setups, answering these emerging needs. With the UHP
probe, only a single touchdown is needed, decreasing test setup time,
reducing risk of errors, minimizing device pad damage and extending
probe life.  
The UHP probe has a maximum working voltage of 10 kV at temperatures
up to 200 degrees C and 8kV at 300 degrees C to meet the needs of
MOSFET and IGBT devices. The probe has a maximum current handling
capability of 300 A (allowing 600 A when using two probes in
parallel), and is operational up to 300 degrees C to address SiC
devices used in automotive and powertrain applications. The UHP probe
comes with a selection of probe tips to accommodate different pad
A Complete Power Device Measurement Solution
 Cascade Microtech
offers a complete power device measurement system, when the UHP probe
is paired with its Tesla semi-automated probe systems. The Tesla
probe stations now can be configured with newly enhanced thermal
chucks that have expanded capabilities to 10 kV/600 A to characterize
vertical devices such as IGBTs in a temperature range of -55 degrees
C up to 300 degrees C. For power device characterization and low
volume production, the system works with Agilent's B1505A parametric
analyzer, and their ultra-high current (N1265A) and ultra-high
voltage (N1268A) expander units. Customers can have a complete
solution enabling high power measurement capability to characterize
devices up to 10 kV and currents in excess of 500 A pulsed. All with
one touchdown -- and one setup.  
Automated On-wafer Power Device Probing
 Cascade Microtech has also
been meeting high-power device measurement challenges in a production
environment with the first fully-automated on-wafer probe system.
Rated up to 10k V/400 A, the APS200TESLA delivers unmatched
electrical performance for high-voltage and high-current device
characterization at production speeds. The APS200TESLA allows
customers to save time by avoiding unnecessary dicing and packaging
prior to final test. By testing on-wafer in a production environment,
the APS200TESLA enables customers to reduce test costs and get their
products to market faster. 
"We've been able to make some great innovations in power device
testing as we work closely with customers and others in the
industry," said Debbora Ahlgren, vice president of marketing, Cascade
Microtech. "Our test and measurement solutions enable easy, fast and
safe measurements of IGBT and MOSFET high-power devices at the wafer
level. In both engineering and production environments, we can help
increase throughput and improve measurement reliability." 
For more information visit 
About Cascade Microtech, Inc. 
 Cascade Microtech, Inc. (NASDAQ:
CSCD) is a worldwide leader in precision contact, electrical
measurement and test of integrated circuits (ICs), optical devices
and other small structures. For technology businesses and scientific
institutions that need to evaluate small structures, Cascade
Microtech delivers access to electrical data from wafers, ICs, IC
packages, circuit boards and modules, MEMS, 3D TSV, LED devices and
more. Cascade Microtech's leading-edge stations, probes, probe cards,
advanced thermal subsystems and integrated systems deliver precision
accuracy and superior performance both in the lab and during
production manufacturing of high-speed and high-density semiconductor
chips. For more information visit 
Debbora Ahlgren
Cascade Microtech, Inc.
(503) 601-1000 
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