STMicroelectronics Reveals Climate-Saving Power Devices with High-Temperature Performance Edge

STMicroelectronics Reveals Climate-Saving Power Devices with High-Temperature
Performance Edge

ST is among first to commercialize silicon-carbide power MOSFETs, and achieves
industry-leading 200°C rating for more efficient, simplified designs

Geneva, Switzerland, March 12, 2014 (GLOBE NEWSWIRE) -- STMicroelectronics
(NYSE:STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, has revealed an advanced new product
family enabling power supply designers to drive up energy efficiency in
applications such as solar inverters and electric vehicles, enterprise
computing, and industrial motor drives.

ST is among the first companies to produce this type of device, a high-voltage
silicon carbide (SiC) power MOSFET, and has achieved the industry's highest
temperature rating of 200°C. SiC properties help save at least 50% of the
energy normally wasted passing through conventional silicon power transistors.
The devices can also be physically smaller for a high breakdown voltage. This
technology is seen as essential for continued improvement in system energy
efficiency, miniaturization, and cost.

In computer rooms and data centers, high energy costs are driving power and
efficiency to the top of many IT directors' concerns. Replacing ordinary
silicon switches with SiC devices, in bulk power supplies, helps increase
Power Usage Effectiveness (PUE); a standard metric for determining data-center
energy efficiency. The Climate Savers Computing Initiative (CSCI) claims that
more energy-efficient networking systems and devices can help save over $5
billion and offset 38 million tons of CO2 by 2015.

SiC MOSFETs are also used in solar inverters, as an alternative for
conventional high-voltage silicon IGBTs (Insulated Gate Bipolar Transistor) to
convert the DC output from the panel into high-voltage AC feeding into the
mains supply with no special drive circuitry required. In addition, by
operating at higher frequencies than IGBTs, SiC MOSFETs allow designers to
miniaturize other components in the power supply thereby reducing cost and
size as well as enhancing energy efficiency.

In electric vehicles, SiC is expected to help significantly increase the
energy efficiency and reduce the size of traction systems. The US DRIVE
Electrical & Electronics Technical Team, a partnership between industry and
the US government's Department of Energy, is calling for energy losses to be
approximately halved by 2020 while also reducing size by more than 20%. The
team's roadmap specifies wide bandgap semiconductors - in other words, SiC
technology - as a focus for R&D to increase power-converter efficiency and
make the device tolerate higher operating temperatures more safely. The
increased temperature capability of ST's SiC devices (200°C), compared to
ordinary silicon and competitors' SiC MOSFETs, will help simplify vehicle
cooling system design.

ST's new 1200V SiC power MOSFET, the SCT30N120, is currently sampling and will
enter volume production by June 2014. It is available in ST's proprietary
HiP247 package, which has an industry-standard outline and is optimized for
high thermal performance. The guide price is $35.00 in quantities of 1,000
units.

For more information visit www.st.com/sicmos

Major features of SCT30N120:

  oOn-state resistance (RDS(ON)):

  o80milliohm typ. @ 25°C
  oless than or equal to 100milliohm typ over entire temperature range to
    200°C

  oLow turn-off energy and gate charge (ensures efficient, high-speed
    switching)
  oLeakage current lower than 10 uA typ (enhances system energy efficiency
    and reliability, compared to other structures based on the same material)
  oVery fast intrinsic and robust body diode (saves external freewheeling
    diode for cost/size reduction)
  oSimplified gate drive circuitry (reduces costs of network driving)
  o200°C max. operating temperature (reduces pc-board size, simplifies
    thermal management)

About STMicroelectronics

ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.

In 2013, the Company's net revenues were $8.08 billion. Further information on
ST can be found at www.st.com.

For Press Information Contact:

STMicroelectronics

Michael Markowitz

Director Technical Media Relations

+1 781 591 0354

michael.markowitz@st.com

1200V SiC MOSFET from STMicro http://hugin.info/152740/R/1768240/600953.pdf
1200V SiC MOSFET from STMicro_IMAGE
http://hugin.info/152740/R/1768240/600955.JPG

HUG#1768240

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