Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

  Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20
  Nanometer Process Technology

Business Wire

SEOUL, South Korea -- March 10, 2014

Samsung Electronics Co., Ltd., the world leader in memory technology, today
announced that it is mass producing the most advanced DDR3 memory, based on a
new 20 nanometer process technology, for use in a wide range of computing
applications.

Samsung 4Gb 20nm DDR3 memory (Photo: Business Wire)

Samsung 4Gb 20nm DDR3 memory (Photo: Business Wire)

Samsung has pushed the envelope of DRAM scaling, while utilizing currently
available immersion ArF lithography, in its roll-out of the industry’s most
advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor
linked to one another, scaling is more difficult than with NAND Flash memory
in which a cell only needs a transistor. To continue scaling for more advanced
DRAM, Samsung refined its design and manufacturing technologies and came up
with a modified double patterning and atomic layer deposition.

Samsung’s modified double patterning technology marks a new milestone, by
enabling 20nm DDR3 production using current photolithography equipment and
establishing the core technology for the next generation of 10nm-class DRAM
production. Samsung also successfully created ultrathin dielectric layers of
cell capacitors with an unprecedented uniformity, which has resulted in higher
cell performance.

With the new 20nm DDR3 DRAM applying these technologies, Samsung also has
improved manufacturing productivity, which is over 30 percent higher than that
of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class*
DDR3.

In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of
the energy consumed by equivalent modules fabricated using the previous 25
nanometer process technology. This improvement provides the basis for
delivering the industry’s most advanced green IT solutions to global
companies.

“Samsung’s new energy-efficient 20-nanometer DDR3 DRAM will rapidly expand its
market base throughout the IT industry including the PC and mobile markets,
quickly moving to mainstream status,” said Young-Hyun Jun, executive vice
president, memory sales and marketing, Samsung Electronics. “Samsung will
continue to deliver next-generation DRAM and green memory solutions ahead of
the competition, while contributing to the growth of the global IT market in
close cooperation with our major customers.”

According to market research data from Gartner, the global DRAM market will
grow from $35.6 billion US dollars in 2013 to $37.9 billion US dollars in
2014.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in technology, opening new
possibilities for people everywhere. Through relentless innovation and
discovery, we are transforming the worlds ofTVs, smartphones, tablets, PCs,
cameras, home appliances, printers, LTE systems, medical devices,
semiconductors and LED solutions. We employ 286,000 people across 80 countries
with annual sales of US$216.7 billion. To discover more, please visit
www.samsung.com.

* Editors’ Note: 10nm-class means a process technology node somewhere between
10 and 20 nanometers, and 30nm-class means a process technology node somewhere
between 30 and 40 nanometers.

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Contact:

Samsung Semiconductor
John Lucas, APR, 408-544-4363
j.lucas@ssi.samsung.com
 
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