Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile World Congress 2014 First CMOS PA to Deliver GaAs-Level Performance for LTE Devices is an Integral Part of the UltraCMOS Global 1 System, the Industry’s First Reconfigurable RF Front End Mobile World Congress 2014 Business Wire BARCELONA, Spain -- February 24, 2014 MOBILE WORLD CONGRESS – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of being integrated onto a single chip with Peregrine’s Global 1 system, the first reconfigurable RF front end (RFFE). Only with an integrated, reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU handset design for global markets. To support over 40 frequency bands and a more than 5,000-fold increase in the number of possible operating states, a truly reconfigurable RFFE is now a requirement. This level of reconfigurability is only feasible with a CMOS process. Peregrine’s entire UltraCMOS Global 1 system – multimode, multiband (MMMB) power amplifier (PA); post-PA switch; antenna switch; and antenna tuner – is based on Peregrine’s UltraCMOS 10 technology platform. This platform leverages 25 years of RF expertise with proven performance demonstrated by more than 2 Why: billion RF SOI units shipped. Before now, no vendor has been able to deliver GaAs-level PA performance in a CMOS PA, which prevented CMOS PAs from competing in the performance-driven LTE handset market. In the demonstration, visitors will see that the UltraCMOS Global 1 PA has the same raw performance as the leading GaAs PAs, as well as a 33-percent efficiency increase over other CMOS PAs. This level of performance is reached without enhancements from envelope tracking or digital predistortion, which is often used when benchmarking CMOS PAs with GaAs PAs. When: Feb. 24-27, 2014 Where: Mobile World Congress 2014 Fira Gran Via – Barcelona, Spain Hall 2, Meeting Room 2A20MR Contact: Kimberly Stoddard, firstname.lastname@example.org, +1 (415) 806-5793 ABOUT PEREGRINE SEMICONDUCTOR Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. Peregrine holds more than 170 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit http://www.psemi.com. The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners. Contact: Peregrine Semiconductor Kimberly Stoddard, +1-415-806-5793 email@example.com
Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile World Congress 2014
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