Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile World Congress 2014

  Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile
  World Congress 2014

First CMOS PA to Deliver GaAs-Level Performance for LTE Devices is an Integral
Part of the UltraCMOS Global 1 System, the Industry’s First Reconfigurable RF
                                  Front End

Mobile World Congress 2014

Business Wire

BARCELONA, Spain -- February 24, 2014

MOBILE WORLD CONGRESS – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder
of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts
the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA)
at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS
Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance
level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of
being integrated onto a single chip with Peregrine’s Global 1 system, the
first reconfigurable RF front end (RFFE). Only with an integrated,
reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU
handset design for global markets.

               To support over 40 frequency bands and a more than 5,000-fold
               increase in the number of possible operating states, a truly
               reconfigurable RFFE is now a requirement. This level of
               reconfigurability is only feasible with a CMOS process.
               Peregrine’s entire UltraCMOS Global 1 system – multimode,
               multiband (MMMB) power amplifier (PA); post-PA switch; antenna
               switch; and antenna tuner – is based on Peregrine’s UltraCMOS
               10 technology platform. This platform leverages 25 years of RF
               expertise with proven performance demonstrated by more than 2
Why:        billion RF SOI units shipped. Before now, no vendor has been
               able to deliver GaAs-level PA performance in a CMOS PA, which
               prevented CMOS PAs from competing in the performance-driven LTE
               handset market. In the demonstration, visitors will see that
               the UltraCMOS Global 1 PA has the same raw performance as the
               leading GaAs PAs, as well as a 33-percent efficiency increase
               over other CMOS PAs. This level of performance is reached
               without enhancements from envelope tracking or digital
               predistortion, which is often used when benchmarking CMOS PAs
               with GaAs PAs.
When:          Feb. 24-27, 2014
Where:         Mobile World Congress 2014
               Fira Gran Via – Barcelona, Spain
               Hall 2, Meeting Room 2A20MR
Contact:       Kimberly Stoddard, pr@psemi.com, +1 (415) 806-5793

ABOUT PEREGRINE SEMICONDUCTOR

Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on
insulator), is a leading fabless provider of high-performance, integrated RF
solutions. Since 1988 Peregrine and its founding team have been perfecting
UltraCMOS® technology – a patented, advanced form of SOI – to deliver the
performance edge needed to solve the RF market’s biggest challenges, such as
linearity. With products that deliver best-in-class performance and monolithic
integration, Peregrine is the trusted choice for market leaders in automotive,
broadband, industrial, Internet of Things, military, mobile devices,
smartphones, space, test-and-measurement equipment and wireless
infrastructure. Peregrine holds more than 170 filed and pending patents and
has shipped more than 2 billion UltraCMOS units. For more information, visit
http://www.psemi.com.

     The Peregrine Semiconductor name, logo, and UltraCMOS are registered
  trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other
  countries. All other trademarks mentioned herein are the property of their
                              respective owners.

Contact:

Peregrine Semiconductor
Kimberly Stoddard, +1-415-806-5793
pr@psemi.com
 
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