Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile World Congress 2014

  Peregrine Demonstrates the UltraCMOS® Global 1 Power Amplifier at Mobile   World Congress 2014  First CMOS PA to Deliver GaAs-Level Performance for LTE Devices is an Integral Part of the UltraCMOS Global 1 System, the Industry’s First Reconfigurable RF                                   Front End  Mobile World Congress 2014  Business Wire  BARCELONA, Spain -- February 24, 2014  MOBILE WORLD CONGRESS – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of being integrated onto a single chip with Peregrine’s Global 1 system, the first reconfigurable RF front end (RFFE). Only with an integrated, reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU handset design for global markets.                 To support over 40 frequency bands and a more than 5,000-fold                increase in the number of possible operating states, a truly                reconfigurable RFFE is now a requirement. This level of                reconfigurability is only feasible with a CMOS process.                Peregrine’s entire UltraCMOS Global 1 system – multimode,                multiband (MMMB) power amplifier (PA); post-PA switch; antenna                switch; and antenna tuner – is based on Peregrine’s UltraCMOS                10 technology platform. This platform leverages 25 years of RF                expertise with proven performance demonstrated by more than 2 Why:        billion RF SOI units shipped. Before now, no vendor has been                able to deliver GaAs-level PA performance in a CMOS PA, which                prevented CMOS PAs from competing in the performance-driven LTE                handset market. In the demonstration, visitors will see that                the UltraCMOS Global 1 PA has the same raw performance as the                leading GaAs PAs, as well as a 33-percent efficiency increase                over other CMOS PAs. This level of performance is reached                without enhancements from envelope tracking or digital                predistortion, which is often used when benchmarking CMOS PAs                with GaAs PAs. When:          Feb. 24-27, 2014 Where:         Mobile World Congress 2014                Fira Gran Via – Barcelona, Spain                Hall 2, Meeting Room 2A20MR Contact:       Kimberly Stoddard, pr@psemi.com, +1 (415) 806-5793  ABOUT PEREGRINE SEMICONDUCTOR  Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. Peregrine holds more than 170 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit http://www.psemi.com.       The Peregrine Semiconductor name, logo, and UltraCMOS are registered   trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other   countries. All other trademarks mentioned herein are the property of their                               respective owners.  Contact:  Peregrine Semiconductor Kimberly Stoddard, +1-415-806-5793 pr@psemi.com  
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