Raytheon kicks off 15th year of GaN innovation
Leading remarkable advancements in power and performance for warfighters
TEWKSBURY, Mass., Feb. 18, 2014
TEWKSBURY, Mass., Feb. 18, 2014 /PRNewswire/ --Raytheon Company (NYSE: RTN)
has embarked on its fifteenth year of pioneering the development and system
integration of gallium nitride (GaN) technology. In 1999, Raytheon commenced
research in GaN at the Raytheon Foundry in Andover, Mass. Today, Raytheon
remains at the forefront of GaN innovation, demonstrating the maturity of the
technology which significantly extends the warfighter's reach into the battle
space by increasing radar ranges, sensitivity and search capabilities.
(Photo: http://photos.prnewswire.com/prnh/20140218/NE66502-INFO )
"GaN technologies are transforming the way we address the evolving needs of
our customers," said Paul Ferraro, vice president of Advanced Technology for
Raytheon's Integrated Defense Systems business. "Through partnerships with the
Office of the Secretary of Defense (OSD) and DARPA, we are harnessing the
revolutionary power, efficiency and performance improvements that GaN provides
in programs today including AMDR and Next Generation Jammer. We are optimistic
about its impact on future initiatives like 3DELRR and others."
oIn 2000, Raytheon fabricated its first GaN transistor, the building block
for monolithic microwave integrated circuits (MMICs). A MMIC is a type of
integrated circuit device that operates at microwave frequencies (300 MHz
to 300 GHz). These devices typically perform functions such as microwave
mixing, power amplification, low noise amplification and high frequency
oFrom 2005 - 2008, Raytheon worked closely with DARPA on the WBGS Phase 2
program, meeting all transistor level technical metrics. The high power
density, high efficiency process that emerged during this time helped form
the underpinning for our microwave GaN production processes today.
oIn 2009, Raytheon released GaN for production in its 4" Trusted compound
oRaytheon was honored by the Office of the Secretary of Defense (OSD) for
successful completion of a Defense Production Act (DPA) Title III Gallium
Nitride (GaN) production improvement program in 2013, culminating more
than a decade of government and Raytheon investment in GaN RF (radio
frequency) circuit technology.
oRaytheon has demonstrated that the reliability of their GaN technology
exceeded the requirement for insertion into production military systems.
This maturation of GaN resulted in a Manufacturing Readiness Level (MRL)
production capability of "8," the highest level obtained by any
organization in the defense industry for this technology. MRL is a measure
used by the OSD and many of the world's major companies to assess the
maturity of manufacturing readiness.
oAlso through the OSD Title III program, GaN yield was improved by more
than 300 percent and cost was reduced more than 75 percent for MMICs.
Raytheon Company, with 2013 sales of $24 billion and 63,000 employees
worldwide, is a technology and innovation leader specializing in defense,
security and civil markets throughout the world. With a history of innovation
spanning 92 years, Raytheon provides state-of-the-art electronics, mission
systems integration and other capabilities in the areas of sensing; effects;
and command, control, communications and intelligence systems, as well as
cyber security and a broad range of mission support services. Raytheon is
headquartered in Waltham, Mass. For more about Raytheon, visit us at
www.raytheon.com and follow us on Twitter @Raytheon.
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SOURCE Raytheon Company
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