Global Ferroelectric RAM Market 2012-2016 Report Out Now

Global Ferroelectric RAM Market 2012-2016 Report Out Now

Dublin, Nov. 21, 2013 (GLOBE NEWSWIRE) -- Research and Markets
( has announced the
addition of the "Global Ferroelectric RAM Market 2012-2016" report to their

TechNavio's analysts forecast the Global Ferroelectric RAM market to grow at a
CAGR of 18.2 percent over the period 2012-2016. One of the key factors
contributing to this market growth is the high demand in wireless
applications. The Global Ferroelectric RAM market has also been witnessing the
increased investment in RandD. However, the time to market pressure could pose
a challenge to the growth of this market.

The key vendors dominating this market space are Fujitsu Ltd. and Ramtron
International Corp.

The other vendors mentioned in the report are IBM Corp., and Texas Instruments

Commenting on the report, an analyst from a hardware team said: ''The Global
Ferroelectric random access memory (FRAM) market is witnessing the trend of
increased investment in the RandD of FRAM. Some of the leading vendors in the
market such as Ramtron, Texas Instruments, and Fujitsu have increased their
investment in the RandD of FRAM. These vendors have identified huge potential
in this market, which is motivating them to invest more in RandD. Also, the
vendors need to set the proper technology standards, which can be done through
an effective RandD process. Thus, the increased investment in the RandD of
FRAM will lead to the development of highly efficient products.''

According to the report, one of the major growth drivers is the high demand
for FRAM in wireless applications. FRAM is widely used in several types of
wireless devices, among which battery-powered wireless sensors are one of the
major target products generating significant revenue in the market.

For more information visit

Research and Markets
Laura Wood, Senior Manager.
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Sector: Hardware

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