MarketersMedia: Toshiba Electronics Launches Miniature 600V Superjunction Power MOSFETs Small outline, low-profile DTMOS-IV devices with ultra-low RDS(ON) save space and reduce losses in high-speed switching designs. Düsseldorf, Germany, October 15th, 2013 - /MarketersMedia/Toshiba Electronics Europe (TEE) has announced that its next-generation superjunction (SJ) DTMOS-IV power MOSFET technology is being made available for the first time in small outline, low-profile DFN packaging. New 600V DTMOS-IV MOSFETs in a DFN package will be ideal for high-speed switching in power supplies, lighting ballasts and other applications requiring a space-saving alternative to more conventional D2PAK and DPAK devices. Offering current ratings from 9.7A to over 30A, the new devices in the TKxV60W family of 600V MOSFETs have ultra-low on resistance (RDS(ON)) ratings from 0.38? to just 0.098?. A leading RDS(ON)*Qg figure of merit ensures high-efficiency switching while a low output capacitance (Coss) supports optimised operation at light loads. Each device also incorporates an additional sense pin for direct driver connection. Toshiba's DTMOS-IV process delivers MOSFETs that exhibit a better temperature coefficient of RDS(ON) than alternative devices. This allows efficiency benefits to be realised even during high-temperature operation. As with other devices in Toshiba's DTMOS-IV family, the new DFN MOSFETs have an optimised gate-drain capacitance (Cgd) that delivers improved dv/dt switching control. Support for lower dv/dt ratings also helps to reduce the tendency to ringing in high-speed switching circuitry. At 8mm x 8mm the DFN package has an outline that is 20% smaller than a D2PAK package. A profile of only 0.85mm is almost three times lower than a traditional DPAK and over five times lower than a D2PAK. Toshiba uses the deep trench process in its DTMOS-IV fourth generation single-epitaxial superjunction MOSFET. This allows closer trench pitch compared to the third-generation (multi-epitaxial) process, leading to a 30% better on-state resistance for a given die area. About Toshiba: Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Corporation, which is ranked among the world's largest semiconductor vendors. TEE offers one of the industry's broadest IC and discrete product lines including high-end memory, microcontrollers, ASICs, ASSPs and display products for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products like HDDs, SSDs, SD Cards and USB sticks. Visithttp://www.toshiba-components.com/transistors/mosfet.htmlfor more information. Contact Info Name: Matt Wilkinson Organization: Pinnacle Marketing Communications Ltd Originally via MarketersMedia ------------------------------------------------------------------------------ This announcement is distributed by Thomson Reuters on behalf of Thomson Reuters clients. The owner of this announcement warrants that: (i) the releases contained herein are protected by copyright and other applicable laws; and (ii) they are solely responsible for the content, accuracy and originality of the information contained therein. Source: MarketersMedia via Thomson Reuters ONE HUG#1736218
MarketersMedia: Toshiba Electronics Launches Miniature 600V Superjunction Power MOSFETs
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