MarketersMedia: Toshiba Electronics Launches Miniature 600V Superjunction Power MOSFETs

  MarketersMedia: Toshiba Electronics Launches Miniature 600V Superjunction
                                Power MOSFETs

Small outline, low-profile DTMOS-IV devices with ultra-low RDS(ON) save space
and reduce losses in high-speed switching designs.

Düsseldorf, Germany, October 15th, 2013 - /MarketersMedia/Toshiba Electronics
Europe (TEE) has announced that its next-generation superjunction (SJ)
DTMOS-IV power MOSFET technology is being made available for the first time in
small outline, low-profile DFN packaging. New 600V DTMOS-IV MOSFETs in a DFN
package will be ideal for high-speed switching in power supplies, lighting
ballasts and other applications requiring a space-saving alternative to more
conventional D2PAK and DPAK devices.

Offering current ratings from 9.7A to over 30A, the new devices in the TKxV60W
family of 600V  MOSFETs have  ultra-low on resistance  (RDS(ON)) ratings  from 
0.38?  to  just  0.098?.  A   leading  RDS(ON)*Qg  figure  of  merit   ensures 
high-efficiency switching  while  a  low output  capacitance  (Coss)  supports 
optimised  operation  at  light  loads.  Each  device  also  incorporates   an 
additional sense pin for direct driver connection.

Toshiba's DTMOS-IV process delivers MOSFETs that exhibit a better  temperature 
coefficient of  RDS(ON)  than  alternative  devices.  This  allows  efficiency 
benefits to be realised even during high-temperature operation. As with  other 
devices in Toshiba's DTMOS-IV  family, the new DFN  MOSFETs have an  optimised 
gate-drain capacitance (Cgd) that  delivers improved dv/dt switching  control. 
Support for lower dv/dt ratings also  helps to reduce the tendency to  ringing 
in high-speed switching circuitry.

At 8mm x 8mm the DFN package has  an outline that is 20% smaller than a  D2PAK 
package. A  profile  of  only  0.85mm  is almost  three  times  lower  than  a 
traditional DPAK and over five times lower than a D2PAK.

Toshiba uses  the  deep  trench  process in  its  DTMOS-IV  fourth  generation 
single-epitaxial  superjunction  MOSFET.  This  allows  closer  trench   pitch 
compared to the third-generation (multi-epitaxial)  process, leading to a  30% 
better on-state resistance for a given die area.

About Toshiba:
Toshiba  Electronics  Europe  (TEE)  is  the  European  electronic  components 
business of Toshiba  Corporation, which  is ranked among  the world's  largest 
semiconductor vendors.  TEE  offers one  of  the industry's  broadest  IC  and 
discrete product  lines including  high-end memory,  microcontrollers,  ASICs, 
ASSPs and display  products for automotive,  multimedia, industrial,  telecoms 
and networking  applications. The  company  also has  a  wide range  of  power 
semiconductor solutions as well as storage products like HDDs, SSDs, SD  Cards 
and USB sticks.

Visithttp://www.toshiba-components.com/transistors/mosfet.htmlfor       more 
information.

Contact Info
Name: Matt Wilkinson
Organization: Pinnacle Marketing Communications Ltd

Originally via MarketersMedia

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