Peregrine’s New UltraCMOS® Antenna Switch Drives RF Performance in Samsung Galaxy S4 LTE-A Smartphone

  Peregrine’s New UltraCMOS® Antenna Switch Drives RF Performance in Samsung
  Galaxy S4 LTE-A Smartphone

     Dual SP7T MultiSwitch™ solves complex carrier aggregation challenges

Business Wire

SAN DIEGO -- September 17, 2013

Peregrine Semiconductor Corporation (NASDAQ: PSMI), a fabless provider of
high-performance radio frequency integrated circuits (RFICs), today announced
that it supplies the main antenna switch driving RF performance in the Samsung
Galaxy S4 LTE-Advanced (LTE-A) smartphone. The PE421280 MultiSwitch was
selected for its ability to support simultaneous multi-band operation of up to
14 frequency bands while delivering exceptional linearity, insertion loss
performance and small size.

The Samsung Galaxy S4 is touted as the first-ever implementation on the 4G
LTE-A network. The LTE-A protocol uses carrier aggregation – or the
simultaneous reception of multiple frequency bands – to improve data
throughput. According to Samsung, a three-minute download over 4G LTE would
only take about one minute on 4G LTE-A.

“The data throughput enabled by LTE-A dramatically improves the wireless
experience, and we are pleased to support a leader like Samsung in delivering
this technology to consumers,” said Jim Cable, CEO of Peregrine Semiconductor.
“Peregrine’s MultiSwitch devices are designed specifically to solve the
challenges of carrier aggregation as used in LTE-A platforms. Based on our
UltraCMOS technology, the devices feature not only the linearity required for
simultaneous, multi-band switching performance, but also the integration, low
power, and manufacturability required of high-volume consumer applications.“

Peregrine’s PE421280 antenna switch features an innovative combination of two
SP7T switches in a single IC to support 14 different frequency bands including
simultaneous multi-band operation. With HaRP™ technology enhancements, the
PE421280 delivers high linearity with an IIP3 of +75 dBm, as well as extremely
low insertion loss (0.35dB @ 900MHz; and 0.45 at 1900 MHz) and high isolation
(38 dB at 698-2170 MHz; and 33 dB at 2500-2690 MHz). The switch also features
industry-leading 2fo and 3fo for LTE of less than -80 dBm at 700 MHz. High
linearity and isolation performance are critical to ensure that radio signals
don’t spill into other bands during multi-band operation.

About Peregrine Semiconductor

Peregrine Semiconductor (NASDAQ: PSMI) is a fabless provider of
high-performance radio frequency integrated circuits (RFICs). Our solutions
leverage our proprietary UltraCMOS^® technology, an advanced RF
Silicon-On-Insulator process. Our products deliver what we believe is an
industry-leading combination of performance and monolithic integration, and
target a broad range of applications in the aerospace and defense, broadband,
industrial, mobile wireless device, test and measurement equipment, and
wireless infrastructure markets. Additional information is available
athttp://www.psemi.com.

     The Peregrine Semiconductor name, logo, and UltraCMOS are registered
  trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other
     countries. DuNE, and HaRP are trademarks of Peregrine Semiconductor
Corporation in the U.S.A., and other countries. All other trademarks mentioned
             herein are the property of their respective owners.

Tags/Keywords: Samsung Galaxy 4S, LTE-A, UltraCMOS, HaRP, MultiSwith, SP7T,
Antenna Switch

Contact:

Peregrine Semiconductor Corporation
Tiana Dixon, 503.708.1925
tdixon@psemi.com
or
Kimbery Stoddard, 415.806.5793
pr@psemi.com
 
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