Applied Materials : Applied Materials Unveils New Epitaxy Technology for High-Performance Transistors

   Applied Materials : Applied Materials Unveils New Epitaxy Technology for
                         High-Performance Transistors

  *New NMOS epitaxy deposition process is essential for faster transistors
    inside next-generation mobile processor chips
  *NMOS epitaxy boosts transistor speed by the equivalent of half a device
    node without increasing off-state power consumption

SANTA CLARA, Calif., July 8, 2012 - Applied Materials, Inc. is extending its
decade-long leadership in epitaxial (epi) technology with a newly developed
NMOS transistor application for its Applied Centura^® RP Epi system. This
capability supports the industry's move to extend epi deposition from PMOS
transistors to NMOS transistors at the 20nm node, enabling chipmakers to build
faster devices and deliver next-generation mobile computing power.

"Epi is an essential building block for high-performance transistors,
delivering a gain in speed equivalent to that obtained by scaling half a
device node," said Steve Ghanayem, vice president, Transistor and
Metallization Products in Applied Materials' Silicon Systems Group. "By
implementing an NMOS epi process in addition to established PMOS epi, we're
enabling foundry customers to further enhance their transistor performance for
next-generation devices."

Since the 90nm device node, strained selective epi films with in-situ doping
have improved mobility and reduced electrical resistance in PMOS transistors,
thereby increasing their speed. Applying selective epi in NMOS transistors
delivers a similar boost, which enhances overall chip performance. By
delivering this enabling technology for both types of transistors, Applied
Materials is supporting industry efforts to meet the ever increasing demand
for faster and greater computational power for multi-functional mobile
products. This increase in performance helps our customers to deliver advanced
capabilities, such as improved multi-tasking and higher-quality graphics and
image processing.

The Centura RP Epi system is the production-proven leader in PMOS epi
applications. With today's announcement, the system's portfolio now includes
selective deposition of films in targeted regions of NMOS transistors. Applied
Materials' market-leading, proprietary epi technologies enable deposition of
high quality strained films with precise placement of dopant atoms. Tight
manufacturing process controls result in excellent film properties,
uniformity, and exceptionally low defect levels. These qualities resolve
multiple performance issues, including resistivity of critical electrical
layers.

Central to the market leadership of the Applied CenturaRP Epi system is its
integrated low-temperature pre-clean Siconi® technology. Integrating the
pre-clean and epi processes on the same vacuum platform, eliminates queue time
and reduces interfacial contamination by more than an order of magnitude over
stand-alone systems, creating pristine silicon surfaces for defect-free epi
crystal growth. 

Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in providing
innovative equipment, services and software to enable the manufacture of
advanced semiconductor, flat panel display and solar photovoltaic products.
Our technologies help make innovations like smartphones, flat screen TVs and
solar panels more affordable and accessible to consumers and businesses around
the world. Learn more at www.appliedmaterials.com.

# # #

Contact:

Connie Duncan (editorial/media) 408.563.6209

Michael Sullivan (financial community) 408.986.7977

PHOTO: The Applied Materials Centura® RP Epi system

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Source: Applied Materials via Thomson Reuters ONE
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