RF-Lambda Selects TriQuint GaN for New Line of High Power Amplifiers TriQuint GaN Devices Powering Amplifiers for Defense, Industrial, Aerospace and Commercial Applications Business Wire RICHARDSON, Texas & HILLSBORO, Ore. -- June 30, 2013 TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced that RF-Lambda, a global microwave products manufacturer, has developed a new line of high power amplifiers based on TriQuint gallium nitride (GaN) power transistors. RF-Lambda’s new products are currently being qualified in commercial 4G systems, a defense flight system and other defense / aerospace projects. Reducing part counts and maintaining performance was central to RF-Lambda’s decision, says R&D Director Michael Liu. “We formerly supplied a key customer with two separate GaAs amplifiers to cover two bands. By using TriQuint GaN, we were able to replace those with a single GaN HEMT and cover the full frequency range. This increased design flexibility while decreasing production variation. Our customers also benefit by using software to switch bands rather than physically changing hardware, while still achieving necessary power. Our products support some of the world’s leading defense and commercial communications companies.” RF-Lambda is developing other new power amplifiers based upon TriQuint GaN transistors including a 1-18 GHz, 50 Watt device and 20W/40W solutions for 0.1-6 GHz as well as the industry-leading RFLUPA0706GE (0.7-6 GHz) 7W amplifier. James L. Klein, TriQuint Vice President and General Manager for Infrastructure and Defense Products said, “TriQuint is glad to play a role in this new line of high-power amplifiers. TriQuint GaN products offer important size, weight and power advantages that the defense industry was fast to appreciate. We now see more commercial applications using GaN thanks to its advantages, and we look forward to supporting RF-Lambda’s new programs.” Market researcher Strategy Analytics foresees significant GaN growth. “While defense supported GaN in many applications, communication infrastructure utilization is growing fast. Sat-Com, power and other infrastructure markets are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a compound average annual growth rate of over 34% to approximately $186M by 2015,” said Eric Higham, Director of Semiconductor Practice. Technical Details TriQuint’s new GaN high electron mobility transistor (HEMT) devices offer optimized power and efficiency at high drain voltage operating conditions. RF-Lambda chose the T2G6001528-Q3, which offers typical power added efficiency greater than 50% at 15dB gain; its performance can reduce the number of transistors in a design, which also benefits heat management. These advantages can lower part counts, reduce board space and lower overall system costs. The T2G6001528-Q3 is offered in a low thermal resistance, flangeless package. Samples and evaluation boards are now available. Contact TriQuint for product information, or visit our Sales webpage for assistance; register to receive product updates through TriQuint’s newsletter. Frequency Linear Output Operating Psat Current Package Part Description Range Gain Power Voltage (dBm) (mA) Style Number (GHz) (dB) (P3dB)(W) (V) GaN RF Power DC - 6 >15 20 28 42.5 50 4x5mm T2G6001528-Q3 Transistor FORWARD LOOKING STATEMENTS This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading supplier’, or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint’s operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint’s most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements. FACTS ABOUT TRIQUINT Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world’s top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry’s broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com. TriQuint: Reach Further, Reach Faster™ FACTS ABOUT RF-LAMBDA RF-LAMBDA is an internationally renowned supplier of components to the wireless market. We are dedicated to providing our customers with the highest-quality products available, supported by world-class customer service. RF-LAMBDA develops, manufactures, and distributes RF components for use in analog wireless networks in the North America, Europe and Asia-Pacific regions. RF-LAMBDA is an approved vendor for the leading manufacturers in the military, commercial, and aerospace markets. RF-Lambda: The Power Beyond Expectations™ is located at 10509 Vista Sorrento Pkwy #120, San Diego, CA 92121 (USA). Visit us on the web. Contact: TriQuint Semiconductor, Inc. Mark W. Andrews, +1 407-884-3404 Strategic Marketing Communications manager Mark.Andrews@triquint.com or Richard Martin, +1 972-994-8222 Transistor Product Manager email@example.com
RF-Lambda Selects TriQuint GaN for New Line of High Power Amplifiers
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