RF-Lambda Selects TriQuint GaN for New Line of High Power Amplifiers

  RF-Lambda Selects TriQuint GaN for New Line of High Power Amplifiers

 TriQuint GaN Devices Powering Amplifiers for Defense, Industrial, Aerospace
                         and Commercial Applications

Business Wire

RICHARDSON, Texas & HILLSBORO, Ore. -- June 30, 2013

TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier
and technology innovator, today announced that RF-Lambda, a global microwave
products manufacturer, has developed a new line of high power amplifiers based
on TriQuint gallium nitride (GaN) power transistors. RF-Lambda’s new products
are currently being qualified in commercial 4G systems, a defense flight
system and other defense / aerospace projects.

Reducing part counts and maintaining performance was central to RF-Lambda’s
decision, says R&D Director Michael Liu. “We formerly supplied a key customer
with two separate GaAs amplifiers to cover two bands. By using TriQuint GaN,
we were able to replace those with a single GaN HEMT and cover the full
frequency range. This increased design flexibility while decreasing production
variation. Our customers also benefit by using software to switch bands rather
than physically changing hardware, while still achieving necessary power. Our
products support some of the world’s leading defense and commercial
communications companies.”

RF-Lambda is developing other new power amplifiers based upon TriQuint GaN
transistors including a 1-18 GHz, 50 Watt device and 20W/40W solutions for
0.1-6 GHz as well as the industry-leading RFLUPA0706GE (0.7-6 GHz) 7W
amplifier.

James L. Klein, TriQuint Vice President and General Manager for Infrastructure
and Defense Products said, “TriQuint is glad to play a role in this new line
of high-power amplifiers. TriQuint GaN products offer important size, weight
and power advantages that the defense industry was fast to appreciate. We now
see more commercial applications using GaN thanks to its advantages, and we
look forward to supporting RF-Lambda’s new programs.”

Market researcher Strategy Analytics foresees significant GaN growth. “While
defense supported GaN in many applications, communication infrastructure
utilization is growing fast. Sat-Com, power and other infrastructure markets
are ramping to higher revenues. Strategy Analytics forecasts that the market
for GaN microelectronic devices will grow with a compound average annual
growth rate of over 34% to approximately $186M by 2015,” said Eric Higham,
Director of Semiconductor Practice.

Technical Details

TriQuint’s new GaN high electron mobility transistor (HEMT) devices offer
optimized power and efficiency at high drain voltage operating conditions.
RF-Lambda chose the T2G6001528-Q3, which offers typical power added efficiency
greater than 50% at 15dB gain; its performance can reduce the number of
transistors in a design, which also benefits heat management. These advantages
can lower part counts, reduce board space and lower overall system costs.

The T2G6001528-Q3 is offered in a low thermal resistance, flangeless package.
Samples and evaluation boards are now available. Contact TriQuint for product
information, or visit our Sales webpage for assistance; register to receive
product updates through TriQuint’s newsletter.

              Frequency   Linear   Output      Operating   Psat    Current   Package   Part
Description  Range      Gain    Power      Voltage    (dBm)  (mA)     Style    Number
              (GHz)       (dB)     (P3dB)(W)   (V)
GaN RF
Power        DC - 6     >15     20         28         42.5   50       4x5mm    T2G6001528-Q3
Transistor
                                                                               

FORWARD LOOKING STATEMENTS

This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains
forward-looking statements made pursuant to the Safe Harbor provisions of the
Private Securities Litigation Reform Act of 1995. Readers are cautioned that
forward-looking statements involve risks and uncertainties. The cautionary
statements made in this press release should be read as being applicable to
all related statements wherever they appear. Statements containing such words
as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading
supplier’, or similar terms are considered to contain uncertainty and are
forward-looking statements. A number of factors affect TriQuint’s operating
results and could cause its actual future results to differ materially from
any results indicated in this press release or in any other forward-looking
statements made by, or on behalf of, TriQuint including, but not limited to:
those associated with the unpredictability and volatility of customer
acceptance of and demand for our products and technologies, the ability of our
production facilities and those of our vendors to meet demand, the ability of
our production facilities and those of our vendors to produce products with
yields sufficient to maintain profitability, as well as the other “Risk
Factors” set forth in TriQuint’s most recent 10-Q report filed with the
Securities and Exchange Commission. This and other reports can be found on the
SEC web site, www.sec.gov. A reader of this release should understand that
these and other risks could cause actual results to differ materially from
expectations expressed / implied in forward-looking statements.

FACTS ABOUT TRIQUINT

Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global
provider of innovative RF solutions and foundry services for the world’s top
communications, defense and aerospace companies. People and organizations
around the world need real-time, all-the-time connections; TriQuint products
help reduce the cost and increase the performance of connected mobile devices
and the networks that deliver critical voice, data and video communications.
With the industry’s broadest technology portfolio, recognized R&D leadership,
and expertise in high-volume manufacturing, TriQuint creates standard and
custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface
acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has
ISO9001-certified manufacturing facilities in the U.S., production in Costa
Rica, and design centers in North America and Germany. For more information,
visit www.triquint.com.

TriQuint: Reach Further, Reach Faster™

FACTS ABOUT RF-LAMBDA

RF-LAMBDA is an internationally renowned supplier of components to the
wireless market. We are dedicated to providing our customers with the
highest-quality products available, supported by world-class customer service.
RF-LAMBDA develops, manufactures, and distributes RF components for use in
analog wireless networks in the North America, Europe and Asia-Pacific
regions. RF-LAMBDA is an approved vendor for the leading manufacturers in the
military, commercial, and aerospace markets. RF-Lambda: The Power Beyond
Expectations™ is located at 10509 Vista Sorrento Pkwy #120, San Diego, CA
92121 (USA). Visit us on the web.

Contact:

TriQuint Semiconductor, Inc.
Mark W. Andrews, +1 407-884-3404
Strategic Marketing Communications manager
Mark.Andrews@triquint.com
or
Richard Martin, +1 972-994-8222
Transistor Product Manager
richard.martin@triquint.com
 
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