Is Solid-State RF the Next Energy Source?

Is Solid-State RF the Next Energy Source? 
NXP Ignites Innovation With RF Power Transistors Dedicated to
2.45-GHz ISM Band 
06/05/13 --  Could radio-frequency signals become the next major
energy source for industrial, scientific and medical (ISM)
applications? At the IEEE International Microwave Symposium this
week, NXP Semiconductors N.V. (NASDAQ: NXPI) is introducing the
industry's first complete RF power transistor portfolio designed
specifically for the 2.45-GHz ISM frequency band, enabling RF energy
to be used as a clean, highly efficient and controllable heat source. 
NXP is demonstrating a wide range of RF-powered applications at IMS
2013, including an RF spark plug -- a compelling alternative to
conventional ignition systems for automotive engines; an RF plasma
lamp delivering bright, sun-like light at 140 lumens per watt; and a
solid-state cooker that can heat food safely, uniformly and
precisely. A video exploring the possibilities enabled by RF energy
is available here:  
Optimally matched to the 2.45-GHz ISM band, the NXP BLF2425M and
BLF25M series of RF power transistors achieve best-in-class
efficiencies in excess of 52% and offer a full range of power levels
between 12 and 350 W. NXP developed this dedicated ISM portfolio
while working with lead customers on RF-powered solutions for home
appliances for cooking, heating and drying; medical devices for
precision medical procedures; and automotive engines. The devices are
based on NXP's latest 28V LDMOS processes and all feature NXP's
field-proven ruggedness, manufacturing consistency and long-term
reliability, which enable these transistors to drive the typically
mismatched loads of ISM applications. 
"From automotive ignition to RF-powered lighting and household
appliances, the potential energy savings we could realize using RF
power on a societal scale are tremendous," said Mark Murphy, director
of marketing, RF power product line, NXP Semiconductors. "Over the
last 10 years, engineers exploring the ways to harness RF energy have
had to be content using brute force magnetrons with extremely limited
or next to no control -- with absolute power level the only parameter
they could adjust for indust
rial, scientific and medical
applications. With our new dedicated 2.45-GHz ISM portfolio, we're
providing solid-state RF power transistors that have been optimized
for this important frequency band, with a complete set of options for
different power levels, control and cost. We look forward to working
with our customers as they use RF energy as a cleaner, more efficient
and controllable power source for exciting new
 The BLF2425M6L(S)180P, BLF2425M7L(S)140
and BLF2425M7L(S)250P are now in volume production. Engineering
samples of the BLF25M612(G) are available to qualified customers. 

--  VIDEO: The RF Energy Revolution: Clean, Efficient, Controllable Power:
--  NXP LDMOS RF power transistors for the 2.45-GHz ISM band:

About NXP Semiconductors
 NXP Semiconductors N.V. (NASDAQ: NXPI)
provides High Performance Mixed Signal and Standard Product solutions
that leverage its leading RF, Analog, Power Management, Interface,
Security and Digital Processing expertise. These innovations are used
in a wide range of automotive, identification, wireless
infrastructure, lighting, industrial, mobile, consumer and computing
applications. A global semiconductor company with operations in more
than 25 countries, NXP posted revenue of $4.36 billion in 2012.
Additional information can be found by visiting  
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statements which include statements regarding NXP's business
strategy, financial condition, results of operations and market data,
as well as other statements that are not historical facts. By their
nature, forward-looking statements are subject to numerous factors,
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For further press information, please contact:
NXP Semiconductors
Eureka Endo 
+44 795 828 7483  
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Jannet Chen
+86 21 22055883 
Hillary Cain
+1 408 518 5227  
Preeti Gupta
+65 6603 9022 
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