Freescale delivers six new Airfast RF power solutions for TD-LTE base stations

  Freescale delivers six new Airfast RF power solutions for TD-LTE base
  stations

New RF transistors support metrocell and macrocell applications, deliver
exceptional gain and linearity for TD-LTE deployments at 2.3 and 2.6 GHz

IMS2013 International Microwave Symposium

Business Wire

SEATTLE -- June 3, 2013

Freescale Semiconductor (NYSE: FSL), the worldwide leader in high-power radio
frequency (RF) power transistors, introduces six new Airfast RF power
solutions designed specifically for TD-LTE base stations at the 2.3/2.6 GHz
frequency bands.

High throughput capacity and the ability to support a large number of
simultaneous users makes the 2.3/2.6 GHz frequency bands preferred for LTE
deployments worldwide. Late last year, the Chinese government announced it
will allocate 2.3/2.6 GHz frequency bands for the deployment and application
of TD-LTE technology, introducing significant growth opportunities.

The newest Freescale Airfast transistors deliver exceptional bandwidth and
linear efficiency in a small footprint and are engineered to help drive rapid
deployment of TD-LTE networks worldwide. The products span a broad range of
power points, from 50 W to 200 W, providing solutions for metrocell and
macrocell applications.

“Freescale accurately anticipated the timing and importance of the 2.3/2.6 GHz
frequency bands and is delivering on the promise of high performance from its
Airfast products,” said Ritu Favre, senior vice president and general manager
of Freescale’s RF business. “We are already shipping our new RF power
solutions and helping speed the deployment of TD-LTE networks worldwide.”

The new Freescale products reinforce the company’s commitment to offering
systems-level base station solutions, scaling from femtocell to macrocell base
station applications. In addition to Airfast RF power solutions, Freescale
offers a range of RF GaAs MMICs and the comprehensive QorIQ Qonverge platform,
which is the foundation for a portfolio of highly scalable processors built on
a common architecture and spanning from small- to large-cell base stations.
The QorIQ Qonverge platform allows OEMs to reuse software regardless of cell
size.

Product information

The four new Airfast RF transistor products for the 2.6 GHz LTE band are
in-package Doherty devices that deliver high efficiency within a compact
footprint. They include:

  *AFT26HW050S/GS – designed for metrocell base station applications in the
    2496-2690 MHz band. In asymmetrical Doherty, it delivers 47.4 dBm of peak
    power. With an average power of 9 W, the part delivers 47.1 percent
    efficiency and a 14.2 dB gain.
  *AFT26P100-4WS – designed for high-power metrocell base station
    applications in the 2496-2690 MHz band. In symmetrical Doherty, it
    delivers 51 dBm of peak power. With an average power of 22 W, the part
    delivers 43.9 percent efficiency and a 15.3 dB gain.
  *AFT26H160-4S4 – designed for mid-power macrocell base station applications
    in the 2496-2690 MHz band. In asymmetrical Doherty, it delivers 52.6 dBm
    of peak power. With an average power of 32 W, the part delivers 44.4
    percent efficiency and a 15.7 dB gain.
  *AFT26H200W03S – designed for high-power macrocell base station
    applications in the 2496-2690 MHz band. In asymmetrical Doherty, it
    delivers 54.6 dBm of peak power. With an average power of 45 W, the part
    delivers 44.4 percent efficiency and a 14.0 dB gain.

The two new Airfast RF transistor products for the 2.3 GHz LTE bands are
in-package Doherty devices that deliver high efficiency within a compact
footprint. They include:

  *AFT23H200-4S2L – designed for high-power macrocell base station
    applications in the 2300-2400 MHz cellular band. In asymmetrical Doherty,
    it delivers 54.6 dBm of peak power. With an average power of 45 W, the
    part delivers 42.8 percent efficiency and a 15.3 dB gain.
  *AFT23S170-13S, which can be used as the main or peaking transistor in a
    Doherty amplifier. In class AB operation at an average power of 45 W, it
    delivers 33.9 percent efficiency and an 18.8 dB gain.

Tweet This:  @Freescale announces new #Airfast transistors for 2.6 GHz,
covering more band for macro to micro cell base stations

About Airfast RF power solutions

Airfast RF power solutions are designed to simultaneously meet the challenges
of increased efficiency, peak power and signal bandwidth, while addressing the
persistent pressure to reduce costs. The products offer outstanding
performance and energy efficiency and are included in a range of Freescale RF
technologies – LDMOS, GaAs and GaN.

Pricing and availability

The AFT26HW050S/GS, AFT26P100-4WS, AFT23H200-4S2L and AFT23S170-13S are in
production now. The AFT26H200W03S and AFT26H160-4S4 are planned for production
by the end of June 2013. Please contact your local Freescale sales
representative for pricing information and to inquire about samples. For more
information about Freescale RF power LDMOS solutions, visit
www.freescale.com/RFpower.

About Freescale

Freescale Semiconductor (NYSE: FSL) is a global leader in embedded processing
solutions, providing industry-leading products that are advancing the
automotive, consumer, industrial and networking markets. From microprocessors
and microcontrollers to sensors, analog integrated circuits and connectivity –
our technologies are the foundation for the innovations that make our world
greener, safer, healthier and more connected. Some of our key applications and
end-markets include automotive safety, hybrid and all-electric vehicles, next
generation wireless infrastructure, smart energy management, portable medical
devices, consumer appliances and smart mobile devices. The company is based in
Austin, Texas, and has design, research and development, manufacturing and
sales operations around the world.www.freescale.com

Freescale and the Freescale logo are trademarks of Freescale Semiconductor,
Inc., Reg. U.S. Pat. & Tm. Off. Airfast and QorIQ Qonverge are a trademark of
Freescale Semiconductor, Inc. All other product or service names are the
property of their respective owners. © 2013 Freescale Semiconductor, Inc.

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Contact:

Media Contacts
Americas
Freescale Semiconductor
Jack Taylor, 512-996-5161
jack.taylor@freescale.com
or
Asia Pacific
Freescale Semiconductor
Gloria Shiu, (85-22) 666-8237
gloria.shiu@freescale.com
or
Europe, Middle East and Africa
Freescale Semiconductor
Laurent Massicot, (33-16) 935-7712
Laurent.massicot@freescale.com
or
India
Freescale Semiconductor
Anjali Srivastava, (91-120) 395-0000
anjali.srivastava@freescale.com
or
Japan
Freescale Semiconductor
Kiyomi Masuda, (81-3) 5437-9128
kiyomi.masuda@freescale.com
 
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