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STMicroelectronics : STMicroelectronics Reveals Latest Power Technology for Greener Industry and Infrastructure



 STMicroelectronics : STMicroelectronics Reveals Latest Power Technology for
                     Greener Industry and Infrastructure

Advanced internal structure of new power-transistor family delivers industry's
       best on-state resistance for low-energy, space-efficient designs

Geneva, May 22, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor
leader serving customers across the spectrum of electronics applications, has
introduced its latest generation of energy-efficient power devices that reduce
the environmental impact of equipment such as telecom or computing systems,
solar inverters, industrial automation, and automotive applications.

ST's new STripFET(TM) VII DeepGATE(TM) MOSFETs deliver the best conducting
efficiency among currently available 80V and 100V devices, while switching
efficiency is also increased. In addition, the devices help to simplify
designs and reduce equipment size and cost by allowing system power and
efficiency targets to be met using fewer devices in small package sizes.

The critical advance in ST's STripFET VII DeepGATE technology is an enhanced
MOSFET gate structure, which lowers device on-state resistance while also
reducing internal capacitances and gate charge for faster, more efficient
switching. The devices also have high avalanche ruggedness to survive
potentially damaging hard conditions, which makes them a strong choice for
automotive applications.

More than 15 STripFET VII DeepGATE devices are available immediately for
sample or production orders, including the STP270N8F7 80V device and several
100V parts in a choice of TO-220, DPAK, PowerFLAT(TM) 5x6, and 2-lead or
6-lead H^2PAK packages. Prices for 1000-piece orders range from $1.70 for the
100V STD100N10F7 and STL100N10F7 to $3.80 for the STH310N10F7-2 device. If
your company has a high-volume need, please contact your ST sales office.

About ST MOSFETs and Voltage Ratings:

STripFET VII DeepGATE joins ST's extensive portfolio of MOSFET technologies
offering industry-leading efficiency, power density and ruggedness at key
voltage ratings used in various applications. STripFET VII DeepGATE technology
is ideal for systems operating at DC voltages such as 48V, which is widely
used in telecom applications; devices with 80V or 100V rating have adequate
'safety margin' to withstand typical over-voltage surges in a 48V system.
STripFET VII DeepGATE is also chosen for highly rugged performance in 12V or
24V automotive applications.

Other technologies, such as MDmesh(TM) superjunction technology, are needed
for optimum efficiency at higher voltage ratings. 600V or 650V MDmesh devices
provide suitable safety margin for applications such as AC/DC power supplies,
lighting ballasts and display panels. ST recently announced a new
high-efficiency MDmesh family featuring low gate charge for use in resonant
converters such as LCD-TV power supplies (MDmesh II Low Qg).

For further information please refer to www.st.com/pmos

About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.

In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at www.st.com.

For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354

michael.markowitz@st.com
New MOSFETs from STMicroelectronics_IMAGE
New MOSFETs from STMicroelectronics

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Source: STMicroelectronics via Thomson Reuters ONE
HUG#1703750
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