STMicroelectronics Reveals Latest Power Technology for Greener Industry and Infrastructure

STMicroelectronics Reveals Latest Power Technology for Greener Industry and 
Infrastructure 
Advanced Internal Structure of New Power-Transistor Family Delivers
Industry's Best On-State Resistance for Low-Energy, Space-Efficient
Designs 
GENEVA -- (Marketwired) -- 05/22/13 --   STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, has introduced its latest
generation of energy-efficient power devices that reduce the
environmental impact of equipment such as telecom or computing
systems, solar inverters, industrial automation, and automotive
applications. 
ST's new STripFET(TM) VII DeepGATE(TM) MOSFETs deliver the best
conducting efficiency among currently available 80V and 100V devices,
while switching efficiency is also increased. In addition, the
devices help to simplify designs and reduce equipment size and cost
by allowing system power and efficiency targets to be met using fewer
devices in small package sizes. 
The critical advance in ST's STripFET VII DeepGATE technology is an
enhanced MOSFET gate structure, which lowers device on-state
resistance while also reducing internal capacitances and gate charge
for faster, more efficient switching. The devices also have high
avalanche ruggedness to survive potentially damaging hard conditions,
which makes them a strong choice for automotive applications. 
More than 15 STripFET VII DeepGATE devices are available immediately
for sample or production orders, including the STP270N8F7 80V device
and several 100V parts in a choice of TO-220, DPAK, PowerFLAT(TM)
5x6, and 2-lead or 6-lead H2PAK packages. Prices for 1000-piece
orders range from $1.70 for the 100V STD100N10F7 and STL100N10F7 to
$3.80 for the STH310N10F7-2 device. If your company has a high-volume
need, please contact your ST sales office. 
About ST MOSFETs and Voltage Ratings: 
STripFET VII DeepGATE joins ST's extensive portfolio of MOSFET
technologies offering industry-leading efficiency, power density and
ruggedness at key voltage ratings used in various applications.
STripFET VII DeepGATE technology is ideal for systems operating at DC
voltages such as 48V, which is widely used in telecom applications;
devices with 80V or 100V rating have adequate 'safety margin' to
withstand typical over-voltage surges in a 48V system. STripFET VII
DeepGATE is also chosen for highly rugged performance in 12V or 24V
automotive applications. 
Other technologies, such as MDmesh(TM) superjunction technology, are
needed for optimum efficiency at higher voltage ratings. 600V or 650V
MDmesh devices provide suitable safety margin for applications such
as AC/DC power supplies, lighting ballasts and display panels. ST
recently announced a new high-efficiency MDmesh family featuring low
gate charge for use in resonant converters such as LCD-TV power
supplies (MDmesh II Low Qg). 
For further information please refer to www.st.com/pmos 
About STMicroelectronics
 ST is a global leader in the semiconductor
market serving customers across the spectrum of sense and power and
automotive products and embedded processing solutions. From energy
management and savings to trust and data security, from healthcare
and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting
more from technology to get more from life, ST stands for
life.augmented. 
In 2012, the Company's net revenues were $8.49 billion. Further
information on ST can be found at www.st.com. 
New MOSFETs from STMicroelectronics:
http://hugin.info/152740/R/1703750/563203.pdf 
 New MOSFETs from
STMicroelectronics_IMAGE:
http://hugin.info/152740/R/1703750/563204.jpg  
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz@st.com 
 
 
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