TriQuint Accelerates Gallium Nitride Offerings, Releases Significant New Products and Foundry Services

  TriQuint Accelerates Gallium Nitride Offerings, Releases Significant New
  Products and Foundry Services

       See TriQuint at IEEE IMS / MTT-S, Seattle, Washington, June 4-6

IMS2013 International Microwave Symposium

Business Wire

SEATTLE & HILLSBORO, Ore. -- May 22, 2013

TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier
and technology innovator, today announced 15 new gallium nitride (GaN)
amplifiers and transistors along with two new GaN processes. These products
offer performance, size and durability advantages for communications, radar
and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS
/ MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.

James L. Klein, Vice President and General Manager for Infrastructure and
Defense Products, remarked that GaN’s performance advantages are now more
accessible to RF manufacturers thanks to TriQuint’s expansion of process and
product solutions.

“This announcement shows the accelerated pace of TriQuint innovation.
Customers have access to more world-class products in addition to three GaN
processes supported by packaging, assembly and test services. TriQuint is
comprehensively addressing the most demanding RF requirements with the
flexibility to engage customers of all sizes.”

Noted researcher Strategy Analytics foresees significant GaN growth. “While
defense remains the largest GaN revenue source, infrastructure is growing
fast. Sat-Com, power and CATV are ramping to higher revenues. Strategy
Analytics forecasts that the market for GaN microelectronic devices will grow
with a CAAGR of over 34% to approximately $186M by 2015,” said Eric Higham,
Director of Semiconductor Practice.

TriQuint GaN innovation at IMS / MTT-S

TriQuint’s original quarter-micron process is now complemented by a high
voltage variant, TQGaN25HV. The new process extends the drain operating
voltage of 0.25-micron gallium nitride to 48V while delivering higher
breakdown voltage, greater power density and high gain for DC-10 GHz
applications. These advantages enable more rugged devices that can withstand
VSWR mismatches that might destroy other circuits while delivering more RF
output power. A new TriQuint product designed with this process is
T1G4012036-FS/FL, a 120W packaged transistor for radar and infrastructure. It
is nearly two-thirds smaller than similar LDMOS devices. Additional products
built with TQGaN25HV are now available.

TriQuint has taken GaN technology to new limits with its third process,
TQGaN15. It pushes the frequency range of gallium nitride to 40 GHz while
delivering high power density and low-noise performance. This 0.15-micron GaN
on SiC process was used to create TriQuint’s new TGA2594 (4W) and TGA2595
(10W) Ka-band VSAT ground terminal amplifiers. They have up to 35% PAE and are
three times smaller than comparable gallium arsenide (GaAs) solutions.
Additional products built using TQGaN15 are now available.

TriQuint’s product portfolio of new GaN solutions also includes the
ground-breaking TAT9988 direct-to-board MMIC amplifier for CATV and fiber to
the home (FTTH) optic networks. It was created with the second-generation of
TriQuint’s original TQGaN25 process. The TAT9988 leads the industry in gain,
composite distortion performance and surface mount convenience.

TriQuint’s expanded range of GaN innovation is complimented by its integrated
assembly services that include die-level device packaging, X-ray and testing.
TriQuint is also a DoD-accredited ‘Trusted Source’ for GaN and GaAs, which
includes post-processing test and packaging services.

Product Solutions Technical Details: Contact TriQuint for additional


                                              P1dB                NF /     Voltage
               Frequency   Saturated   (Psat)   Gain   PAE    /         Package   Part
                                              /                            Current
                  Range                       OIP3                (dB)     (V /
Description    (GHz)       Power (W)   (dBm)    (dB)   /      mA)       Style     Number
GaN S-Band     3 - 3.5     80          (49) /   22     – /    28 /      Die       TGA2814
PA                                            --                  55       125
GaN S-Band     3 - 3.5     100         (50) /   22     – /    28 /      Die       TGA2813
PA                                            --                  55       150
GaN                                           (45) /              – /      25 /
C/X-Band       6 - 12      30          –        30     30     1100      Die       TGA2590
GaN X-Band     9 - 10      20          (43) /   25     – /    25 /      Die       TGA2624
PA                                            --                  50       150
GaN X-Band     9 - 10      30          (45) /   25     – /    25 /      Die       TGA2622
PA                                            --                  45       250
GaN X-Band     9 - 10      60          (48) /   10     – /    24 /      Die       TGA2312-FL
PA                                            --                  35       2400
GaN X-Band     10 - 11     30          (45) /   25     – /    25 /      Die       TGA2623
PA                                            --                  45       250
GaN X-Band     10 - 11     16          (42) /   25     – /    25 /      Die       TGA2625
PA                                            --                  45       150
GaN Ka-Band    27 - 31     5           (37) /   19     – /    20 /      Die       TGA2594
PA                                            --                  30       280
GaN Ka-Band    27 - 31     10          (40) /   17     – /    20 /      Die       TGA2595
PA                                            --                  25       560

Driver Amplifier

                                              P1dB                NF /     Voltage
               Frequency   Saturated   (Psat)   Gain   PAE    /         Package   Part
                                              /                            Current
                  Range                       OIP3                (dB)     (V /
Description    (GHz)       Power (W)   (dBm)    (dB)   /      mA)       Style     Number
GaN 2W         2 - 6       2           33 /     23     -- /   25 /      Die       TGA2597
Driver PA                                     --                  30       170

Low Noise Amplifiers

                                P1dB                        Voltage
               Frequency   /       Gain   NF     /         Package   Part
                                IIP3                        Current
Description    Range       (dBm)   (dB)   (dB)   (V /      Style     Number
                  (GHz)                                     mA)
GaN LNA        2 - 6       25      25     1      10 /      Die       TGA2611
GaN LNA        6 - 12      25      25     1.5    10 /      Die       TGA2612

Discrete RF Power Transistors

                                P1dB                        Voltage
               Frequency   (Psat)   Gain   DE    /         Package   Part
Description    Range       (dBm)    (dB)   (%)   (V /      Style     Number
                  (GHz)                                     mA)
GaN 120W:      DC - 3.5    120      13     52    36 /      Ceramic   T1G4012036-FS
EAR99                                                       360                     / -FL
GaN 10W:       DC - 6      40       16     53    32 / 50   5x5 QFN   T1G6001032-SM

TriQuint will detail advances of its GaN product and process solutions in
Booth 530 on June 4 and 5 at 11:00AM and 1:00PM each day. Hear about
TriQuint’s 15 new GaN products, new foundry services and its ‘Trusted Source’
DoD-accredited programs. Contact TriQuint to arrange a meeting. Register to
receive product updates and TriQuint’s newsletter.


This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains
forward-looking statements made pursuant to the Safe Harbor provisions of the
Private Securities Litigation Reform Act of 1995. Readers are cautioned that
forward-looking statements involve risks and uncertainties. The cautionary
statements made in this press release should be read as being applicable to
all related statements wherever they appear. Statements containing such words
as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading
supplier’, or similar terms are considered to contain uncertainty and are
forward-looking statements. A number of factors affect TriQuint’s operating
results and could cause its actual future results to differ materially from
any results indicated in this press release or in any other forward-looking
statements made by, or on behalf of, TriQuint including, but not limited to:
those associated with the unpredictability and volatility of customer
acceptance of and demand for our products and technologies, the ability of our
production facilities and those of our vendors to meet demand, the ability of
our production facilities and those of our vendors to produce products with
yields sufficient to maintain profitability, as well as the other “Risk
Factors” set forth in TriQuint’s most recent 10-Q report filed with the
Securities and Exchange Commission. This and other reports can be found on the
SEC web site, A reader of this release should understand that
these and other risks could cause actual results to differ materially from
expectations expressed / implied in forward-looking statements.


Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global
provider of innovative RF solutions and foundry services for the world’s top
communications, defense and aerospace companies. People and organizations
around the world need real-time, all-the-time connections; TriQuint products
help reduce the cost and increase the performance of connected mobile devices
and the networks that deliver critical voice, data and video communications.
With the industry’s broadest technology portfolio, recognized R&D leadership,
and expertise in high-volume manufacturing, TriQuint creates standard and
custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface
acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has
ISO9001-certified manufacturing facilities in the U.S., production in Costa
Rica, and design centers in North America and Germany. For more information,

TriQuint: Reach Further, Reach Faster™

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TriQuint Semiconductor, Inc.
Media Contact:
Mark W. Andrews, +1-407-884-3404
Strategic Marketing Comm. Manager
Mobile: +1 407 353 8727
Infrastructure & Defense Products:
David Lacinski, +1-972-994-8487
Senior Director, Strategy & Business Development
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