Xilinx and Sumitomo Electric Collaborate on Smarter Solutions that Reduce Network CapEx and OpEx Costs

  Xilinx and Sumitomo Electric Collaborate on Smarter Solutions that Reduce
                         Network CapEx and OpEx Costs

Using Xilinx radio SmartCORE IP and Sumitomo Electric GaN power amplifier
transistors helps customers achieve greater than 50 percent power efficiency

PR Newswire

SAN JOSE, Calif., May 21, 2013

SAN JOSE, Calif., May 21, 2013 /PRNewswire/ -- Xilinx, Inc. (NASDAQ: XLNX)
today announced that Xilinx and Sumitomo Electric Industries, Ltd. are
collaborating to bring smarter solutions to market. These solutions reduce
CapEx and OpEx costs through the use of Sumitomo Electric's Gallium Nitride
(GaN) power amplifier transistors and Xilinx® SmartCORE™ IP that result in
higher radio unit efficiencies. Wireless system designers using Xilinx's
SmartCORE IP can scale to support small cells to high-end macro cells, as well
as active antenna systems (AAS), offering customers time-to-market advantages,
lower development costs, high efficiency, lower SWaP (size, weight and power),
and lower total cost.

(Logo: http://photos.prnewswire.com/prnh/20020822/XLNXLOGO)

Xilinx radio SmartCORE IP such as Digital Up and Down Converters (DUC/DDC),
Crest Factor Reduction (CFR) and Digital Pre-Distortion (DPD) IP cores,
coupled with generation-ahead 28nm Zynq®-7000 All Programmable SoCs, offers
customers a single-chip implementation of the entire digital radio in addition
to board level control and calibration typically found in an external

"By collaborating with Sumitomo Electric, we are able to provide our customers
with a smarter solution that is scalable to support the needs of broadband
microcells, and up to the highest performance multi-antenna broadband macros
and AAS installations," said David Hawke, director of wireless product
marketing at Xilinx. "Additionally, our radio IP, coupled with Sumitomo
Electric's power amplifier transistors, allow OEMs to design equipment that
ultimately save operator CapEx and OpEx, as well as reduce device cost and

The high breakdown voltage and saturation velocity characteristics of GaN
devices make it an ideal candidate for high-power and high-temperature base
station applications. The higher power density of GaN also allows for smaller
devices, reducing size and cost.

"Sumitomo Electric's GaN-based power devices combined with Xilinx's SmartCORE
IP will demonstrate the world's next generation of highly efficient solutions
for the wireless market," said Nobu Kuwata, general manager of Technology and
Marketing Strategy Department at Sumitomo Electric Device Innovations, Inc.
"Sumitomo Electric is committed to developing the products necessary to meet
the requirements of our customers offering smarter solutions."

Please visit the Sumitomo Electric booth (#2120) at the International
Microwave Symposium 2013 (IMS) in Seattle on June 4-6, 2013 to see a live
demonstration of the Sumitomo Electric GaN and Xilinx DPD IP core.


Visit the Sumitomo Electric website for technical detail and purchase
information for its GaN power amplifier transistors. To learn more about the
Xilinx radio IP, visit: http://www.xilinx.com/esp/wireless/refdes_listing.htm.

About Xilinx

Xilinx is the world's leading provider of All Programmable FPGAs, SoCs and 3D
ICs. These industry-leading devices are coupled with a next-generation design
environment and IP to serve a broad range of customer needs, from programmable
logic to programmable systems integration. For more information, visit



Xilinx, the Xilinx logo, Artix, ISE, Kintex, Spartan, Virtex, Vivado, Zynq,
and other designated brands included herein are trademarks of Xilinx in the
United States and other countries. All other trademarks are the property of
their respective owners.

Silvia E. Gianelli
(408) 626-4328

SOURCE Xilinx, Inc.

Website: http://www.xilinx.com
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