"Places2Be" Project to Boost European Leadership Around FD-SOI -- The Faster, Cooler, Simpler Chip Technology

"Places2Be" Project to Boost European Leadership Around FD-SOI -- The Faster, 
Cooler, Simpler Chip Technology 
BRUSSELS, BELGIUM -- (Marketwired) -- 05/21/13 --  STMicroelectronics

--  3-year, EUR 360M project involves 19 partners across Europe, led by
--  2 FD-SOI manufacturing pilot lines to be located in Grenoble and
--  Places2Be is supported by the ENIAC JU and the National Public

The launch of Places2Be, a 3-year, EUR 360M advanced-technology
pilot-line project to support the industrialization of Fully-Depleted
Silicon-On-Insulator (FD-SOI) microelectronics technology was
announced today by a group of 19 leading European companies and
academic institutions.  
Led by STMicroelectronics (NYSE: STM), a global semiconductor leader
serving customers across the spectrum of electronics applications,
Places2Be ("Pilot Lines for Advanced CMOS Enhanced by SOI in 2x
nodes, Built in Europe") aims to support the deployment of a FD-SOI
pilot line at 28nm and the subsequent node, as well as a dual source
that will enable volume manufacturing in Europe. Places2Be will drive
the creation of a European microelectronics design ecosystem using
this FD-SOI platform and explore the path towards the next step for
this technology (14/10nm).  
FD-SOI is a low-power, high-performance next-generation alternative
to conventional ("bulk") silicon and FinFET technologies. The first
FD-SOI systems-on-chips are expected to be used in consumer
electronics, high-performance computing and networking.  
With a budget of nearly EUR 360M, the participation of 19 partners
from 7 countries, and the planned involvement of about 500 engineers
over three years across Europe, Places2Be is the largest ENIAC Joint
Undertaking project to date and is supported as well by the National
Public Authorities in the participating countries. Places2Be is one
of the key enabling technologies (KETs) pilot-line projects
contracted by the ENIAC JU to develop technologies and application
areas with substantial societal impact.  
The FD-SOI manufacturing sources for the project are located in each
of the two largest European microelectronics clusters: the pilot line
in STMicroelectronics' Crolles fab (near Grenoble, France) and the
dual source in GlobalFoundries' fab 1 in Dresden (Germany).  
"The Places2Be project will reinforce the ecosystems of both Grenoble
and Dresden clusters, while also positively impacting the whole value
chain of microelectronics in Europe -- large companies, SMEs,
start-ups and research organizations -- beyond the direct impact
induced by the material and IP investments," declared Francois Finck,
Director of ST's R&D cooperative programs and project coordinator.  
Note to editors 
Places2Be members (in alphabetic order) 

--  ACREO Swedish ICT AB, Sweden
--  Adixen Vacuum Products, France
--  Axiom IC, Netherlands
--  Bruco Integrated Circuits, Netherlands
--  Commissariat a l'energie atomique et aux energies
    alternatives, France
--  Dolphin Integration, France
--  Ericsson AB, Sweden
--  eSilicon Romania S.r.l., Romania
--  Forschungzentrum Juelich Gmbh, Germany
--  GlobalFoundries Dresden, Germany
--  Grenoble INP, France
--  IMEC Interuniversitair Micro-Electronica Centrum vzw, Belgium
--  Ion Beam Services, France
--  Mentor Graphics France Sarl, France
--  SOITEC SA, France
--  ST-Ericsson
--  STMicroelectronics (Crolles2 SAS, SA, Grenoble SAS), France
--  Universite Catholique de Louvain, Belgium
--  University of Twente, Netherlands

Countries involved: 

--  Belgium
--  Finland
--  France
--  Germany
--  Romania
--  Sweden
--  The Netherlands

About FD-SOI
 FD-SOI stands for "Fully-Depleted Silicon-On-Insulator."
This technology improves the electrostatic control of the transistor
channel, improving transistor performance and power efficiency. More
precisely Places2Be uses Ultra-Thin Body and Buried oxide (UTBB)
FD-SOI, which allows the dynamic tuning of transistor performance,
from low power to high speed, during operation. A video introduction
to this technology is available on YouTube:
About the ENIAC JU
 The ENIAC Joint Undertaking (JU) is a
public-private partnership on nanoelectronics bringing together the
ENIAC member States, the European Union, and AENEAS (an association
representing European R&D actors in this field).  
It coordinates research activities through competitive calls for
proposals to enhance the further integration and miniaturization of
devices, and increase their functionalities. It shall deliver new
materials, equipment and processes, new architectures, innovative
manufacturing processes, disruptive design methodologies, new
packaging and 'systemising' methods. It will drive and be driven by
innovative high-tech applications in communication and computing,
transport, health care and wellness, energy and environmental
management, security and safety, and entertainment. 
The ENIAC JU was set up in February 2008 and will allocate grants
throughout 2013. The projects selected for funding shall be executed
till 31 December 2017. The total value of the R&D activities
generated through ENIAC JU is estimated at EUR 3B. 
About STMicroelectronics
 ST is a global leader in the semiconductor
market serving customers across the spectrum of sense and power and
automotive products and embedded processing solutions. From energy
management and savings to trust and data security, from healthcare
and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting
more from technology to get more from life, ST stands for
In 2012, the Company's net revenues were $8.49 billion. Further
information on ST can be found at www.st.com  
Places2Be: http://hugin.info/152740/R/1703181/562928.pdf  
For further information, please contact:
Alexis Breton
Manager, International Media Relations 
Tel: +33 6 5916 7908
Nelly Dimey 
Director, Corporate Media and Public Relations
Tel: +33 1 58 07 77 85
Elodie Michaud
Communication Officer
Tel : +33 1 40 64 45 80
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