STMicroelectronics Extends High-Efficiency Power Family Using New Energy-Saving Package

STMicroelectronics Extends High-Efficiency Power Family Using New Energy-Saving 
Package 
Innovative 4-Lead Package of Latest MDmesh(TM) V Super-Junction
MOSFETs Adds Dedicated Control Input for Increased Switching
Efficiency 
GENEVA -- (Marketwired) -- 05/06/13 --   STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, has introduced the first
MDmesh(TM) V Super-Junction MOSFET featuring a new package technology
that increases the efficiency of power circuitry in equipment such as
white goods, televisions, PCs, telecom, and server switched-mode
power supplies. 
The new TO247-4 4-lead package provides a direct source connection
used only for switching control, whereas conventional packages
provide one connection for both switching and power. The extra lead
increases switching efficiency, which reduces energy losses and
allows higher-frequency operation for more compact power supplies. 
ST co-developed the package with Infineon, which is also introducing
its own new Super-Junction devices, providing second-source
flexibility for users. "The TO247-4 is highly cost-effective and
requires only minimal modification of the PCB layout when replacing a
standard TO-247 device, which simplifies adoption in power systems,"
commented Maurizio Giudice, Marketing Director, Power Transistor
Division, STMicroelectronics. "Our new MDmesh devices using this
package will enable better environmental performance of end equipment
by improving energy efficiency in active modes." 
The TO247-4 package features an innovative internal construction
implementing a Kelvin connection to the source. This connection
bypasses the common source inductance of the main power connection,
enabling up to 60% of switching losses to be eliminated and allowing
designers to use higher switching frequencies that require smaller
filtering components. Combining this new package with ST's MDmesh
Super-Junction technology, which achieves one of the highest
conduction efficiencies per silicon area, delivers the best possible
overall energy savings. 
The device introduced today is the STW57N65M5-4. As the first MDmesh
device released in the TO247-4, it will enable increased energy
efficiency in active Power-Factor Correction (PFC) circ
uits and
full-bridge or half-bridge power converters for a wide variety of
consumer and industrial electronic products. 
Additional features of STW57N65M5-4 in TO247-4: 


 
--  High noise immunity, lowering susceptibility to Electro-Magnetic
    Interference (EMI)
    
    
--  Increased voltage rating for greater safety margins
    
    
--  High dv/dt capability for enhanced reliability
    
    
--  100% avalanche tested, enabling use in rugged designs

  
The STW57N65M5-4 is in mass production now, priced from $10.00 for
orders over 1,000 pieces. 
For further information please refer to http://www.st.com/to247-4-pr 
About STMicroelectronics
 ST is a global leader in the semiconductor
market serving customers across the spectrum of sense and power and
automotive products and embedded processing solutions. From energy
management and savings to trust and data security, from healthcare
and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting
more from technology to get more from life, ST stands for
life.augmented. 
In 2012, the Company's net revenues were $8.49 billion. Further
information on ST can be found at www.st.com. 
ST MDMesh MOSFET in TO-247:
http://hugin.info/152740/R/1699392/560560.pdf 
 ST MDMesh MOSFET in
TO-247_IMAGE: http://hugin.info/152740/R/1699392/560561.jpg  
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz@st.com 
 
 
Press spacebar to pause and continue. Press esc to stop.