STMicroelectronics : STMicroelectronics Extends High-Efficiency Power Family Using New Energy-Saving Package

 STMicroelectronics : STMicroelectronics Extends High-Efficiency Power Family
                       Using New Energy-Saving Package

 Innovative 4-lead package of latest MDmesh(TM) V Super-Junction MOSFETs adds
          dedicated control input for increased switching efficiency

Geneva, May 6, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor
leader serving customers across the spectrum of electronics applications, has
introduced the first MDmesh(TM) V Super-Junction MOSFET featuring a new
package technology that increases the efficiency of power circuitry in
equipment such as white goods, televisions, PCs, telecom, and server
switched-mode power supplies.

The new TO247-4 4-lead package provides a direct source connection used only
for switching control, whereas conventional packages provide one connection
for both switching and power. The extra lead increases switching efficiency,
which reduces energy losses and allows higher-frequency operation for more
compact power supplies.

ST co-developed the package with Infineon, which is also introducing its own
new Super-Junction devices, providing second-source flexibility for users.
"The TO247-4 is highly cost-effective and requires only minimal modification
of the PCB layout when replacing a standard TO-247 device, which simplifies
adoption in power systems," commented Maurizio Giudice, Marketing Director,
Power Transistor Division, STMicroelectronics. "Our new MDmesh devices using
this package will enable better environmental performance of end equipment by
improving energy efficiency in active modes."

The TO247-4 package features an innovative internal construction implementing
a Kelvin connection to the source. This connection bypasses the common source
inductance of the main power connection, enabling up to 60% of switching
losses to be eliminated and allowing designers to use higher switching
frequencies that require smaller filtering components. Combining this new
package with ST's MDmesh Super-Junction technology, which achieves one of the
highest conduction efficiencies per silicon area, delivers the best possible
overall energy savings.

The device introduced today is the STW57N65M5-4. As the first MDmesh device
released in the TO247-4, it will enable increased energy efficiency in active
Power-Factor Correction (PFC) circuits and full-bridge or half-bridge power
converters for a wide variety of consumer and industrial electronic products.

Additional features of STW57N65M5-4 in TO247-4:

  oHigh noise immunity, lowering susceptibility to Electro-Magnetic
    Interference (EMI)
  oIncreased voltage rating for greater safety margins
  oHigh dv/dt capability for enhanced reliability
  o100% avalanche tested, enabling use in rugged designs

The STW57N65M5-4 is in mass production now, priced from $10.00 for orders over
1,000 pieces.

For further information please refer to

About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.

In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at

For Press Information Contact:
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
ST MDMesh MOSFET in TO-247


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Source: STMicroelectronics via Thomson Reuters ONE
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