TriQuint Achieves Breakthrough GaN-on-Diamond Results

  TriQuint Achieves Breakthrough GaN-on-Diamond Results

     Enables high performance, low heat operation, significantly smaller

Business Wire

HILLSBORO, Ore. & RICHARDSON, Texas -- April 30, 2013

TriQuint Semiconductor, Inc. (NASDAQ:TQNT), a leading RF solutions supplier
and technology innovator, today announced that it has produced the industry’s
first gallium nitride (GaN) transistors using GaN-on-diamond wafers that
substantially reduce semiconductor temperatures while maintaining high RF
performance. TriQuint’s breakthrough technology enables new generations of RF
amplifiers up to three times smaller or up to three times the power of today’s
GaN solutions.

TriQuint received a Compound Semiconductor Industry Award in March commending
its new GaN-on-diamond achievements. TriQuint’s James L. Klein, Vice President
and General Manager for Infrastructure and Defense Products, remarked that
unlocking the true potential of high-efficiency GaN circuits will depend on
achievements like those of TriQuint’s advanced research and development

Operating temperature largely determines high performance semiconductor
reliability. It’s especially critical for GaN devices that are capable of very
high power densities. “By increasing the thermal conductivity and reducing
device temperature, we are enabling new generations of GaN devices that may be
much smaller than today’s products. This gives significant RF design and
operational benefits for our commercial and defense customers,” he said.

TriQuint demonstrated its new GaN-on-diamond, high electron mobility
transistors (HEMT) in conjunction with partners at the University of Bristol,
Group4 Labs and Lockheed Martin under the Defense Advanced Research Projects
Agency’s (DARPA) Near Junction Thermal Transport (NJTT) program.

NJTT is the first initiative in DARPA's new ‘Embedded Cooling’ program that
includes the ICECool Fundamentals and ICECool Applications research and
development engagements. NJTT focuses on device thermal resistance 'near the
junction' of the transistor. Thermal resistance inside device structures can
be responsible for more than 50% of normal operational temperature increases.
TriQuint research has shown that GaN RF devices can operate at a much higher
power density and in smaller sizes, through its highly effective thermal
management techniques.

TriQuint’s New GaN Achievement in Detail

TriQuint’s breakthrough involves the successful transfer of a semiconductor
epitaxial overlay onto a synthetic diamond substrate, providing a high thermal
conductivity and low thermal boundary resistance, while preserving critical
GaN crystalline layers. This achievement is the first to demonstrate the
feasibility of GaN-on-diamond HEMT devices. Results to date indicate TriQuint
achieved the primary NJTT goal of a three-fold improvement in heat dissipation
while preserving RF functionality; this achievement supports reducing power
amplifier size or increasing output power by a factor of three. Additional
fabrication improvements and extensive device testing are underway to optimize
the epitaxial layer transfer process and fully characterize enhancements that
can be achieved in these new HEMT devices.

TriQuint Gallium Nitride Product Innovation, Honors and Resources
Heritage               Leader in defense and commercial GaN research since
Research               Leader in performance and reliability GaN development
                        Massachusetts Institute of Technology, University of
University Partners    Notre Dame, University of Colorado at Boulder, and
                        University of Bristol
The Global GaN Impact  Strategy Analytics recognizes TriQuint’s GaN R&D / GaN
                        Product Innovation
Active R&D programs    DARPA NEXT program for highly complex, high frequency
                        GaN MMICs
                        Defense Production Act (DPA) Title III program for GaN
                      on SiC; Radar and EW MMICs: Air Force and Navy
                        DARPA Microscale Power Conversion program to develop
                      ultra-fast GaN power switch technology that is
                        integrated into next-generation amplifiers
                        DARPA Near Junction Thermal Transport (NJTT) GaN
                      program to increase circuit power handling
                        capabilities through enhanced thermal management
                        Army Research Laboratory (ARL) Cooperative Research
                      and Development Agreement (CRADA) to jointly develop
                        advanced GaN circuits
                        2013 CS Industry Award for DARPA NJTT program; 2012 CS
Recent Honors          Industry Award for DARPA MPC program; 2011 CS Industry
                        Award for DARPA NEXT
GaN Products           Wide selection of innovative GaN amplifiers,
                        transistors and switches
GaN Foundry            0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz

For more information about TriQuint defense/aerospace products and foundry
services, including GaN-based amplifiers, transistors, high-power switches and
integrated assembly capabilities, visit us at, or
register to receive product updates and TriQuint’s newsletter.


This TriQuint Semiconductor, Inc. (NASDAQ:TQNT) press release contains
forward-looking statements made pursuant to the Safe Harbor provisions of the
Private Securities Litigation Reform Act of 1995. Readers are cautioned that
forward-looking statements involve risks and uncertainties. The cautionary
statements made in this press release should be read as being applicable to
all related statements wherever they appear. Statements containing such words
as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading
supplier’, or similar terms are considered to contain uncertainty and are
forward-looking statements. A number of factors affect TriQuint’s operating
results and could cause its actual future results to differ materially from
any results indicated in this press release or in any other forward-looking
statements made by, or on behalf of, TriQuint including, but not limited to:
those associated with the unpredictability and volatility of customer
acceptance of and demand for our products and technologies, the ability of our
production facilities and those of our vendors to meet demand, the ability of
our production facilities and those of our vendors to produce products with
yields sufficient to maintain profitability, as well as the other “Risk
Factors” set forth in TriQuint’s most recent 10-Q report filed with the
Securities and Exchange Commission. This and other reports can be found on the
SEC web site, A reader of this release should understand that
these and other risks could cause actual results to differ materially from
expectations expressed / implied in forward-looking statements.


Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global
provider of innovative RF solutions and foundry services for the world’s top
communications, defense and aerospace companies. People and organizations
around the world need real-time, all-the-time connections; TriQuint products
help reduce the cost and increase the performance of connected mobile devices
and the networks that deliver critical voice, data and video communications.
With the industry’s broadest technology portfolio, recognized R&D leadership,
and expertise in high-volume manufacturing, TriQuint creates standard and
custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface
acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has
ISO9001-certified manufacturing facilities in the U.S., production in Costa
Rica, and design centers in North America and Germany. For more information,

TriQuint: Reach Further, Reach Faster™

    Distribution Statement “A” (Approved for Public Release, Distribution


TriQuint Semiconductor, Inc.
Media Contact:
Strategic Marketing Communications Mgr.
Mark W. Andrews, +1-407-884-3404
Mobile: +1-407-353-8727
Infrastructure & Defense Products:
Research Sr. Director
Douglas H. Reep, PhD, +1-972-994-8323
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