Toshiba Launches 600V System Super Junction MOSFET DTMOSIV High-Speed Diode Series

  Toshiba Launches 600V System Super Junction MOSFET DTMOSIV High-Speed Diode
  Series

Reduces 30% of R[ON] and achieves reverse recovery time of one-third of
existing products

Business Wire

TOKYO -- April 03, 2013

Toshiba Corporation (TOKYO: 6502) has launched high-speed diodes based on the
4th generation 600V system super junction MOSFET "DTMOSIV" series. Using the
latest single epitaxial process, the new series has reduced the R[ON]•A
(On-resistance per area) by approximately 30%^(Note1) compared to existing
products, to achieve the leading level in the industry. ^(Note2) Also,
high-speed parasitic diodes achieve a reverse recovery time of approximately
one-third that of existing products^(Note3), reducing loss and contributing to
improved power efficiency.

Toshiba: 600V System Super Junction MOSFET DTMOSIV High-Speed Diode Series
(Left to right; TO-220SIS ...

Toshiba: 600V System Super Junction MOSFET DTMOSIV High-Speed Diode Series
(Left to right; TO-220SIS package and TO-3P(N) package) (Photo: Business Wire)

(Note1) Compared to the previous "DTMOSIII" series. Toshiba data.
(Note2) As of April 2, 2013. Toshiba data.
(Note3) Compared to the existing product "TK16A60W." As of April 3, 2013.
Toshiba data.

Applications
Switching power supplies, micro inverters, adaptors and photovoltaic inverters

Main Features
1. 30% reduction in R[ON]•A compared with existing products (DTMOSIII series).
2. High-speed parasitic diodes achieve a reverse recovery time of
approximately one-third that of existing products.
3. Use of the single epitaxial process secures small increases in
ON-resistance and reverse recovery times at high temperatures.
4. Wide line-up for ON-resistance (0.65 to 0.074Ω)
5. Wide line-up of packages

                                                              
Main Specifications
             Absolute maximum   R[DS(ON)]    Q[g]   C[iss]   t[rr]
Part         rating             Max (Ω)      Typ.   Typ.     Typ.    Package
number       V[DSS]    I[D]    V[GS]=10V    (nC)   (pF)     (ns)
             (V)        (A)
TK16A60W5    600        15.8    0.23         43     1350     100     TO-220SIS
TK31J60W5    600        30.8    0.099        105    3000     135     TO-3P(N)
TK39J60W5   600       38.8   0.074       135   4100    150    TO-3P(N)
                                                                     

*Follow this link for more on this product.
http://www.semicon.toshiba.co.jp/eng/product/transistor/selection/topics/1267582_2470.html

Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3416


Information in this document, including product prices and specifications,
content of services and contact information, is current on the date of the
announcement but is subject to change without prior notice.


About Toshiba

Toshiba is a world-leading diversified manufacturer, solutions provider and
marketer of advanced electronic and electrical products and systems. Toshiba
Group brings innovation and imagination to a wide range of businesses: digital
products, including LCD TVs, notebook PCs, retail solutions and MFPs;
electronic devices, including semiconductors, storage products and materials;
industrial and social infrastructure systems, including power generation
systems, smart community solutions, medical systems and escalators &
elevators; and home appliances.

Toshiba was founded in 1875, and today operates a global network of more than
550 consolidated companies, with 202,000 employees worldwide and annual sales
surpassing 6.1 trillion yen (US$74 billion). Visit Toshiba's web site at
www.toshiba.co.jp/index.htm

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Contact:

Toshiba Corporation
Semiconductor & Storage Products Company
Koji Takahata, +81-3-3457-4963
semicon-NR-mailbox@ml.toshiba.co.jp