Peregrine Semiconductor Unveils STeP8 UltraCMOS® Process Technology

  Peregrine Semiconductor Unveils STeP8 UltraCMOS® Process Technology

     Newest generation enables unmatched performance in RF Front End ICs

Mobile World Congress 2013

Business Wire

SAN DIEGO -- February 25, 2013

Peregrine Semiconductor Corporation (NASDAQ: PSMI), a fabless provider of
high-performance radio frequency integrated circuits (RFICs), today announced
from Mobile World Congress in Barcelona the latest version of UltraCMOS^®
process technology—Semiconductor Technology Platform 8 (STeP8). STeP8
technology shows a 36% improvement in R[on]C[off] performance over STeP5
technology announced just one year ago—dramatically improving the linearity,
insertion loss, and isolation capabilities of Peregrine’s RFIC products.
Flagship devices utilizing the latest generation of the UltraCMOS technology
include a HaRP™  enhanced SP16T RF switch and a highly integrated SP4T DuNE™
enhanced antenna-tuning switch, both of which are available for sampling. The
initial STeP8-based SP16T RF switch demonstrates a nearly 40% shrink over the
industry-leading footprint of the STeP-5-based counterpart.* The SP4T
antenna-tuning switch has on-resistance of 1.5 Ohms, and insertion loss
performance of 0.15 dB matched at 900 MHz—a 66% improvement over the previous
offering from Peregrine.*

“As a fabless semiconductor company, our unique combination of process
architecture, circuit designs, and device modeling has enabled an accelerated
technology roadmap,” said Mark Miscione, vice president of RF Technology
Solutions for Peregrine Semiconductor. “These results further validate
Peregrine’s expertise in advanced RF silicon-on-insulator process development
and its commitment to integration and high-performance at the RF Front End.”

The 4G LTE network has introduced significant challenges to the RF Front End
of smart phones, including a fragmented RF spectrum, which causes co-existence
issues between bands and other connectivity standards such as GPS, WiFi^®, and
Bluetooth^®. The lack of global frequency alignment has resulted in more than
40 LTE bands now identified.

“Given the demanding RF conditions in which mobile devices must operate,
demonstrating the ability to meet next generation requirements for high
linearity, low loss and optimization is critical for success in the RF
components market,” said Francis Sideco, senior principal analyst, consumer
electronics and communications technologies at IHS. “Companies who are able to
deliver innovation along those lines are strongly positioned to outpace their
competitors.”

To ensure consistent, reliable operation within the LTE environment, mobile
wireless device designers are required to incorporate high performance
components into the RF Front End while maintaining a small form factor.
Highly-integrated RF Front End modules such as those that UltraCMOS STeP8
enables address these demands by providing an ideal combination of high
linearity and low insertion loss in a single, monolithically-integrated
device.

“Peregrine continues to be the right choice when we look for RF innovation for
the RF Front-End modules we deliver to our demanding global OEMs,” said Norio
Nakajima, vice president of the communication business unit at MuRata
Manufacturing Co., Ltd. “Their ability to engineer leading-edge technology
like STeP8, and rapidly adjust to market dynamics, makes them our ideal
partner.”

Peregrine is sampling the STeP8-based SP16T RF switch and SP4T antenna-tuning
switch to select customers today; further interest should be directed to
Peregrine’s global direct sales management. For more information, visit
http://www.psemi.com.

About Peregrine Semiconductor

Peregrine Semiconductor (NASDAQ: PSMI) is a fabless provider of
high-performance radio frequency integrated circuits (RFICs). Our solutions
leverage our proprietaryUltraCMOS^®technology, an advanced RF
Silicon-On-Insulator process. Our products deliver what we believe is an
industry-leading combination of performance and monolithic integration, and
target a broad range of applications in the aerospace and defense, broadband,
industrial, mobile wireless device, test and measurement equipment, and
wireless infrastructure markets. Additional information is available on the
Company’s website athttp://www.psemi.com.

     The Peregrine Semiconductor name, logo, and UltraCMOS are registered
   trademarks, and DuNE, and HaRP are trademarks of Peregrine Semiconductor
Corporation in the U.S.A., and other countries. All other trademarks mentioned
             herein are the property of their respective owners.

Tags/Keywords: silicon-on-sapphire technology, silicon-on-insulator,
UltraCMOS, antenna tuning, 4G LTE, smartphone, semiconductor technology
process, compound semiconductor technology

*Based upon Peregrine Semiconductor-supplied data.

Contact:

Peregrine Semiconductor Corporation
Michelle Ragsdale
Sr. Public Relations Generalist
858-795-0154
mragsdale@psemi.com
 
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