STMicroelectronics 28nm FD-SOI Technology Hits 3GHz Operating Speed

STMicroelectronics 28nm FD-SOI Technology Hits 3GHz Operating Speed 
Momentum Builds as Fast, Simple and Cool Technology Proves Its
GENEVA -- (Marketwire) -- 02/20/13 --   STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, announced today the achievement
of another major milestone in its testing of its 28nm FD-SOI
Technology Platform. Following the Company's December announcement of
the successful manufacturing of System on Chip (SoC) integrated
circuits, ST today announced that application-processor engine
devices manufactured at the Company's Crolles, France fab, were
capable of operating at 3GHz with even greater power efficiency at a
given operating frequency than alternate technologies.  
This announcement follows on the heels of recent announcements from
other organizations to utilize FD-SOI technologies. Moore's Law --
the observation that the number of transistors on a chip doubled
about every two years -- has driven the semiconductor industry over
the past 50 years to shrink the size of the transistors, which are
essentially miniature on/off switches. The increased density from
these size reductions have given consumers the explosion of new and
more exciting features at lower-cost that we've come to expect. In
parallel, these new features are able to operate at clock speeds that
allow the phones to respond to your commands -- by keypad, touchpad,
and now voice -- almost before you finish expressing the command.  
Now, as those transistors shrink to nanoscale dimensions where about
450 transistors can fit within the diameter of a human hair[1],
physics are challenging the traditional high-speed and low-power
advantages of planar CMOS technology manufactured on bulk silicon
wafers. FD-SOI technology is a major breakthrough in the pursuit of
miniaturization of electronic circuits, and the achievement of 3GHz
operating speed for an application-processor engine presages the
adoption of FD-SOI in portable equipment, digital still cameras,
gaming and ASICs for a range of applications. Of the next-generation
process technologies, FD-SOI alone has proven its ability to meet the
industry's highest performance and lowest power demands that are
vital to delivering graphics and 
multimedia that amaze without
sacrificing battery life. 
"As we had anticipated, FD-SOI is proving to be fast, simple and
cool; we had fully expected to see 3GHz operating speeds, the design
approach is very consistent with what we had been doing in bulk CMOS,
and, with the benefits of fully depleted channels and back biasing,
the low-power requirements are also meeting our expectations," said
Jean-Marc Chery, Executive Vice President, General Manager Digital
Sector, and Chief Technology and Manufacturing Officer of
Reinforcing the point of simplicity, ST has found porting Libraries
and Physical IPs from 28nm Bulk CMOS to 28nm FD-SOI to be
straightforward, and the process of designing digital SoCs with
conventional CAD tools and methods in FD-SOI to be identical to Bulk,
due to the absence of MOS-history-effect. FD-SOI enables production
of highly energy-efficient devices, with the dynamic body-bias
allowing instant switch to high-performance mode when needed and
return to a very-low-leakage state for the rest of the time -- all in
a totally transparent fashion for the Application Software, Operating
System, and the Cache Systems. Finally, FD-SOI can operate at
significant performance at low voltage with superior energy
efficiency versus Bulk CMOS. 
ST will be demonstrating the FD-SOI technology at its booth (Hall 7
E110) at Mobile World Congress in Barcelona, Feb 25-28.  
About STMicroelectronics 
 ST is a global leader in the semiconductor
market serving customers across the spectrum of sense and power
technologies and multimedia convergence applications. From energy
management and savings to trust and data security, from healthcare
and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting
more from technology to get more from life, ST stands for
In 2012, the Company's net revenues were $8.49 billion. Further
information on ST can be found at  
[1] FD-SOI transistors have a drawn channel length of 28nm and a
pitch (transistor to transistor) of 113nm, allowing almost 450
transistors to fit across a 50,000nm-diameter human hair.  
ST 28nm FD-SOI Technology Hits 3GHz_FINAL:  
For Press Information Contact:
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354 
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