Micron Introduces Industry's Smallest 128-Gigabit NAND Flash Device
Company Broadens Flash Component Portfolio With 20-Nanometer Triple-Level-Cell
*New 128Gb TLC NAND device is more than 25% smaller than company's
same-capacity MLC NAND device
*Utilizes Micron's award-winning 20-nanometer (nm) process technology
*Targeted at cost-competitive removable storage applications, including
flash cards and USB drives
BOISE, Idaho, Feb. 14, 2013 (GLOBE NEWSWIRE) -- Micron Technology, Inc.
(Nasdaq:MU) today introduced the industry's smallest 128-gigabit (Gb) NAND
flash memory device utilizing its award-winning 20-nanometer (nm) process
technology. The new 128Gb device stores three bits of information per cell,
called triple-level-cell (TLC), creating a highly compact storage solution.
Measuring 146mm^2, the new 128Gb TLC device is more than 25 percent smaller
than the same capacity of Micron's 20nm multi-level-cell (MLC) NAND device.
The 128Gb TLC device is targeted at the cost-competitive removable storage
market (flash cards and USB drives), which is projected to consume 35 percent
of total NAND gigabytes in calendar 2013.^1 Micron is now sampling the 128Gb
TLC NAND device with select customers; it will be in production in calendar
"This is the industry's smallest, highest-capacity NAND flash memory
device—empowering a new class of consumer storage applications," said Glen
Hawk, vice president of Micron's NAND Solutions Group. "Every day we learn of
new and innovative use cases for flash storage, underpinning the excitement
and opportunity for Micron. We are committed to enriching our portfolio of
leading Flash storage solutions that serve our broad customer base."
Micron is presenting a paper on the 128Gb TLC NAND device at the upcoming
International Solid-State Circuits Conference (ISSCC) on Feb. 19 at 3:15 p.m.
PST, in San Francisco, California.
^1Source: Micron Marketing, projecting gigabytes consumed
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Micron Technology, Inc., is one of the world's leading providers of advanced
semiconductor solutions. The company transforms foundational memory
technologies—including DRAM, NAND Flash and NOR Flash—into innovative
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operations design, manufacture and market these solutions for use in
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