Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN® FETs

  Efficient Power Conversion Development Board Demonstrates Ease of Designing
  Power Systems with 200 V eGaN® FETs

EPC9004 features eGaN FETs in combination with dedicated GaN FET gate driver
from Texas Instruments

Business Wire

EL SEGUNDO, Calif. -- February 5, 2013

Efficient Power Conversion Corporation (EPC) today announced the availability
of the EPC9004 development board, featuring EPC’s enhancement-mode gallium
nitride (eGaN) field effect transistors (FETs). This board demonstrates how
recently introduced IC gate drivers, optimized for GaN FETs, make the task of
transitioning from silicon power transistors to higher performance eGaN FETs
simple and cost effective.

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output
current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in
combination with the UCC27611 high-speed gate driver from Texas Instruments,
thus reducing time and complexity for designing high frequency, high
performance power systems.

The EPC9004 simplifies the evaluation process of high performance eGaN FETs by
including all the critical components, including a dedicated gate driver, on a
single 2” x 1.5” board that can be easily connected into any existing
converter. In addition, there are various probe points on the board to
facilitate simple waveform measurement and efficiency calculation. A Quick
Start Guide is included for reference and ease of use.

The 200 V EPC2012 eGaN FET is ideal for use in applications such as wireless
charging, magnetic resonance imaging (MRI), and low RF frequency applications
such as smart meter communications.

The EPC9004 development board is priced at $95.00. Like all EPC products, it
is available for immediate delivery from Digi-Key at
http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

  *EPC9004 Quick Start Guide:
    http://epc-co.com/epc/documents/guides/EPC9004_qsg.pdf
  *Download EPC2012 and all EPC eGaN datasheets at
    http://epc-co.com/epc/Products.aspx
  *Development boards and other design support available at
    http://epc-co.com/epc/ToolsandDesignSupport/DemoBoards.aspx
  *View eGaN applications support materials at
    http://epc-co.com/epc/DesignSupportbr/Applications/DesignBasics.aspx

About EPC

EPC is the leader in enhancement mode gallium nitride based power management
devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as servers, wireless power transmission, envelope tracking,
RF transmission, power-over-ethernet (PoE), solar micro inverters, energy
efficient lighting, and class-D audio amplifiers with device performance many
times greater than the best silicon power MOSFETs. Visit our web site:
www.epc-co.com.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Contact:

Efficient Power Conversion Corporation
Joe Engle, 310.986.0350
joe.engle@epc-co.com