Samsung Delivers Strong 14nm FinFET Logic Process and Design Infrastructure for Advanced Mobile SoC Customers

  Samsung Delivers Strong 14nm FinFET Logic Process and Design Infrastructure
  for Advanced Mobile SoC Customers

Business Wire

SEOUL, South Korea -- December 20, 2012

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor
solutions, today announced that it reached another milestone in the
development of 14-nanometer (nm) FinFET process technology with the successful
tape-out of multiple development vehicles in collaboration with its key design
and IP partners. In addition, Samsung has signed an agreement with ARM® for
14nm physical IP and libraries. This agreement is the latest in a series from
Samsung and ARM that has delivered production proven SoC enablement. Samsung,
together with its ecosystem partners, is in a position to offer leading edge
customers a robust design infrastructure to drive an ever expanding advanced
mobile SoC market.

“As we move closer to true mobile computing, chip designers are eager to take
advantage of the gains in performance and significantly lower power of 14nm
FinFET to deliver PC like user experience on a mobile device,” said Dr.
Kyu-Myung Choi, senior vice president of System LSI infrastructure design
center, Device Solutions Division, Samsung Electronics. “The design
complexities at 14nm require complete harmony between the process technology,
design methodology, tools and IPs. We are synchronizing all the key elements
so our customers can deliver their newest chips to market quickly and
efficiently.”

As part of its 14nm FinFET development process, Samsung, and its ecosystem
partners – ARM, Cadence, Mentor and Synopsys – taped out multiple test chips
ranging from a full ARM® Cortex™-A7 processor implementation to a SRAM-based
chip capable of operation near threshold voltage levels as well as an array of
analog IP.

The full ARM Cortex-A7 processor test chip tape-out represents a significant
milestone for silicon manufacturing for the fabless ecosystem. The Cortex-A7
implementation on FinFET demonstrates the low-power component of the ARM
big.LITTLE™ processor configuration/technology strategy for mobile computing
platforms. The Samsung 14nm FinFET enablement for SoC design provides improved
leakage and dynamic power advantages to the expanding mobile computing market.
This collaboration builds on the long-standing partnership between Samsung and
ARM including SoC design enablement for the production proven 32/28nm High-K
Metal Gate (HKMG) technology. Enabling SoC design on FinFET allows the
continued fast pace of innovation that is the hallmark of the mobile market
segment.

The Cortex-A7 processor test chip was implemented by Cadence in collaboration
with ARM and Samsung. Cadence delivered a full RTL-to-signoff flow, building
upon a tool set that has been thoroughly tested on 20nm designs requiring
automated double patterning. The tight collaboration with Samsung and ARM
enabled Cadence to hone its technology for 14nm FinFET designs, paving the way
for 14nm market readiness. ARM used Cadence tools to develop the 14nm FinFET
libraries, and Cadence tools were also used for a full-flow RTL-to-signoff
tapeout of the processor core on Samsung’s 14nm FinFET process, as well as
chip-level integration and verification.

Samsung used Synopsys tools optimized for FinFET devices to implement
additional IP on this vehicle, including low power SRAMs intended to operate
with the power supply close to threshold voltage levels. The move from
two-dimensional transistors to three-dimensional transistors introduces
several new IP and EDA tool challenges including modeling. The multi-year
collaboration between Samsung and Synopsys has delivered foundational modeling
technologies for 3D parasitic extraction, circuit simulation and physical
design-rule support of FinFET devices.

Samsung is also extending their work with Mentor to enable a complete solution
at 14nm FinFET that addresses customer challenges in design, validation,
manufacturing co-optimization, and post-design production ramps.The
collaborative efforts leverage the unique capabilities of Samsung’s processes,
while helping designers deal with the complexities of multi-patterning
lithography, FinFET transistors, and more complex reliability requirements.

Silicon-based PDK Availability

With its process design kit available to customers today, customers can start
designing with models, design rule manuals and technology files that have been
developed based on silicon results from previous 14nm FinFET test chips run in
Samsung’s R&D facilities. This PDK includes design flows, routers and other
design enablement features to support new device structures, local
interconnects, and advanced routing rules. The investments that Samsung is
making into the entire ecosystem at 14nm will give customers early access to
all elements of the design infrastructure to accelerate their chip
development.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in semiconductor,
telecommunication, digital media and digital convergence technologies with
2011 consolidated sales of US$143.1 billion. Employing approximately 227,000
people in 203 offices across 75 countries, the company operates two separate
organizations to coordinate its nine independent business units: Digital Media
& Communications, comprising Visual Display, Mobile Communications,
Telecommunication Systems, Digital Appliances, IT Solutions, and Digital
Imaging; and Device Solutions, consisting of Memory, System LSI and LED. For
more information, please visit www.samsung.com.

Samsung and the stylized Samsung design are trademarks and service marks of
Samsung Electronics Co., Ltd. Other trademarks are the property of their
respective owners.

                                Partner Quotes

ARM

"Implementing the Cortex-A7 processor-based test chip on the 14nm FinFET
process combines the most energy-efficient ARM applications processor with
Samsung’s advanced low-power manufacturing process to demonstrate our ongoing
commitment to low-power leadership. Our early collaboration with Samsung
during its process technology development helps optimize ARM Artisan® physical
IP and maximize the benefits available from advanced silicon manufacturing."
Dr. Dipesh Patel
Vice President and General Manager, Physical IP Division
ARM

Cadence

“Our leading-edge customers see the performance and low-power advantages of
14nm FinFET design, and they’ve asked us to help them get there ASAP. The
Cadence end-to-end design flow including signoff enables engineers working
along the cutting edge to bring the benefits of 14nm FinFET design to the
mobile and server markets.”
Dr. Chi-Ping Hsu
Senior Vice President, Research and Development, Silicon Realization Group
Cadence

Mentor Graphics

“Mentor and Samsung continue to be committed to providing the most advanced
solutions for our mutual customers in both semiconductor process technology,
and the associated ecosystem required to leverage new offerings like FinFET
transistors. Mentor has always driven its technology development in
partnership with key customers. Our collaboration with Samsung is yielding
results that designers can access immediately.”
Joseph Sawicki
Vice President and General Manager, Design to Silicon Division
Mentor Graphics

Synopsys

"Our successful 14nm FinFET tapeouts with Samsungrepresent a major milestone
in the multi-year collaboration between Samsung and Synopsys to deliver
optimized FinFET-ready EDA tool and IP enablement for the node."
John Chilton
Sr Vice President, Marketing & Strategic Development
Synopsys

Contact:

Samsung Semiconductor Inc
Lisa Warren-Plungy, 408-544-5377
lwarrenplungy@ssi.samsung.com
 
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