STMicroelectronics Announces Its 28nm FD-SOI Technology Is

STMicroelectronics Announces Its 28nm FD-SOI Technology Is Ready for
Manufacturing in Its Leading-Edge Crolles Fab 
Silicon-Verified Process Technology Delivers 30% Higher Speed and up
to 50% Improvement in Power 
GENEVA -- (Marketwire) -- 12/11/12 --   STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers across the
spectrum of electronics applications, announced today another step
towards the availability of its 28nm FD-SOI Technology Platform, now
open for pre-production from its Crolles (France) 300mm manufacturing
facility. The announcement confirms ST's ability to provide its
planar fully-depleted technology from the 28nm technology node,
essential in quenching the market's appetite for embedded processors
in multimedia and portable applications that can meet the industry's
highest performance and lowest power demands vital to deliver all the
stunning graphics, multimedia and high-speed broadband connectivity
without sacrificing battery life. 
The announcement coincides with a workshop on
fully-depleted-silicon-on-insulator (FD-SOI) technologies held by the
FD-SOI Consortium in San Francisco. 
The FD-SOI Technology Platform encompasses the availability of a
feature-complete and silicon-verified Design Platform, including the
full set of foundation libraries (std-cells, memory generators,
I/Os), AMS IPs and high speed interfaces), and a design flow ideally
suited for developing high-speed and energy-efficient devices. 
ST's FD-SOI technology has already been selected by ST-Ericsson for
use in its future mobile platforms, which will enable enhanced
performance with significantly lower power consumption than
conventional technologies. 
"ST has a long history in pioneering new solutions in both product
and technology. By bringing FD-SOI technology to manufacturing
readiness, ST is again positioning itself as an innovator and leader
in semiconductor technology development and manufacturing," said
Jean-Marc Chery, Executive Vice President, General Manager Digital
Sector, and Chief Technology and Manufacturing Officer of
STMicroelectronics. "Post-processing wafer testing has allowed us to
prove the significant performance and power advantages of FD-SOI over
conventional technologies, building a cost-effective industrial
solution that is
 available from the 28nm node. Measurements on a
multi-core subsystem in an ST-Ericsson NovaThor ModAp platform, with
a maximum frequency exceeding 2.5Ghz and delivering 800 MHz at 0.6V,
are confirming expectations and demonstrating the great flexibility
of the technology and the extended voltage range exploitable through
DVFS (Dynamic Voltage and Frequency Scaling)," concluded Chery. 
As important as its success in manufacturing, ST has found porting
Libraries and Physical IPs from 28nm Bulk CMOS to 28nm FD-SOI to be
straightforward, and the process of designing digital SoCs with
conventional CAD tools and methods in FD-SOI to be identical to Bulk,
due to the absence of MOS-history-effect. FD-SOI enables production
of highly energy-efficient devices, with the dynamic body-bias
allowing instant switch to high-performance mode when needed and
return to a very-low-leakage state for the rest of the time -- all in
a totally transparent fashion for the Application Software, Operating
System, and the Cache Systems. Finally, FD-SOI can operate at
significant performance at low voltage with superior energy
efficiency versus Bulk CMOS.  
About STMicroelectronics  
ST is a global leader in the semiconductor market serving customers
across the spectrum of sense and power and automotive products and
embedded processing solutions. From energy management and savings to
trust and data security, from healthcare and wellness to smart
consumer devices, in the home, car and office, at work and at play,
ST is found everywhere microelectronics make a positive and
innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.  
In 2011, the Company's net revenues were $9.73 billion. Further
information on ST can be found at www.st.com.  
ST FD SOI Ready for Manufacturing:
http://hugin.info/152740/R/1663805/539641.pdf  
For Press Information Contact: 
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz@st.com 
 
 
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