STMicroelectronics : Researchers From STMicroelectronics and

STMicroelectronics : Researchers From STMicroelectronics and CEA-Leti
Receive 2012 General Ferrie Grand Prize Award 
Highest Honor for Electronics R&D in France Recognizes Work on
Next-Generation Semiconductor Process Technology 
CROLLES, FRANCE -- (Marketwire) -- 12/05/12 --  STMicroelectronics
(NYSE: STM), a global semiconductor leader serving customers across
the spectrum of electronics applications, and CEA-Leti, France's
premier research and technology institute, announced that a team of
ST and CEA-Leti researchers had received the 2012 General Ferrie
Considered to be the highest award in electronics R&D in France, the
General Ferrie annual award honors an engineer or a scientific team
whose work has made a significant contribution to the progress of
electronics and its applications.  
The team members presented were Claire Fenouillet-Beranger and
Olivier Faynot from Leti, and Stephane Monfray and Frederic Boeuf
from ST. They were honored for their work on FD-SOI (Fully Depleted
Silicon-On-Insulator) technology, which is a major technological
breakthrough in the pursuit of miniaturization of electronic
Since the beginning of the 1960s, the chip industry's efforts to meet
the growing demand for computing power have followed Moore's Law,
which recognized that the number of transistors on integrated
circuits doubles approximately every two years.  
However, the industry today faces a major constraint: the growing
difficulty to control the electrical behavior of transistors once
their size shrinks below 100nm. Work begun around the turn of the
century by the advanced-modules teams at ST and Leti has made it
possible to quantify the improvement that new methods bring to
conventional transistor performance.  
Over time, the idea of making transistors on a substrate of
ultra-thin silicon resting on an insulator was developed as an
alternative to making transistors on thicker silicon without the
insulator. The result was Fully Depleted Silicon-On-Insulator
(FD-SOI). This planar technology uses manufacturing processes that
are already in place for conventional technologies. Other approaches,
including one calledFinFET, require disruptive changes to design
techniques and process technologies because it relies on 3-D
In fact, the four researchers were able to validate the technological
choice for FD-SOI, while also enabling its industrialization. They
identified three key advantages to this approach: 

--  The production process is very close to that used in existing standard
    technologies ("Bulk" for silicon monocrystalline substrates)
--  The transfer of circuit designs from bulk to FD-SOI technology is
    significantly easier than with FinFET, because the approach continues
    to use a planar geometry
--  This technology is very attractive for mobile applications such as
    smartphones and tablets, which simultaneously require high performance
    and low power consumption

"This award acknowledges more than 20 years of Leti's R&D work on SOI,"
said Laurent Malier, CEO of Leti. "Leti is very proud to have
succeeded in developing this technology through to the industrial
level and to have made it an excellent candidate for components that
are being integrated into mobile devices for the ideal compromise
they allow between speed and power consumption." 
Thomas Skotnicki, director advanced devices, ST and IEEE Fellow,
said, "The perseverance and quality in the work of Claire, Frederic,
Olivier and Stephane at the heart of the advanced-component teams,
demonstrated different transistor concepts for thin-film and overcame
all obstacles to industrialization." 
ST Executive Vice President Joel Hartmann, head of front-end
manufacturing and process R&D, Digital Sector, added: "In an industry
of fierce global competition striving to continually miniaturize
components, I am particularly proud to see this long cooperation
between CEA and ST rewarded."  
The Dec. 3 awards ceremony was presided over by Paul Friedel,
president of SEE (Societe de l'Electricite, de l'Electronique et des
Technologies de l'Information et la Communication) and Erich Spitz of
the Academy of Sciences and the Academy of Technologies, and
president of the Committee for Awards and Distinctions.  
The award honors the memory of Gustave-Auguste Ferrie (1868-1932),
who was an engineer, French general, and pioneer in radio diffusion.
He was responsible for the installation of the radio-emitting station
on the Eiffel Tower in 1904. In 1917, his devices enabled the
interception of messages from spy Mata Hari and helped end her
espionage activities. 
About STMicroelectronics
 ST is a global leader in the semiconductor
market serving customers across the spectrum of sense and power
technologies and multimedia convergence applications. From energy
management and savings to trust and data security, from healthcare
and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting
more from technology to get more from life, ST stands for
In 2011, the Company's net revenues were $9.73 billion. Further
information on ST can be found at 
About CEA-Leti
 Leti is an institute of CEA, a French
research-and-technology organization with activities in energy, IT,
healthcare, defence and security. Leti is focused on creating value
and innovation through technology transfer to its industrial
partners. It specializes in nanotechnologies and their applications,
from wireless devices and systems, to biology, healthcare and
photonics. NEMS and MEMS are at the core of its activities. An anchor
of the MINATEC campus, CEA-Leti operates 8,000-m^2 of
state-of-the-art clean room space on 200mm and 300mm wafer platforms.
It employs 1,700 scientists and engineers including 240 Ph.D.
students and 200 assignees from partner companies. CEA-Leti owns more
than 1,880 patent families. 
 For more information, visit 
Ferrie Award:  
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