RFMD Releases Family of Linear GaN Power Transistors

RFMD Releases Family of Linear GaN Power Transistors

MUNICH, Germany, Nov. 13, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor
technologies, today announced that RFMD has production released two highly
linear gallium nitride (GaN) RF unmatched power transistors (UPTs)—RFHA3942
(35W) and RFHA3944 (65W)—that deliver superior linear performance versus
competing GaN transistors.

The release of the RFHA3942 and RFHA3944 follows the previous release of the
RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power
applications. This new series of linear GaN discrete amplifiers is optimized
for broadband applications requiring linear back-off operation or reduced
spurious performance. RFMD plans to further its technology leadership position
with future releases of 10W and 95W linear GaN devices over the next 12
months, significantly expanding the GaN UPT options available to RFMD's

RFMD's highly linear GaN UPTs target new and existing communication
architectures requiring improved broadband linear performance in support of
high peak-to-average modulation waveforms. The RFHA3942 and RFHA3944 are
tunable over a broad frequency range (DC to 4GHz) and provide CW peak power of
35W and 65W respectively. They also offer high gain of 15dB and high peak
efficiency of >55%. Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the
RFHA3942 achieves-43dBc adjacent channel power (ACP) at 34dBm POUT and the
RFHA3944 achieves -54dBc ACP at 37dBm POUT. Additionally, the RFHA3942 and
RFHA3944 offer high terminal impedance at the input and output of the package,
enabling wideband gain and power performance advantages in a single amplifier.
The RFHA3942 and RFHA3944 are packaged in a flanged ceramic two-leaded package
that leverages RFMD's advanced heat-sink and power-dissipation technologies to
deliver excellent thermal stability and conductivity.

Jeff Shealy, vice president and general manager of RFMD's Power Broadband
business unit, said, "RFMD is very pleased to expand its GaN-based product
portfolio, offering industry-leading linear power performance in support of
diverse end markets. RFMD's GaN product portfolio clearly demonstrates our
continued commitment to technology and product leadership, and we look forward
to introducing additional GaN devices that feature superior power density,
high efficiency, rugged dependability, and 'green' power consumption

RFMD is showcasing a broad portfolio of industry-leading RF components at the
Electronica 2012 trade show in Munich, Germany, November 13-16, Stand #A4.134.
Samples and production quantities are available now through RFMD's online
store or through local RFMD sales channels.Datasheets can be obtained via
RFMD's website at www.rfmd.com or by contacting RFMD at 336-664-1233.

About RFMD

RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the mobile device,
wireless infrastructure, wireless local area network (WLAN or WiFi), cable
television (CATV)/broadband, Smart Energy/advanced metering infrastructure
(AMI), and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and
ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales
and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at

The RF Micro Devices, Inc. logo is available at

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         Doug DeLieto
         VP, Investor Relations

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