Market Snapshot
  • U.S.
  • Europe
  • Asia
Ticker Volume Price Price Delta
DJIA 16,408.54 -16.31 -0.10%
S&P 500 1,864.85 2.54 0.14%
NASDAQ 4,095.52 9.29 0.23%
Ticker Volume Price Price Delta
STOXX 50 3,155.81 16.55 0.53%
FTSE 100 6,625.25 41.08 0.62%
DAX 9,409.71 91.89 0.99%
Ticker Volume Price Price Delta
NIKKEI 14,480.73 63.20 0.44%
TOPIX 1,169.46 2.87 0.25%
HANG SENG 22,760.24 64.23 0.28%

RFMD Releases Family of Linear GaN Power Transistors



RFMD Releases Family of Linear GaN Power Transistors

MUNICH, Germany, Nov. 13, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor
technologies, today announced that RFMD has production released two highly
linear gallium nitride (GaN) RF unmatched power transistors (UPTs)—RFHA3942
(35W) and RFHA3944 (65W)—that deliver superior linear performance versus
competing GaN transistors.

The release of the RFHA3942 and RFHA3944 follows the previous release of the
RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power
applications. This new series of linear GaN discrete amplifiers is optimized
for broadband applications requiring linear back-off operation or reduced
spurious performance. RFMD plans to further its technology leadership position
with future releases of 10W and 95W linear GaN devices over the next 12
months, significantly expanding the GaN UPT options available to RFMD's
customers.

RFMD's highly linear GaN UPTs target new and existing communication
architectures requiring improved broadband linear performance in support of
high peak-to-average modulation waveforms. The RFHA3942 and RFHA3944 are
tunable over a broad frequency range (DC to 4GHz) and provide CW peak power of
35W and 65W respectively. They also offer high gain of 15dB and high peak
efficiency of >55%. Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the
RFHA3942 achieves -43dBc adjacent channel power (ACP) at 34dBm POUT and the
RFHA3944 achieves -54dBc ACP at 37dBm POUT. Additionally, the RFHA3942 and
RFHA3944 offer high terminal impedance at the input and output of the package,
enabling wideband gain and power performance advantages in a single amplifier.
The RFHA3942 and RFHA3944 are packaged in a flanged ceramic two-leaded package
that leverages RFMD's advanced heat-sink and power-dissipation technologies to
deliver excellent thermal stability and conductivity. 

Jeff Shealy, vice president and general manager of RFMD's Power Broadband
business unit, said, "RFMD is very pleased to expand its GaN-based product
portfolio, offering industry-leading linear power performance in support of
diverse end markets. RFMD's GaN product portfolio clearly demonstrates our
continued commitment to technology and product leadership, and we look forward
to introducing additional GaN devices that feature superior power density,
high efficiency, rugged dependability, and 'green' power consumption
advantages."

RFMD is showcasing a broad portfolio of industry-leading RF components at the
Electronica 2012 trade show in Munich, Germany, November 13-16, Stand #A4.134.
Samples and production quantities are available now through RFMD's online
store or through local RFMD sales channels. Datasheets can be obtained via
RFMD's website at www.rfmd.com or by contacting RFMD at 336-664-1233.

About RFMD

RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the mobile device,
wireless infrastructure, wireless local area network (WLAN or WiFi), cable
television (CATV)/broadband, Smart Energy/advanced metering infrastructure
(AMI), and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and
ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales
and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
www.rfmd.com.

The RF Micro Devices, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6436

This press release includes "forward-looking statements" within the meaning of
the safe harbor provisions of the Private Securities Litigation Reform Act of
1995. These forward-looking statements include, but are not limited to,
statements about our plans, objectives, representations and contentions and
are not historical facts and typically are identified by use of terms such as
"may," "will," "should," "could," "expect," "plan," "anticipate," "believe,"
"estimate," "predict," "potential," "continue" and similar words, although
some forward-looking statements are expressed differently. You should be aware
that the forward-looking statements included herein represent management's
current judgment and expectations, but our actual results, events and
performance could differ materially from those expressed or implied by
forward-looking statements. We do not intend to update any of these
forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the
federal securities laws. RF Micro Devices' business is subject to numerous
risks and uncertainties, including variability in operating results, risks
associated with the impact of global macroeconomic and credit conditions on
our business and the business of our suppliers and customers, our reliance on
a few large customers for a substantial portion of our revenue, the rate of
growth and development of wireless markets, our ability to bring new products
to market, our reliance on inclusion in third party reference designs for a
portion of our revenue, our ability to manage channel partner and customer
relationships, risks associated with the operation of our wafer fabrication,
molecular beam epitaxy, assembly and test and tape and reel facilities, our
ability to complete acquisitions and integrate acquired companies, including
the risk that we may not realize expected synergies from our business
combinations, our ability to attract and retain skilled personnel and develop
leaders, variability in production yields, raw material costs and
availability, our ability to reduce costs and improve margins in response to
declining average selling prices, our ability to adjust production capacity in
a timely fashion in response to changes in demand for our products, dependence
on gallium arsenide (GaAs) for the majority of our products, dependence on
third parties, and substantial reliance on international sales and operations.
These and other risks and uncertainties, which are described in more detail in
RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause
actual results and developments to be materially different from those
expressed or implied by any of these forward-looking statements.

 RF MICRO DEVICES^®, RFMD^® and PowerSmart^® are trademarks of RFMD, LLC. All
 other trade names, trademarks and registered trademarks are the property of
                           their respective owners.

CONTACT: At RFMD
         Doug DeLieto
         VP, Investor Relations
         336-678-7088

RF Micro Devices Logo
Sponsored Links
Advertisement
Advertisements
Sponsored Links
Advertisement