Fairchild Semiconductor’s Silicon Carbide (SiC) Solutions Offer Industry-Leading Efficiency and Improved Reliability in Power

  Fairchild Semiconductor’s Silicon Carbide (SiC) Solutions Offer
  Industry-Leading Efficiency and Improved Reliability in Power Conversion

SiC Bipolar Junction Transistors (BJTs), First in the Product Portfolio, Offer
           Lowest Total Power Losses at High Operation Temperatures

Business Wire

SAN JOSE, Calif. -- November 13, 2012

In an effort to achieve higher power density, and to meet strict efficiency
regulations and system up-time requirements, industrial and power electronic
designers are challenged with constantly reducing power losses and improving
reliability in their designs. However, improving these critical design
capabilities in applications like renewable energy, industrial motor drives,
high-density power supplies, automotive, and down-hole can complicate a design
as well as drive overall system costs higher.

To help designers meet these challenges, Fairchild Semiconductor (NYSE: FCS),
a leading global supplier of high-performance power and mobile semiconductor
solutions, extends its leadership position in innovative high-performance
power transistor technology with the announcement of silicon carbide (SiC)
technology solutions ideally suited for power conversion systems.

Fairchild’s SiC Solutions for Success

By introducing SiC-based offerings into its product mix, Fairchild reinforces
its product leadership in innovative, high-performance power transistor

Fairchild’s SiC capabilities include:

  *Optimized, semi-standard, and customized technical solutions that take
    advantage of its large portfolio of semiconductor devices and module
    packaging technologies
  *Advanced technologies that simplify engineering challenges with functional
    integration and design support resources that minimize components while
    reducing engineering time
  *Meeting the needs of device manufacturers and chipset suppliers by
    integrating leading device technologies into smaller advanced packages
    that offer size, cost and power advantages

Among the first products to be released in Fairchild’s SiC portfolio is a
family of advanced SiC bipolar junction transistors (BJTs) that offer high
efficiency, high-current density, robustness, and easy high-temperature
operation. By leveraging exceptionally efficient transistors, Fairchild’s SiC
BJTs enable higher switching frequencies due to lower conduction and switching
losses (ranging from 30-50 percent) that provide up to 40 percent higher
output power in the same system form factor.

Enabling the use of smaller inductors, capacitors and heat sinks, these robust
BJTs can lower overall system costs up to 20 percent. With performance levels
that drive much higher efficiency and superior short-circuit and reverse bias
safe operating area, these industry-leading SiC BJTs will play a significant
role in optimizing the power management of high-power conversion applications.

Fairchild, as part of a complete silicon carbide solution, also has developed
“plug-n-play” discrete driver boards (a 15A and 50A version) that, when used
in conjunction with Fairchild’s advanced SiC BJTs, not only provide increased
switching speeds for reduced switching losses and better reliability, but also
allow designers to easily implement SiC technology into their applications.
Application notes, which provide designers the additional support necessary to
design with SiC devices, and reference designs that allow for the development
of driver boards to meet specific application needs, are also available from
Fairchild and are intended to reduce design time and shorten time-to-market.

SiC BJT vs. Other SiC

Most Efficient 1200 V Power Conversion Switch Ever Made

  *Lowest total losses, including switching, conduction and driver losses
  *Lowest switching loss at any given R[ON], of all 1200V devices

Straight-Forward Driving

  *Normally-off feature reduces risks, complexity and performance limiting
  *Stable base input that is not sensitive to over/under voltage peaks

Robust and Reliable

  *High-rated operating temperature: Tj=175°C
  *Easy paralleling due to positive temperature coefficient for R[ON] and
    negative temperature coefficient
    for gain
  *Stable, rugged Vbe forward voltage and reverse blocking capability

Packaging and Pricing Information (in US 1,000 quantity pieces)

Fairchild’s SiC BJTs are available in a TO-247 package and engineering samples
are available now for qualified customers.

Fairchild’s expertise in power semiconductor devices is ideally matched with
the growing silicon carbide marketplace. The company’s SiC product portfolio
will offer speed, flexibility and overall performance advantages not currently
available from competitors. Committed to solutions for success, Fairchild
continuously works with customers to deliver superior multi-market
semiconductor products, emphasizing innovation, service and manufacturing

For more information on Fairchild’s SiC technology, please visit:

Fairchild Semiconductor: Solutions for Your Success™

Contact Information:

To contact Fairchild Semiconductor about this product, please go to:

For information on other products, design tools and sales contacts, please
visit: http://www.fairchildsemi.com.

About Fairchild Semiconductor:

Fairchild Semiconductor (NYSE: FCS) – global presence, local support, smart
ideas. Fairchild delivers energy-efficient, easy-to-use and value-added
semiconductor solutions for power and mobile designs. We help our customers
differentiate their products and solve difficult technical challenges with our
expertise in power and signal path products. Please contact us on the web at

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Fairchild Semiconductor:
Paul R. Hughes, 1(800)341-0392 X 3110
Public Relations Manager
Malorie Pastor, 1(800)341-0392 X 3362
Public Relations Coordinator
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