Moving Forward on Energy Efficiency: Fujitsu Semiconductor Aims

Moving Forward on Energy Efficiency: Fujitsu Semiconductor Aims to Start
Production of GaN Power Devices 
Achieves high output power of 2.5kW in power supply units for servers 
Yokohama, Japan, Nov 8, 2012 - (JCN Newswire) - Fujitsu Semiconductor Limited
today announced that it successfully achieved high output power of 2.5kW in
server power supply units equipped with gallium-nitride (GaN) power devices
built on a silicon substrate. Fujitsu Semiconductor aims to start volume
production of the GaN power devices in the second half of 2013. These devices
will enable Fujitsu Semiconductor to propose their use in a wide variety of
value-enhancing power supply applications, significantly contributing to the
realization of a low-carbon society. Fujitsu Semiconductor is aiming to achieve
approximately 10 billion yen in sales of GaN power devices in fiscal 2015. 
Compared to conventional silicon-based power devices, GaN-based power devices
feature characteristics such as lower on-resistance and the ability to perform
high-frequency operations. These characteristics are expected to contribute to
improvements in the conversion efficiency of power supply units and make them
more compact. Fujitsu Semiconductor is aiming to commercialize GaN power
devices on a silicon substrate, which, with increases in the diameters of
silicon wafers, enables low-cost production. Towards that aim, Fujitsu
Semiconductor has been developing technology for volume production since 2009.
In addition, Fujitsu Semiconductor has provided specific power supply-related
partners with sample GaN power devices since 2011 and has worked on optimizing
them for use in power supply units. 
Recently, in a collaborative effort together with Fujitsu Laboratories
Limited, Fujitsu Semiconductor has been engaging in technical development
initiatives, such as developing a process technology for growing high quality
GaN crystals on a silicon substrate, developing device technologies, such as
optimizing the design of electrodes to control the rise of on-resistance during
switching, and devising a circuit layout for power supply units that can
support the high-speed switching of GaN-based devices. These results have
enabled Fujitsu Semiconductor, in a test circuit using a GaN power device, to
succeed in achieving conversion efficiency that exceeds the performance of
conventional silicon devices. Fujitsu Semiconductor also prototyped a power
supply unit for servers equipped with a GaN power device for the power factor
correction circuit and successfully achieved output power of 2.5kW. 
Fujitsu Semiconductor views its success in these results as opening a path to
high-voltage, large-current applications for its GaN power devices. 
Fujitsu Semiconductor has recently completed setting up a mass-production line
for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale
production of GaN power devices in second half of 2013. Moving forward, by
offering GaN power devices optimized for customer applications and technology
support for circuit designs, Fujitsu Semiconductor will support the development
of low-loss, highly-compact power supply units suited to a wide range of uses.
Fujitsu Semiconductor is aiming to achieve approximately 10 billion yen in
sales of GaN power devices in fiscal 2015. 
Fujitsu Semiconductor will exhibit its GaN power device at Embedded Technology
2012, which will be held at the Pacifico Yokohama convention center November
14-16, 2012. 
For more information, please visit http://jp.fujitsu.com/group/fsl/en/. 
About Fujitsu Semiconductor 
Fujitsu Semiconductor Limited designs, manufactures, and sells semiconductors,
providing highly reliable, optimal solutions and support to meet the varying
needs of its customers. Products and services include microcontrollers, ASICs,
ASSPs, and power management ICs, with wide-ranging expertise focusing on
mobile, ecological, automotive, imaging, security, and high-performance
applications. Fujitsu Semiconductor also drives power efficiency and
environmental initiatives. Headquartered in Yokohama, Fujitsu Semiconductor
Limited (formerly named Fujitsu Microelectronics Limited) was established as a
subsidiary of Fujitsu Limited on March 21, 2008. Through its global sales and
development network, with sites in Japan and throughout Asia, Europe, and the
Americas, Fujitsu Semiconductor offers semiconductor solutions to the global
marketplace. For more information, please see: : http://jp.fujitsu.com/fsl/en/ 
About Fujitsu Limited 
Fujitsu is the leading Japanese information and communication technology (ICT)
company offering a full range of technology products, solutions and services.
Over 170,000 Fujitsu people support customers in more than 100 countries. We
use our experience and the power of ICT to shape the future of society with our
customers. Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.5
trillion yen (US$54 billion) for the fiscal year ended March 31, 2012. For more
information, please see www.fujitsu.com. 
Contact: 
Fujitsu Semiconductor Limited
Public Relations Department
https://www-s.fujitsu.com/jp/group/fsl/en/release/inquiry.html 
Customer Contacts 
Fujitsu Semiconductor Limited
Business Development Department
Tel: +81-45-755-7087
https://www-s.fujitsu.com/global/services/microelectronics/contact/form.html 
Copyright 2012 JCN Newswire. All rights reserved. www.japancorp.net 
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