Northrop Grumman Begins Sampling New Gallium Nitride MMIC Product Line for Military, Challenging Commercial High-Power Amplifier

Northrop Grumman Begins Sampling New Gallium Nitride MMIC Product Line for
Military, Challenging Commercial High-Power Amplifier Needs

REDONDO BEACH, Calif., Nov. 1, 2012 (GLOBE NEWSWIRE) -- Northrop Grumman
Corporation (NYSE:NOC) has developed a line of gallium nitride (GaN)
Monolithic Microwave Integrated Circuits (MMICs) for military and commercial
uses. These devices represent the first commercial availability of GaN-based
components from the company.

Initial engineering evaluation sampling is underway with quantities of three
GaN MMIC products. They were developed for defense and commercial ground
satellite communication terminal markets and the commercial wireless
infrastructure market, said Frank Kropschot, general manager of the
Microelectronics Products and Services (MPS) business unit of Northrop Grumman
Aerospace Systems.

"We have been producing gallium nitride-based devices since 2002 at Northrop
Grumman's dedicated wafer fabrication facility in Redondo Beach, which the
Department of Defense has designated as a Trusted Foundry," Kropschot said.
"We have achieved outstanding performance and reliability from our
high-frequency gallium nitride process and are extremely confident that these
GaN MMICs will improve performance, efficiency and bandwidth for military and
commercial users."

The initial set of three MMICs has these performance characteristics:

  *The APN149 is a GaN high electron mobility transistor (HEMT) MMIC power
    amplifier chip that operates between 18 and 23 gigahertz (GHz). This power
    amplifier provides 20 decibels (dB) of linear gain, +36 dBm (4 watts) of
    output power at 1 dB gain compression and +38 dBm (6.3 W) in saturation
    with Physical Address Extension (PAE) of greater than 30 percent.
  *The APN180 is a GaN HEMT MMIC power amplifier chip that operates between
    27 and 31 GHz. This power amplifier provides 21 dB of linear gain, +38 dBm
    (6.3 W) of output power at 1 dB gain compression and +39 dBm (8 W) in
    saturation with PAE of 30 percent at midband. For less demanding
    applications, the APN180 can be operated from a drain voltage as low as
    +20V while still producing +37 dBm (5 W) of saturated output power.
  *The APN167 is a GaN HEMT MMIC power amplifier chip that operates between
    43 and 46 GHz. This power amplifier provides 20 dB of gain, +35.5 dBm (3.5
    W) of output power at 1 dB gain compression and +38.5 dBm (7 W) in
    saturation with PAE of 19 percent at midband.

"These new products are the first of several we plan to introduce into the
marketplace during the next few months as we roll out a new family of products
using Northrop Grumman's 0.2µm GaN HEMT process developed partially under the
Defense Advanced Research Projects Agency's (DARPA's) Wide Band Gap
Semiconductors for Radio Frequency program (WBGS-RF)," Kropschot said. He
added the DARPA program was the first of several key GaN technology
development contracts awarded to Northrop Grumman beginning in 2002.

He noted that GaN devices are key components the new low-cost terminals
recently introduced by an industry team consisting of Northrop Grumman,
Lockheed Martin Space Systems and TeleCommunication Systems.

More information and advance data sheets on the gallium nitride product line
are available online at www.as.northropgrumman.com\mps. Limited engineering
prototype samples are available from stock to qualified customers by
contacting MPS at as-mps.sales@ngc.com.

Northrop Grumman is a leader in the design and fabrication of high-speed
components for established and emerging commercial markets, including cellular
and broadband wireless systems as well as aerospace, defense and scientific
applications. The company also offers foundry services that utilize advanced
gallium nitride, gallium arsenide and indium phosphide semiconductor
manufacturing processes.

Northrop Grumman is a leading global security company providing innovative
systems, products and solutions in unmanned systems, cybersecurity, C4ISR, and
logistics and modernization to government and commercial customers worldwide.
Please visit www.northropgrumman.com for more information.

CONTACT: Bob Bishop
         310-812-5227 (office)
         310-251-0261 (mobile)
         bob.j.bishop@ngc.com

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