NXP Boosts Small Cell Wireless Base Stations With

NXP Boosts Small Cell Wireless Base Stations With High-Performance RF 
LDMOS Power Transistors Optimized for Picocell and Microcell Systems
Include World's First Asymmetric MMICs 
NIJMEGEN, THE NETHERLANDS and TOULOUSE, FRANCE -- (Marketwire) --
10/29/12 --  NXP Semiconductors N.V. (NASDAQ: NXPI) today introduced
a new portfolio of LDMOS power transistors designed for small cell
wireless base stations. With dedicated solutions for both picocell
and microcell architectures -- which average 1 to 2 W, and 8 to 12 W,
respectively -- the RF power transistors span frequency ranges from
700 MHz to 2.7 GHz and include the world's first asymmetric MMICs, as
well as low-cost, low-power plastic devices. Delivering an optimal
balance of energy efficiency and integration, NXP's extensive
high-performance RF portfolio provides unprecedented flexibility in
designing highly scalable, cost-optimized systems. NXP is now
showcasing its new small cell portfolio at European Microwave Week in
Amsterdam (booth 515), and an explanation of NXP's modular approach
to MMICs is available here: http://youtu.be/LbJzeMZDhkI  
"Small cells are emerging as a cost-effective approach to increase
wireless network capacity and quality of service, when used as a
complement to macro base stations. By offering a broad portfolio of
energy-efficient LDMOS power transistors dedicated to picocells,
microcells and active antenna systems, we're providing the
flexibility needed to build highly versatile, scalable small-cell
solutions," said Christophe Cugge, director of marketing, base
station power amplifiers, NXP Semiconductors. 
NXP solutions for microcells include: 


 
--  Asymmetric and symmetric MMICs for dual-stage microcells. NXP has
    introduced a new range of monolithic microwave integrated circuits,
    including the industry's first asymmetric MMICs, which provide more
    power efficiency at back-off and offer increased flexibility,
    particularly in Doherty configurations in microcells and antenna
    arrays. The first MMIC based on NXP's Gen7 LDMOS technology, the
    BLM7G22S-60PB(G), is fully released, with qualification samples of 7
    new product types now available. All 7 MMICs are dual path with two
    separate amplifiers, each with 30-dB gain and a certain power rating
    of P1 d
B. Ideal for dual-stage micro base stations where high
    integration is a priority, NXP's family of symmetric and asymmetric
    MMICs offer a modular approach, allowing different power levels on
    each path, as well as better isolation between the two paths for
    better Doherty performance and stability.
--  LDMOS power transistors for single-stage, high-performance microcells.
    For the most performance-sensitive microcells, NXP has introduced a
    range of single-stage dual-path devices in different bands, including
    the BLF6G22LS-40P and the BLF6G27LS-40P, which are currently in volume
    production. Additional products, including the BLP7G10S-45P, the
    BLP7G22S-60P and the BLF8G27LS-50A are currently in development.

  
Solutions for picocells include: 


 
--  Low-power LDMOS transistors. NXP now offers the plastic 10-W
    BLP7G22-10, providing 17 dB gain at 2.0 GHz, and the 7.5-W BLP7G27-07,
    providing 15.3 dB gain at 2.6 GHz, for final-stage picocell
    applications in a variety of configurations from Class A to Doherty.
    NXP's low-power plastic LDMOS transistors offer high performance at 12
    volts, with a peak power of 4 watts -- for example, in a
    high-efficiency 1 watt picocell using two devices in a Doherty
    configuration. Further, as pre-drivers or drivers in both micro and
    macro base stations, they can serve as low-cost alternatives to the
    cer
amic BLF6G21-10G and BLF6G27-10G, which are in mass production. NXP
    is also developing two MMICs for this power class.

  
Links 


 
--  VIDEO: Introducing NXP MMICs: A modular approach:
    http://youtu.be/LbJzeMZDhkI
--  NXP RF power transistors for base stations:
    http://www.nxp.com/products/rf/amplifiers/power_transistors/base_stations/

  
About NXP Semiconductors
 NXP Semiconductors N.V. (NASDAQ: NXPI)
provides High Performance Mixed Signal and Standard Product solutions
that leverage its leading RF, Analog, Power Management, Interface,
Security and Digital Processing expertise. These innovations are used
in a wide range of automotive, identification, wireless
infrastructure, lighting, industrial, mobile, consumer and computing
applications. A global semiconductor company with operations in more
than 25 countries, NXP posted revenue of $4.2 billion in 2011.
Additional information can be found by visiting www.nxp.com. 
Forward-looking Statements
 This document includes forward-looking
statements which include statements regarding NXP's business
strategy, financial condition, results of operations, and market
data, as well as any other statements which are not historical facts.
By their nature, forward-looking statements are subject to numerous
factors, risks and uncertainties that could cause actual outcomes and
results to be materially different from those projected. These
factors, risks and uncertainties include the following: market demand
and semiconductor industry conditions; the ability to successfully
introduce new technologies and products; the end-market demand for
the goods into which NXP's products are incorporated; the ability to
generate sufficient cash, raise sufficient capital or refinance
corporate debt at or before maturity; the ability to meet the
combination of corporate debt service, research and development and
capital investment requirements; the ability to accurately estimate
demand and match manufacturing production capacity accordingly or
obtain supplies from third-party producers; the access to production
capacity from third-party outsourcing partners; any events that might
affect third-party business partners or NXP's relationship with them;
the ability to secure adequate and timely supply of equipment and
materials from suppliers; the ability to avoid operational problems
and product defects and, if such issues were to arise, to correct
them quickly; the ability to form strategic partnerships and joint
ventures and to successfully cooperate with alliance partners; the
ability to win competitive bid selection processes to develop
products for use in customers' equipment and products; the ability to
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For further press information, please contact: 
NXP Semiconductors 
Global: 
Eureka Endo 
+44 795 828 7483
eureka.endo@nxp.com 
NA: 
Melissa Chanslor
+1 415 593 8465
MelissaC@text100.com 
GC: 
Jannet Chen
+86 21 22055883 
jannet.chen@nxp.com 
APAC: 
Preeti Gupta
+65 6603 9022
preeti.gupta@text100.com.sg 
 
 
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