RFMD Wins DARPA GaN Contract to Enhance High Power RF Amplifier Performance
GREENSBORO, N.C., Oct. 25, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor
technologies, today announced it has been awarded a $2.1 million contract from
the Defense Advanced Research Projects Agency (DARPA) to enhance the thermal
efficiency of gallium nitride (GaN) circuits used in high power radar and
other military systems.
The award is in association with the Near Junction Thermal Transport (NJTT)
effort of DARPA's Thermal Management Technologies (TMT) program. The goal of
the DARPA NJTT initiative is to achieve a 3x or greater improvement in power
handling from GaN power amplifiers through improved thermal management of the
near junction region. By combining thermally-enhanced diamond substrates with
RFMD's industry-leading GaN-on-SiC high power technology, RFMD expects to
significantly improve power density and power handling capability.
Jeff Shealy, vice president and general manager of RFMD's Power Broadband
business unit, said, "RFMD is excited to work with DARPA to apply new
technologies to our existing portfolio of GaN-based high power RF amplifier
products. We expect the NJTT program will result in a new generation of higher
performing, more compact RF high power amplifiers (HPAs) with lower operating
temperature and greater RF power-per-unit area."
RFMD's partners in the program include the Georgia Institute of Technology,
Stanford University, Group4 Labs, and Boeing. Georgia Tech is recognized for
its leadership in thermal testing, modeling and micro Raman thermography.
Stanford University is the world leader in thermal measurement of the critical
interface layers within a transistor die. Group4 Labs is a pioneer in the
development of diamond substrates. Finally, Boeing plans to evaluate the
resulting technology to assess its projected impact on future defense systems.
RFMD has been a leader in GaN technology since 2000 and has production
released two high power process technologies available through its
open-foundry business model. RFMD's GaN power devices have been deployed
across multiple defense and commercial applications, including radar, milcom,
and CATV infrastructure. RFMD is the world leader in GaN-based CATV broadband
amplifiers with superior linearity and output power and has shipped over
350,000 GaN-based CATV amplifiers into the commercial market.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the mobile device,
wireless infrastructure, wireless local area network (WLAN or WiFi), cable
television (CATV)/broadband, Smart Energy/advanced metering infrastructure
(AMI), and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and
ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales
and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
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CONTACT: At RFMD
VP, Investor Relations
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