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RFMD Wins DARPA GaN Contract to Enhance High Power RF Amplifier Performance



RFMD Wins DARPA GaN Contract to Enhance High Power RF Amplifier Performance

GREENSBORO, N.C., Oct. 25, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor
technologies, today announced it has been awarded a $2.1 million contract from
the Defense Advanced Research Projects Agency (DARPA) to enhance the thermal
efficiency of gallium nitride (GaN) circuits used in high power radar and
other military systems.

The award is in association with the Near Junction Thermal Transport (NJTT)
effort of DARPA's Thermal Management Technologies (TMT) program. The goal of
the DARPA NJTT initiative is to achieve a 3x or greater improvement in power
handling from GaN power amplifiers through improved thermal management of the
near junction region. By combining thermally-enhanced diamond substrates with
RFMD's industry-leading GaN-on-SiC high power technology, RFMD expects to
significantly improve power density and power handling capability.

Jeff Shealy, vice president and general manager of RFMD's Power Broadband
business unit, said, "RFMD is excited to work with DARPA to apply new
technologies to our existing portfolio of GaN-based high power RF amplifier
products. We expect the NJTT program will result in a new generation of higher
performing, more compact RF high power amplifiers (HPAs) with lower operating
temperature and greater RF power-per-unit area."

RFMD's partners in the program include the Georgia Institute of Technology,
Stanford University, Group4 Labs, and Boeing. Georgia Tech is recognized for
its leadership in thermal testing, modeling and micro Raman thermography.
Stanford University is the world leader in thermal measurement of the critical
interface layers within a transistor die. Group4 Labs is a pioneer in the
development of diamond substrates. Finally, Boeing plans to evaluate the
resulting technology to assess its projected impact on future defense systems.

RFMD has been a leader in GaN technology since 2000 and has production
released two high power process technologies available through its
open-foundry business model. RFMD's GaN power devices have been deployed
across multiple defense and commercial applications, including radar, milcom,
and CATV infrastructure. RFMD is the world leader in GaN-based CATV broadband
amplifiers with superior linearity and output power and has shipped over
350,000 GaN-based CATV amplifiers into the commercial market.

About RFMD

RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the mobile device,
wireless infrastructure, wireless local area network (WLAN or WiFi), cable
television (CATV)/broadband, Smart Energy/advanced metering infrastructure
(AMI), and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-, and
ISO/TS 16949-certified manufacturer with worldwide engineering, design, sales
and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
www.rfmd.com.

The RF Micro Devices, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6436

This press release includes "forward-looking statements" within the meaning of
the safe harbor provisions of the Private Securities Litigation Reform Act of
1995. These forward-looking statements include, but are not limited to,
statements about our plans, objectives, representations and contentions and
are not historical facts and typically are identified by use of terms such as
"may," "will," "should," "could," "expect," "plan," "anticipate," "believe,"
"estimate," "predict," "potential," "continue" and similar words, although
some forward-looking statements are expressed differently. You should be aware
that the forward-looking statements included herein represent management's
current judgment and expectations, but our actual results, events and
performance could differ materially from those expressed or implied by
forward-looking statements. We do not intend to update any of these
forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the
federal securities laws. RF Micro Devices' business is subject to numerous
risks and uncertainties, including variability in operating results, risks
associated with the impact of global macroeconomic and credit conditions on
our business and the business of our suppliers and customers, our reliance on
a few large customers for a substantial portion of our revenue, the rate of
growth and development of wireless markets, our ability to bring new products
to market, our reliance on inclusion in third party reference designs for a
portion of our revenue, our ability to manage channel partner and customer
relationships, risks associated with the operation of our wafer fabrication,
molecular beam epitaxy, assembly and test and tape and reel facilities, our
ability to complete acquisitions and integrate acquired companies, including
the risk that we may not realize expected synergies from our business
combinations, our ability to attract and retain skilled personnel and develop
leaders, variability in production yields, raw material costs and
availability, our ability to reduce costs and improve margins in response to
declining average selling prices, our ability to adjust production capacity in
a timely fashion in response to changes in demand for our products, dependence
on gallium arsenide (GaAs) for the majority of our products, dependence on
third parties, and substantial reliance on international sales and operations.
These and other risks and uncertainties, which are described in more detail in
RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause
actual results and developments to be materially different from those
expressed or implied by any of these forward-looking statements.

RF MICRO DEVICES®, RFMD® and PowerSmart® are trademarks of RFMD, LLC. All
other trade names, trademarks and registered trademarks are the property of
their respective owners.

CONTACT: At RFMD
         Doug DeLieto
         VP, Investor Relations
         336-678-7088

RF Micro Devices Logo
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